Publication Date:
2019-07-13
Description:
Czochralski and float zone sigle crystals of silicon were doped with the primary impurities B or P so that a resistivity of 0.5 ohm cm resulted, and in addition doped with certain secondary impurities including Al, C, Cr, Cu, Fe, Mg, Mn, Na, Ni, O, Ti, V, and Zr. The actual presence of these impurities was confirmed by analysis of the crystals. Solar cell performance was evaluated and found to be degraded most significantly by Ti, V, and Zr and to some extent by most of the secondary impurities considered. These results are of significance to the low cost silicon program, since any such process would have to yield at least tolerable levels of these impurities.
Keywords:
ENERGY PRODUCTION AND CONVERSION
Type:
Photovoltaic Specialists Conference; Nov 15, 1976 - Nov 18, 1976; Baton Rouge, LA
Format:
text
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