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  • ELECTRONICS AND ELECTRICAL ENGINEERING  (58)
  • 1990-1994  (58)
  • 1980-1984
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  • 1991  (58)
  • 1939
  • 1934
  • 1
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    Update on parts SEE suspectibility from heavy ions (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-24
    Description: JPL and the Aerospace Corporation have collected a fourth set of heavy ion single event effects (SEE) test data. Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are displayed. All data are conveniently divided into two tables: one for MOS devices, and one for a shorter list of recently tested bipolar devices. In addition, a new table of data for latchup tests only (invariably CMOS processes) is given.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); 38; 1529-153
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    A resistive-gate In(0.53)Ga(0.47)As/InP heterostructure CCD (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-24
    Description: The first InGaAs/InP charge-coupled device is demonstrated, exhibiting a charge transfer efficiency (CTE) of 0.98 at 13 MHz and 1 GHz. Cooling the device improves the CTE to greater than 0.99 at 13-MHz clock frequency. The 0.76-eV In(0.53)Ga(0.47)As bandgap makes this structure applicable to direct-detection short-wavelength infrared imagers.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Electron Device Letters (ISSN 0741-3106); 12; 688-690
    Format: text
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  • 3
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    Resonant-tunnelling diode oscillator using a slot-coupled quasioptical open resonator (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: A resonant-tunneling diode has oscillated at X-band frequencies in a microwave circuit consisting of a slot antenna coupled to a semiconfocal open resonator. Coupling between the open resonator and the slot oscillator improves the noise-to-carrier ratio by about 36 dB relative to that of the slot oscillator alone in the 100-200 kHz range. A circuit operating near 10 GHz has been designed as a scale model for millimeter- and submillimeter-wave applications.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Electronics Letters (ISSN 0013-5194); 27; 647-649
    Format: text
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  • 4
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    Lateral tunneling through voltage-controlled barriers (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: The paper reports on a detailed experimental investigation of lateral tunneling between electrodes of a two-dimensional electron gas separated by the voltage-controlled barrier of a nanometer Schottky gate. The experimental data are modeled using the WKB method to calculate the tunneling probability of electrons through a barrier whose shape is determined from a solution of the two-dimensional Poisson equation. This model is in excellent agreement with the experimental data over a two order of magnitude range of current.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Applied Physics Letters (ISSN 0003-6951); 59; 213-215
    Format: text
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  • 5
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    An experimental study of high Tc superconducting microstrip transmission lines at 35 GHz and the effect of film morphology (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Microstrip transmission lines in the form of ring resonators were fabricated from a number of in-situ grown laser ablated films and post-annealed co-sputtered YBa2Cu3O(7-x) films. The properties of these resonators were measured at 35 GHz and the observed performance is examined in light of the critical temperature (Tc) and film thickness, and also the film morphology, which is different for the two deposition techniques. It is found that Tc is a major indicator of the film performance for each growth type, with film thickness becoming important as it decreases towards 1000 A. It is also found that the films with a mixed grain orientation (both a-axis and c-axis oriented grains) have poorer microwave properties as compared with the primarily c-axis oriented material. This is probably due to the significant number of grain boundaries between the different crystallites, which may act as superconducting weak links and contribute to the surface resistance.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Magnetics (ISSN 0018-9464); 27; 2940-294
    Format: text
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  • 6
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    Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz (1991)
    In:  CASI
    Details
    Publication Date: 2013-08-31
    Description: The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFET's) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 microns. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Cincinnati Univ., OH, MMIC Integration Technology Investigation; p 44-69
    Format: application/pdf
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  • 7
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    The NASA Microelectronics Space Radiation Effects Program (MSREP) at the Jet Propulsion Laboratory (1991)
    In:  Other Sources
    Details
    Publication Date: 2013-08-29
    Description: The primary objective of the Microelectronics Space Radiation Effects Program (MSREP) at the Jet Propulsion Laboratory (JPL) is to assist NASA in the selection of radiation hardened microelectronic parts for insertion in NASA space systems through radiation testing and research. Prior to presenting examples of the research and testing on Single Event Effects (SEE) and Total Ionizing Dose (TID) effects, the space radiation environment and radiation requirements for the CRAFT/Cassini program, a typical JPL space project, are discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: ESA, ESA Electronic Components Conference; p 249-254
    Format: text
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  • 8
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    High temperature superconductive microwave technology for space applications (1991)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: Progress being made on space application technology research on film fabrication, passive microwave circuits, and semiconductor devices for cryogenic circuits is reviewed. Achievements in YBCO and TCBCO films are addressed along with circuit evaluations of microstrip resonators, phase shifters, microstrip filters, dielectric resonator filters, and superconducting antennas.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Progress in High-Temperature Superconducting Transistors and other Devices; Oct 04, 1990 - Oct 05, 1990; Santa Clara, CA; United States
    Format: text
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  • 9
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    YBCO superconducting ring resonators at millimeter-wave frequencies (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-12-09
    Description: Microstrip ring resonators operating at 35 GHz were fabricated from laser ablated YBCO films deposited on lanthanum aluminate substrates. They were measured over a range of temperatures and their performances compared to identical resonators made of evaporated gold. Below 60 Kelvin the superconducting strip performed better than the gold, reaching an unloaded Q approximately 1.5 times that of gold at 25 K. A shift in the resonant frequency follows the form predicted by the London equations. The Phenomenological Loss Equivalence Method is applied to the ring resonator and the theoretically calculated Q values are compared to the experimental results.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Transactions on Microwave Theory and Techniques (ISSN 0018-9480); 39; 1480-148
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  • 10
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    High-temperature superconducting superconductor/normal metal/superconducting devices (1991)
    In:  Other Sources
    Details
    Publication Date: 2011-08-24
    Description: We describe the fabrication and characterization of superconductor/normal metal/superconductor (SNS) devices made with the high-temperature superconductor (HTS) YBa2Cu3O(7-x). Structures of YBa2Cu3O(7-x)/Au/Nb on c-axis-oriented YBa2Cu3O(7-x) were made in both sandwich and edge geometries in order to sample the HTS material both along and perpendicular to the conducting a-b planes. These devices display fairly ideal Josephson properties at 4.2 K. In addition, devices consisting of YBa2Cu3O(7-x)/YBa2Cu3O(y)/YBa2Cu3O(7-x), with a 'normal metal' layer of reduced transition temperature YBa2Cu3O(7-x) were fabricated and show a great deal of promise for applications near 77 K. Current-voltage characteristics like those of the Resistively-Shunted Junction model are observed, with strong response to 10 GHz radiation above 60 K.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: In: Superconductivity applications for infrared and microwave devices II; Proceedings of the Meeting, Orlando, FL, Apr. 4, 5, 1991 (A93-27243 09-33); p. 192-196.
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