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Physical analysis of thermal effects on the optimization of GaN Gunn diodes (2009)

Tang, X. ; Rousseau, M. ; Dalle, C. ; [et al.]

American Institute of Physics

In: Applied Physics Letters. 2009; 95(14): 142102. Published 2009 Oct 05. doi: 10.1063/1.3240873.

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Publication Date: 2009-10-05

Print ISSN: 0003-6951

Electronic ISSN: 1077-3118

Topics: Physics

Published by American Institute of Physics

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Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes (2011)

Boucherit, M. ; Soltani, A. ; Monroy, E. ; [et al.]

American Institute of Physics

In: Applied Physics Letters. 2011; 99(18): 182109. Published 2011 Oct 31. doi: 10.1063/1.3659468.

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Publication Date: 2011-10-31

Print ISSN: 0003-6951

Electronic ISSN: 1077-3118

Topics: Physics

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193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors (2008)

Soltani, A. ; Barkad, H. A. ; Mattalah, M. ; [et al.]

American Institute of Physics

In: Applied Physics Letters. 2008; 92(5): 053501. Published 2008 Feb 04. doi: 10.1063/1.2840178.

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Publication Date: 2008-02-04

Print ISSN: 0003-6951

Electronic ISSN: 1077-3118

Topics: Physics

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Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: Photoemission assessments (2008)

BenMoussa, A. ; Hochedez, J. F. ; Dahal, R. ; [et al.]

American Institute of Physics

In: Applied Physics Letters. 2008; 92(2): 022108. Published 2008 Jan 14. doi: 10.1063/1.2834701.

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Publication Date: 2008-01-14

Print ISSN: 0003-6951

Electronic ISSN: 1077-3118

Topics: Physics

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Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors (2012)

Rousseau, M. ; Soltani, A. ; De Jaeger, J. C.

American Institute of Physics

In: Applied Physics Letters. 2012; 101(12): 122101. Published 2012 Sep 17. doi: 10.1063/1.4753815.

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Publication Date: 2012-09-17

Print ISSN: 0003-6951

Electronic ISSN: 1077-3118

Topics: Physics

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