ALBERT

Description: It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 microns of the illuminated surface of the cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with the p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally, a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown, thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3- layer AR coating for thermally diffused p(+)n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p(+) emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as a fairly efficient antireflective layer yielding a measured record high AM0, 25 C, open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3, MgF2 or ZnS, MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductor materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating, should work well for essentially all III-V compound-based solar cells.

Description: Bearings generate disturbances that, when combined with structural gains of a momentum wheel, contribute to induced vibration in the wheel. The frequencies generated by a ball bearing are defined by the bearing's geometry and defects. The amplitudes at these frequencies are dependent upon the actual geometry variations from perfection; therefore, a geometrically perfect bearing will produce no amplitudes at the kinematic frequencies that the design generates. Because perfect geometry can only be approached, emitted vibrations do occur. The most significant vibration is at the spin frequency and can be balanced out in the build process. Other frequencies' amplitudes, however, cannot be balanced out. Momentum wheels are usually the single largest source of vibrations in a spacecraft and can contribute to pointing inaccuracies if emitted vibrations ring the structure or are in the high-gain bandwidth of a sensitive pointing control loop. It is therefore important to be able to provide an a priori knowledge of possible amplitudes that are singular in source or are a result of interacting defects that do not reveal themselves in normal frequency prediction equations. This paper will describe the computer model that provides for the incorporation of bearing geometry errors and then develops an estimation of actual amplitudes and frequencies. Test results were correlated with the model. A momentum wheel was producing an unacceptable 74 Hz amplitude. The model was used to simulate geometry errors and proved successful in identifying a cause that was verified when the parts were inspected.

Description: It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 mu m of the surface of the illuminated cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3-layer AR coating for thermally diffused p+n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p+ emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as an efficient antireflective layer yielding a measured record high AMO open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3 and MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductors materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating should work well for all III-V compound-based solar cells.

Description: Terrestrial far ultraviolet (FUV) airglow emissions have been suggested as a means for remote sensing the structure of the upper atmosphere. The energy which leads to the excitation of FUV airglow emissions is solar irradiance at extreme ultraviolet (EUV) and soft x-ray wavelengths. Solar irradiance at these wavelengths is known to be highly variable; studies of nitric oxide (NO) in the lower thermosphere have suggested a variability of more than an order of magnitude in the solar soft x-ray irradiance. To properly interpret the FUV airflow, the magnitude of the solar energy deposition must be known. Previous analyses have used the electron impact excited Lyman-Birge-Hopfield (LBH) bands of N2 to infer the flux of photoelectrons in the atmosphere and thus to infer the magnitude of the solar irradiance. This dissertation presents the first simultaneous measurements of the FUV airglow, the major atmospheric constituent densities, and the solar EUV and soft x-ray irradiances. The measurements were made on three flights of an identical sounding rocket payload at different levels of solar activity. The linear response in brightness of the LBH bands to variations in solar irradiance is demonstrated. In addition to the N2 LBH bands, atomic oxygen lines at 135.6 and 130.4 nm are also studied. Unlike the LBH bands, these emissions undergo radiative transfer effects in the atmosphere. The OI emission at 135.6 nm is found to be well modeled using a radiative transfer calculation and the known excitation processes. Unfortunately, the assumed processes leading to OI 130.4 nm excitation are found to be insufficient to reproduce the observed variability of this emission. Production of NO in the atmosphere is examined; it is shown that a lower than previously reported variability in the solar soft x-ray irradiance is required to explain the variability of NO.

Description: The Software Engineering Laboratory (SEL) is an organization sponsored by NASA/GSFC and created to investigate the effectiveness of software engineering technologies when applied to the development of applications software. The goals of the SEL are (1) to understand the software development process in the GSFC environment; (2) to measure the effects of various methodologies, tools, and models on this process; and (3) to identify and then to apply successful development practices. The activities, findings, and recommendations of the SEL are recorded in the Software Engineering Laboratory Series, a continuing series of reports that includes this document.

Description: The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

Description: Proposed method of obtaining approximately desired radiation or reception pattern from antenna that includes reflector based on concept of superposition of electromagnetic fields generated by multiple feedhorns or feed antenna elements arrayed at various positions near reflector and excited at electronically adjustable magnitudes and phases. In intended application, reflector nominally paraboloidal, feed elements N feedhorns in hexagonal array, and method used to compensate for deviations of real reflector surface from nominal paraboloidal shape. Method and concept also applicable to electronic beam steering and electronic antenna compensation in other situations.

Description: The current generation of communications satellites are located primarily in geosynchronous Earth orbit (GEO). Over the next decade, however, a new generation of communications satellites will be built and launched, designed to provide a world-wide interconnection of portable telephones. For this mission, the satellites must be positioned in lower polar and near-polar orbits. To provide complete coverage, large numbers of satellites will be required. Because the required number of satellites decreases as the orbital altitude is increased, fewer satellites would be required if the orbit chosen were raised from low to intermediate orbit. However, in intermediate orbits, satellites encounter significant radiation due to trapped electrons and protons. Radiation tolerant solar cells may be necessary to make such satellites feasible. We analyze the amount of radiation encountered in low and intermediate polar orbits at altitudes of interest to next-generation communication satellites, calculate the expected degradation for silicon, GaAs, and InP solar cells, and show that the lifetimes can be significantly increased by use of advanced solar cells.

Description: Report presents numerical-simulation study, based on molecular-level mathematical models, to evaluate effectiveness of eight different configurations of repressor synthesis control of cloned-product-gene expression initiated from promoter/operator genetic sequence. In study, both single- and dual-repressor situations considered, using genetically structured molecules for lac and IPR promotor/operator in example calculations.