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  • Articles  (4)
  • Articles: DFG German National Licenses  (4)
  • 1990-1994  (4)
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  • Articles  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Electronic properties of silicon δ-doped InSb (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 671-675 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated magneto-transport and cyclotron resonance (CR) of two-dimensional electron gas in silicon δ-doped p-InSb under a magnetic field of up to 12 T at 4.2 K. Because there are multiple subbands occupied, Shubnikov–de Haas oscillations show a beating behavior. The CR spectra also display several peaks originating from different subbands. Effective masses of electrons associated with the lowest three subbands can therefore be directly determined, and they are in excellent agreement with a self-consistent calculation, which takes into account the electrostatic Poisson equation, the Schrödinger equation, and realistic sample parameters. Furthermore, we observed an absorption peak, whose resonance position has anomalous angle dependence. It is attributed to impurity CR where donors are in the vicinity of the δ-doped sheet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351850
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  • 2
    Electronic Resource
    Electronic Resource
    Use of atomic layer epitaxy buffer for the growth of InSb on GaAs by molecular beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7166-7172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 300 A(ring) buffer layer of InSb grown by atomic layer epitaxy at a substrate temperature of 300 °C at the GaAs/InSb interface has been employed to grow epitaxial films of InSb having bulk-like properties. The reduction of the defects in the top InSb film has been observed with cross-sectional transmission electron microscopy and channeling Rutherford backscattering spectroscopy. The optimum substrate temperature for the primary InSb layer growth was 420 °C with an atomic flux ratio of Sb to In of 1.4 and a growth rate of 1 μm/h. The best 5-μm-thick InSb layers had x-ray rocking curve widths of 100 s, 77 K n-type carrier concentrations in the low 1015/cm3 range, and 77 K carrier mobilities greater than 105 cm2/V s. Mesa isolated photodiodes had carrier lifetimes of 20 ns, in comparison to 200 ns observed in bulk InSb having a similar carrier concentration. An unexplained, weak free-electron spin resonance transition has been observed in these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347608
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  • 3
    Electronic Resource
    Electronic Resource
    Interfacial roughness in InAs/GaSb superlattices (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3476-3478 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using high-resolution transmission electron microscopy (HRTEM), we have studied InAs/GaSb superlattices grown by molecular beam epitaxy. Our HRTEM observations indicate that the apparent interface width is on the order of 1 monolayer for InSb-like interfaces, and on the order of 2 monolayers for GaAs-like interfaces. The combination of these results with x-ray diffraction and Raman scattering measurements leads us to conclude that these interface widths are principally due to roughness rather than to interfacial diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111245
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  • 4
    Electronic Resource
    Electronic Resource
    Large temperature changes induced by molecular beam epitaxial growth on radiatively heated substrates (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2338-2340 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed optical transmission measurements on radiatively heated GaAs substrates as a function of molecular beam epitaxial growth of InAs, GaSb, AlSb, and GaAs films. The energy gap of the GaAs substrate is observed to decrease strongly in energy when materials with band gaps smaller than GaAs are deposited. This decrease in energy gap is a consequence of a substantial increase in growth temperature induced by the deposition of the film. We have observed increases in temperature of over 150 °C from the temperature measured before film growth. Because the thermocouple is weakly coupled to the radiatively heated substrate, conventional temperature controllers are ineffective at measuring or accounting for this change in temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108236
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