ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The need of an effective control of residual metal content inside the silicon epitaxialwafers is revamping for CCD and CMOS applications, which are very sensitive to small amount ofheavy metals. The paper will discuss the strengths and the challenges associated to the integrateduse of well known electrical techniques when metals like iron and molybdenum are present inconcentration lower than 1E11 cm^3
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.467.pdf