ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
This paper describes a series of electrical measurements and sample modifications thatenabled the electrical properties of hybrid-orientation direct silicon bonded wafer interfaces to bedetermined. It is shown that the carrier transport across this near-surface (110)Si/(100)Si boundaryis dictated by the defects present at the bond interface. These interface states are believed to pin theFermi-level, producing a conduction barrier with a thermal activation energy Ea = 0.56eV. Thedefect band has been identified by deep-level transient spectroscopy and associated with the defectstates typically observed in plastically deformed silicon. The carrier transport behavior across thebonding interface, as well as the observed interface trap levels are therefore attributed to thedislocation network present at the bonding interface. The spatial uniformity of the interfaceproperties have been evaluated by TEM, electron-beam induced current microscopy,photoconductive decay and conduction measurements
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.321.pdf
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