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  • Articles  (3,050,219)
  • Natural Sciences in General  (2,495,950)
  • Electrical Engineering, Measurement and Control Technology  (574,657)
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  • 1
    Electronic Resource
    Electronic Resource
    Ion transfer processes in an insulating layer containing traps (1997)
    Springer
    Semiconductors 31 (1997), S. 36-40 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstrect A theory of ion transfer processes in an insulating layer containing a uniform distribution of traps throughout its volume is formulated. It is shown that free ions localized near the surface are held in a potential well created by repulsion from trapped carriers. Accordingly, the activation energy of the free-ion current is higher than the mobility activation energy and decreases as the voltage is increased, while detrapping takes place with a time delay. The temperature dependence of the depolarization current has two or three peaks, whose positions and profiles change with the voltage. A distinctive feature of the transfer of ions through an insulator containing traps is the “memory” of the electric field driving the carriers toward the surface prior to the start of the transfer process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187048
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular effect in the implantation of light ions in semiconductors (1997)
    Springer
    Semiconductors 31 (1997), S. 999-1002 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The accumulation of structural defects in Si during the implantation of monatomic and diatomic nitrogen ions under equivalent conditions, i.e., at the same energies per atom and flux densities of the atoms, is investigated. The molecular effect in the accumulation of defects is observed only at doses for which the damage level in the crystal lattice exceeds 0.15. Under these conditions each N 2 + ion creates the same number of stable defects as do six N 1 + ions. In our experiments (30 keV for N 1 + and 60 keV for N 2 + at room temperature) the amorphization doses are equal to 3.75×1015 and 1.25×1015 ions/cm2 for N 1 + and N2/+, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187012
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  • 3
    Electronic Resource
    Electronic Resource
    Hole boil-off and the magnetoresitance of the semimagnetic semiconductor Hg1−x MnxTe1−y Sey (1997)
    Springer
    Semiconductors 31 (1997), S. 1030-1036 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Galvanomagnetic effects were investigated in gapless and narrow-gap semiconductors of the form Hg1−x MnxTe1−y Sey with x=0.03–0.11, y=0.01–0.10 (−150〈ɛ g 〈190)meV and acceptor concentration 5.4×1016〈N A 〈4.3×1018 cm−3. In magnetic fields H=5–50 kOe and at T=1.3–4.2 K, the observed hole concentration p=1/eR was found to increase by a substantial factor (of up to 500). This was accompanied by a fall in the longitudinal (ρ zz ) and transverse (ρ xx ) magnetoresistivities. The hole “boil-off” is assumed to be a consequence of the existence at H=0 of a bound magnetic polaron and the delocalization of carriers when these states are destroyed by the external magnetic field. The anomalous ratio of longitudinal-to-transverse resistivities (ρ zz 〉ρ xx ), observed at liquid-helium temperatures and in magnetic fields H〉10 kOe, is explained in terms of the properties of the energy spectrum of the valence band of semimagnetic semiconductors in quantizing magnetic fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187019
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of radiation defects in high-resistivity silicon as a result of cyclic irradiation and annealing (1997)
    Springer
    Semiconductors 31 (1997), S. 189-193 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Transformation of radiation-induced defects in p +-n-n + structures fabricated from highresistivity n-type silicon subjected to cyclic irradiation and annealing is investigated. The kinetic behavior of the increase in the concentration of the Ci-Oi defects is analyzed as a function of the detector fabrication process. During the second irradiation cycle a transformation of the defects, which were formed as a result of annealing of the original radiation defects, is observed. The appearance of “hidden” sources of deep center formation is revealed. It is established that the presence of a higher oxygen concentration, which arises in the samples as a result of the extended silicon oxidation process, results in a more active complex-formation of carbon-containing defects in comparison with samples with reduced oxygen content.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187105
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  • 5
    Electronic Resource
    Electronic Resource
    Photosensitivity of InP/CdS heterostructures in linearly polarized light (1997)
    Springer
    Semiconductors 31 (1997), S. 194-196 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Measurements have been made of the photosensitivity of (p + -p −)-InP/n +-CdS structures formed by the growth of indium phosphide and cadmium sulfide films on p +-InP substrates with (100) crystallographic orientation. These structures exhibit a photosensitivity S i ⋍0.13A/W in the spectral range from 1.3 to 2.4 eV at T=300 K. Polarizational photosensitivity was observed for oblique incidence of linearly polarized light on the CdS surface of these structures. The induced photopleochroism of these structures is governed by the angle of incidence θ. The photopleochroism increases proportionally to θ2 and its maximum value is found to be ∼50% at θ⋍75–80°. The maximum azimuthal photosensitivity was found to be ∼0.13A/W·deg. Structures consisting of CdS deposited on InP can be used as polarimetric photodetectors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187106
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of electron irradiation on the electrical properties of n-type Pb1−x SnxTe (x⋍2) alloys (1997)
    Springer
    Semiconductors 31 (1997), S. 214-217 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The effect of electron bombardment (T in⋍300 K, E=6 MeV, Φ⩽4×1017 cm−2) on the electrical properties of n-type Pb1−x SnxTe has been studied. Electron bombardment decreases the electron concentration and produces conductivity-type n-p conversion. The difference rate of the donor-and acceptor-type defect generation as a result of bombardment has been determined. Anomalies are detected in the temperature and magnetic-field dependences of the electrical parameters of the bombardment samples. These anomalies are associated with the appearance of a hole-enriched surface layer as a result of electron bombardment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187114
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  • 7
    Electronic Resource
    Electronic Resource
    Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates (1997)
    Springer
    Semiconductors 31 (1997), S. 232-236 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract This paper discusses how the processing parameters affect the structural perfection of epitaxial layers of 3C-SiC grown on 6H-SiC substrates by vacuum sublimation. It shows that, at constant temperature and using virtually undisoriented substrates, decreasing the growth rate increases the size of the twinning regions in the films and reduces the total defect concentration of the 3C/6H structures. Epitaxial layers of 3C-SiC with a defect density of 101–102 cm−2 and a twinning area of up to 6 mm2 have been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187112
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  • 8
    Electronic Resource
    Electronic Resource
    Scaling in the regime of the quantum Hall effect and hole localization in p-Ge/Ge1−x Six heterostructures (1997)
    Springer
    Semiconductors 31 (1997), S. 222-227 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract For multilayer Ge/Ge1−x Six (x⋍0.03) heterostructures with two-dimensional p-type conductivity over the Ge layers, the temperature and magnetic dependences of the longitudinal resistivity ρ xx and the Hall resistivity ρ xy have been studied in fields up to 12 T in the temperature interval of T=(0.1–15) K. The observed decrease of the amplitude of the ρ xx peaks with decreasing temperature for T⩽2 K corresponds to a transition to the scaling regime under the conditions of the quantum Hall effect. Scaling diagrams in the (σ xy , σ xx ) coordinates have been constructed for the region of fields and temperatures of interest. It is found that, on the whole, the form of the diagrams corresponds to the theoretical predictions. It is shown that the character of the flux lines on the scaling diagrams is directly connected with such a parameter as the width of a band of delocalized states at the center of the Landau level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187116
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  • 9
    Electronic Resource
    Electronic Resource
    Transport phenomena in n-MnxHg1−x Te/Cd0.96Zn0.04Te epitaxial films (1997)
    Springer
    Semiconductors 31 (1997), S. 218-221 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The results of an experimental study of samples of MnxHg1−x Te films grown by liquid-phase epitaxy on a Cd0.96Zn0.04Te substrate are presented. It shows that, as a result of the diffusion of cadmium from the substrate, a CdxMnyHg1−x−y Te film with a variable band-gap layer is formed close to the 〈epitaxial-film〉-substrate interface. The appearance of this variable band gap is revealed by the transport phenomena. The temperature dependence of the band gap E g (T) is determined in a linear approximation on T from the results of a theoretical analysis of the temperature dependences of the free-carrier concentration and mobility. It is shown that averaging the semiempirical dependences for the ternary compounds with the extreme compositions, using the virtual-crystal approximation, can produce large errors when determining E g (T) in a specific semiconductor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187115
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures (1997)
    Springer
    Semiconductors 31 (1997), S. 1071-1073 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Cyclotron resonance is measured in solitary type-II InAs-AlGaSb quantum wells grown by molecular-beam epitaxy under various growth conditions. Quantum oscillations observed in the cyclotron resonance spectra in InAs-GaSb samples are attributed to scattering by a short-range potential due to roughness of the heterointerface. A new method based on measurement of the cyclotron resonance spectra is proposed for assessing the quality of the heterointerface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187028
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