ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The results of an experimental study of samples of MnxHg1−x Te films grown by liquid-phase epitaxy on a Cd0.96Zn0.04Te substrate are presented. It shows that, as a result of the diffusion of cadmium from the substrate, a CdxMnyHg1−x−y Te film with a variable band-gap layer is formed close to the 〈epitaxial-film〉-substrate interface. The appearance of this variable band gap is revealed by the transport phenomena. The temperature dependence of the band gap E g (T) is determined in a linear approximation on T from the results of a theoretical analysis of the temperature dependences of the free-carrier concentration and mobility. It is shown that averaging the semiempirical dependences for the ternary compounds with the extreme compositions, using the virtual-crystal approximation, can produce large errors when determining E g (T) in a specific semiconductor.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187115
