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  • Articles  (4,610,806)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (1,588,272)
  • Electrical Engineering, Measurement and Control Technology  (574,657)
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  • 1
    Electronic Resource
    Electronic Resource
    Ion sources for dry etching: Aspects of reactive ion beam etching for Si technology (invited) (abstract)a) : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2367-2367 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Aspects of ion beam sources are treated which emerge from their use for reactive ion beam etching (RIBE) in silicon VLSI technology. As a basis for this treatment, the requirements for dry etching for VLSI are elaborated, as well as the consequences of these requirements for ion beam sources to be used for such technology. Practical experience with two types of ion beam sources for this application are highlighted, a classical Kaufman source and a first-generation ECR source. Aspects relevant for microfabrication related to grid optics, and the use of reactive gases, are discussed. Most important in this context are the internal microdivergence of an ion beam and the fragmentation of molecular gases taking place in the source and the ion beam as well. The consequence for potential application of RIBE for micropatterning must be to characterize sources by measuring their energy- and angle-resolved particle fluxes to the wafer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142931
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  • 2
    Electronic Resource
    Electronic Resource
    Negative ion beam technology for materials science (invited) : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2368-2373 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Negative-ion beams can be used in materials science, i.e., ion implantation and ion beam deposition, since various types of high current negative-ion sources have recently been developed. Two types of these the NIABNIS and rf sputter types, were developed by the present authors. There are major differences between negative- and positive-ion implantations with regard to beam transport (collisional cross sections with residual gas particles) and secondary electron emission factors, but little difference in the projected ranges of implanted ions. By using negative ions in ion beam deposition, the effects of the kinetic energy and number of atoms of an ion may be clarified because negative ions have much less reactivity resulting from their internal potential energy of electron affinity than do positive ions resulting from their ionization potential.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142932
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  • 3
    Electronic Resource
    Electronic Resource
    Cluster ion sources (invited) : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2374-2379 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Clusters from gases as well as from metal vapors can be obtained from an expanding nozzle flow with the appropriate set of flow field conditions, characterized by a condensation scaling parameter Γ*. Cluster ion beams are characterized by a low specific charge. Accelerated cluster ion beams allow formation of energetic particle beams in the interesting range of 0.01–10 keV/atom, and the specific characteristics of cluster ion beams have led to new applications in science and technology. In this paper a status report on clusters and cluster ions from nozzle sources is given. As example the construction and results of a source for high-intensity silver cluster beams to be used for thin film formation are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142933
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  • 4
    Electronic Resource
    Electronic Resource
    Ion sources for ion beam assisted deposition of thin films and coatings (invited) (abstract) : Proceeding of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2380-2380 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Ion beam assisted deposition (IBAD) is a coating technique which combines a thin-film deposition method such as evaporation with irradiation by highly energetic ions from an ion source. Application of an ion source and a vapor source which are operated independently of each other render the IBAD technique highly controllable, reproducible, and flexible. Ion flux, atom flux, ion energy, ion impact angle, and other parameters can be controlled independently over a wide range. In order to take advantage of the beneficial features of this technique and obtain optimum process conditions, ion sources with special properties are required. In this paper different ion source types and equipment which has been used for IBAD to date are presented and their special features discussed. Ion sources which should be applicable for IBAD are described. Finally, general requirements of IBAD ion sources are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142934
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  • 5
    Electronic Resource
    Electronic Resource
    High efficiency ion sources for on-line mass separators: A brief review (invited) : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2381-2386 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A review on low-charge state high-efficiency ion sources used at on-line isotope separators (ISOL) is given. These sources for which the efficiency is optimized, can be distinguished from ion sources used at, e.g., accelerators where essentially the output current is optimized. Recent developments conducted to meet the special requirements necessary for on-line ion sources−high efficiency, selectivity, and short delay times−are presented and new ionization schemes like ECR sources or laser resonant photo ionization, implemented during recent years at ISOL systems, are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142935
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  • 6
    Electronic Resource
    Electronic Resource
    The ECR ion source at the TRIUMF isotope separator TISOL : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2387-2389 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The installation at the isotope separator TISOL of a single-staged ECR (electron cyclotron resonance) ion source has been completed. The source can now routinely deliver radioactive species extracted from the production target when bombarded by 500 MeV protons. Among the radioactive species detected so far are isotopes of He, C, N, O, Ne, Cl, Ar, Kr, and Xe in single- and multiple-charge states as well as as molecular species. The yields obtained exceed in many cases those of the isotope separator ISOLDE at CERN. For stable species the source has shown high efficiencies often exceeding 10%. Details of the source construction, the isotope separator TISOL, and the variation of source parameters under operational conditions will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142936
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  • 7
    Electronic Resource
    Electronic Resource
    Surface modification by ion bombardment : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2390-2392 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In recent years the production of thin high-quality films has become more and more important. At the University of Giessen, radiofrequency ion sources for material treatment (RIM) had been designed and optimized. The presented results show some of our analyses of RIM-produced thin films and RIM-modified surfaces. By means of an oscillating quartz crystal, the distribution of sputtered atoms and the properties of the growing thin film were measured. Furthermore, the formation of seed textures on the sputtered surfaces were analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142937
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  • 8
    Electronic Resource
    Electronic Resource
    Ion beam assisted deposition with a duoplasmatron (abstract)a) : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2393-2393 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: One of the recent applications of ion sources is their use for ion beam assisted deposition of thin films and coatings. This method combines a coating technique such as evaporation or sputtering with bombardment with ions in the keV energy range. The required ions with defined energy, flux, and impact angle are delivered from an ion source. An apparatus for ion beam assisted evaporation with a duoplasmatron ion source is described. The features of the duoplasmatron with respect to application for ion beam assisted deposition such as beam shape, uniformity and intensity, ion-to-neutral ratio, and focused and defocused mode are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142938
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  • 9
    Electronic Resource
    Electronic Resource
    Ion beam diagnostics by Doppler shifted light emissions (abstract)a) : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2393-2393 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Broad low-energy ion beams in the energy range of 0.2 to 1.5 keV originating from a filament source with argon as feed gas have been analyzed by high-resolution emission spectroscopy. The Doppler structure of Ar+ emissions reveals the existence of different velocity classes. Besides slow ions and ions possessing the main beam energy, electronically excited Ar+ ions with twice the main beam energy are detected which are attributed to a single-electron capture process in Ar++/Ar collisions. As a preliminary result from a reactive beam extracted from a microwave CF4 source, plasma fast F atoms are detected which are attributed to charge exchange and dissociative collisions in the process chamber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142939
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  • 10
    Electronic Resource
    Electronic Resource
    Investigation of a 2.45 GHz ECR plasma for ion etching : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2394-2396 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Reactive ion-stream etching of SiO2 by CF4 ECR plasma has been investigated using different magnetic configurations. Whereas a permanent multipole field yielded the best results concerning the homogeneity over a large area, the highest etching rates were achieved with a longitudinally gradient field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142940
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