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  • Articles  (154,266)
  • Articles: DFG German National Licenses  (154,266)
  • American Institute of Physics (AIP)  (154,266)
  • 201
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5972-5980 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental data on the 248 and 308 nm wavelength excimer laser ablation at poly(tetrafluoroethylene) doped with polymide (PI) are reported for a range of fluences and dopant concentrations. Threshold fluences were determined and a correlation was obtained between the dopant concentration and the threshold fluence. The threshold fluences and the limiting etch rates at high fluences decreased with increasing dopant concentration, and there is a minimum dopant concentration below which there is no ablation at both of the wavelengths. The side wall taper of the ablated holes increased with increasing dopant concentration. At subthreshold fluences, the polymer surface was modified with selective removal of PI from the polymer blend. The etch rates have been modeled using a two parameter thermal model to describe the etching process. The parameters obtained by fitting the data are qualitatively correlated to the dopant concentration and the measured limiting etch rates.
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  • 202
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2951-2953 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical treatment is given to the problem of a Coulomb center in thin wire with the dielectric constant æ(very-much-greater-than)1. The model describes adequately impurity centers and excitions in porous Si. The shape of Coulomb potential φ(r) inside the wire disturbed drastically by image forces is analyzed. The exciton (or impurity) binding energy determined by the Schrödinger equation with φ(r) demonstrates a manifold increase with the decrease of the wire radius.
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  • 203
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2962-2964 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalous optogalvanic line shapes were observed in a commercial hollow cathode lamp containing argon buffer gas. Deviations from Gaussian line shapes were particularly strong for transitions originating from the 3P2 metastable level of argon. The anomalous line shapes can be described reasonably well by the assumption that two regions in the discharge are excited simultaneously, each giving rise to a purely Gaussian line shape, but with different polarities, amplitudes, and linewidths.
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  • 204
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2959-2961 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nd:YAG-laser-induced evaporation of particulates formed in an Ar-CCl2F2 rf plasma and the subsequent discharge in the vapor have been investigated in situ by means of optical emission spectroscopy. The estimated threshold for discharge formation is 5×106 W/cm2. The maximum laser-induced emission intensity is observed when the laser is operated in the long-pulse mode (about 200 μs pulse duration) at the fundamental frequency. The wavelength integrated intensity of this continuum emission has been compared with light scattering intensity at the same laser energy. It has been found that the laser-induced emission intensity can be more than ten times higher than the scattering intensity, especially for particulates with a diameter much smaller than the wavelength of the laser. Therefore, this effect provides a sensitive particulate detection method.
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  • 205
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2974-2976 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructural evaluation of thick (In,Mn)As epitaxial films grown by molecular-beam epitaxy on InAs/GaAs(100) substrates is carried out by transmission electron microscopy (TEM). Films grown at the substrate temperature of Ts=300 °C show the inclusion of MnAs crystallites in the zinc-blende host matrix, in which two types of crystallite morphologies, rod and approximately round shapes, are identified. In contrast, the MnAs crystallites are not observed in films grown at Ts=200 °C, and TEM studies confirm that the films are primarily of zinc-blende structure. Microstructural defects in the films are also discussed to assess the quality of epitaxy.
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  • 206
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2980-2982 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The elastic strain limit of polycrystalline mixed AgClxBr1−x fibers was studied. These fibers are useful as flexible infrared optical fibers, and the elastic bending regime is preferred for applications which require many bending cycles. The experimental method was based on the spring-back upon releasing a stressed material, and used specifically calculated expressions. Elastic strain limit values are in the range of 0.15%–0.4%. They depend on composition going through a maximum at around the AgCl0.5Br0.5 composition. The dependence on composition is explained by a theoretical model, which is based on a solid-solution internal stress field, and uses material constants.
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  • 207
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2989-2991 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The retracing behavior of the phase-matching angle (RBPA) of many nonlinear optical crystals in optical parametric oscillators (OPO) is reported here. The wavelength range of the pump wave and the tuning angle range over which RBPA can occur are obtained. Furthermore, the generality of this novel and interesting phenomenon is successfully explained by theoretical analysis. We point out that RBPA exists generally in both type I and type II OPO's by using either uniaxial or biaxial crystals.
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  • 208
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2992-2992 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
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  • 209
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1484-1491 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is described by which the optical properties of asymmetric Einzel lenses may be measured. This method uses the technique of grid shadows. For the measurement of cardinal elements as well as spherical aberration coefficients, two independent measurements are required. For chromatic aberration coefficients, measurements are required as a function of lens voltage ratio. No extra lens is required for the measurements. An experiment is described in which the optical properties of an asymmetric lens are measured. Within the errors of the measurement, the technique is demonstrated to produce good agreement with theoretical calculations.
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  • 210
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1501-1509 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A unique property of the free-electron laser (FEL) is its capability to be tuned continuously over a wide spectral range. This is a major difference with all other high-power lasers. However, the tunability of first-generation FELs used to be quite poor (typically 10% or less), due to constraints imposed by the accelerator and the undulator. The free electron laser for infrared experiments (FELIX) uses an undulator with an adjustable gap, which permits wavelength scans over an octave in typically 2 min without the need for any readjustment of the electron beam. Results obtained in operation of the long-wavelength FEL of the FELIX facility are presented. These involve measurements of the spectral range covered (16–110 μm), the output power, and the influence of the cavity desynchronism. The results are compared with numerical simulations.
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  • 211
    ISSN: 1089-7550
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    Topics: Physics
    Notes: The viscoelastic response of the nematic director field to low-frequency modulations of the driving voltage was studied by means of optical transmission measurements. An external ac voltage above the critical field Uc was weakly amplitude modulated with frequencies in the range of 1 to 100 Hz. The viscosity coefficients α1, γ1, γ2, and ηb influence the time dependence of the director field. They were determined by fitting the phase and amplitude of theoretically calculated optical transmission curves to measured data.
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  • 212
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6062-6071 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxial growth of PbTe/EuTe superlattices on (111) BaF2 was studied using reflection high energy electron diffraction (RHEED). The surface reconstructions of EuTe, its nucleation and critical layer thickness on (111) PbTe were investigated by in situ RHEED. From these studies, the optimum conditions for the growth of PbTe/EuTe superlattices were derived. PbTe/EuTe superlattice (SL) samples were investigated by high resolution x-ray diffraction. Triple axis x-ray diffractometry was employed to characterize the structural parameters of a PbTe/EuTe SL sample (87.6 PbTe monolayers/5 monolayers EuTe) deposited on a 4 μm thick PbTe buffer layer. Reciprocal space maps around the (222) and (264) Bragg reflections are used to analyze the strain status of the SL layers with very high precision. Using reciprocal space mapping, the small strain gradient present within the SL along growth direction can be determined quantitatively. The full width at half-maximum (FWHM) values of (222) SL x-ray diffraction peaks along and perpendicular to the [111] growth direction were measured. It was found that along the [111] direction the FWHM's increase with satellite number, which is most probably caused by either lateral superlattice thickness variations of 0.4% for the x-ray spot size of 1×8 mm2 or a thickness variation in growth direction of 1.5%. The broadening of the main superlattice peak perpendicular to the [111] growth direction indicates the presence of mosaicity in the superlattice layers, which obscures due to its magnitude the measurement of lateral interface roughness.
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  • 213
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7488-7491 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic and magneto-optical properties of Fe-Si/Pd multilayers prepared by rf sputtering were studied. For Fe-Si/Pd multilayers with a fixed Fe-Si layer thickness dm of 15 A(ring) and the Pd layer thickness dp increasing from 10.8 to 18 A(ring), the saturation magnetization Ms and the Kerr rotation θk decrease sharply and reach a minimum. With dp further increasing, the multilayers increase. Ms is almost constant and θk decreases slightly when dp(approximately-greater-than)36 A(ring). For Fe-Si/Pd (54 A(ring)) multilayers the room temperature Ms decreases and θk increases, respectively, with increasing dm. This is caused by the spin-polarization effect of Pd atoms near the interfaces.
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  • 214
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7506-7509 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microscopic model for low energy electron interaction in alkali halides was used to simulate secondary electron emission from CsI induced by x rays with energies up to 100 keV. The integral "current'' and "pulse'' yields were calculated as function of the x-ray energy, CsI convertor thickness, and angle of incidence. We observe a decrease in true low energy (〈50 eV) secondary electron yields at increasing x-ray energies and discuss the effectiveness of CsI convertors coupled to gaseous electron multipliers developed for fast, high resolution x-ray imaging.
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  • 215
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7510-7516 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One-dimensional-imaging laser-induced fluorescence spectroscopy (1D-LIF) has been applied to investigate the dynamics of the nonemissive neutral particles (YO molecules) during the ArF excimer laser ablation of YBa2Cu3O7−δ in an ambient oxygen gas. Investigating the 1D-LIF observation, the propagation of particles through the ambient gas at appropriately high pressures is categorized into two phases, the propagation phase and the diffusion phase. In the propagation phase, the point source blast wave model (shock model) describes well the dynamics at high background gas pressures. Particles propagate according to the shock model over a finite distance from the pellet surface after the ablation, and almost stop there. The propagation distance depends on the ambient gas pressure and the ablation fluence. After the propagation ceases, the particles start to diffuse through the background gas; that is the diffusion phase. Rotational temperature variations of YO molecules in the different phases are also measured. Rotational temperatures as high as 1000 K are observed even in the diffusion phase.
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  • 216
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7521-7530 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reaction products contained in the exhaust gas of a dc plasma jet reactor system were detected using mass spectrometry. The major reaction products formed from a feed gas mixture of 96% H2, 3% CH4, and 1% O2 injected into an argon plasma jet were CH4, C2H2, C2H6, CO, and H2O. The products formed without O2 in the reactor feed were CH4, C2H2, and C2H6. Addition of O2 to the reactor gas feed increased the diamond deposition rate by ∼30% with no degradation in quality. A chemical kinetics model for flames was adapted to this reactor and accurately predicted the major reaction products formed for a reactor feed without O2, indicating the gas phase chemistry may be described by a reaction set developed for hydrocarbon combustion and the chemistry is thermally driven. When compared to experimental results, the model predicts: (1) a maximum temperature in the gas of 3000 K, (2) only 1.2% of the H2 in the reactor feed is dissociated, and (3) CH3 is the primary diamond growth precursor.
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  • 217
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7551-7560 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bismuth titanate thin films were deposited by the excimer laser ablation technique directly onto bare silicon substrates, SiO2 and Si3N4 coated silicon. The impact of process parameters such as gas pressure, laser fluence, processing temperature, and the presence of an oxygen plasma were studied with regards to the ferroelectric-semiconductor interface. The density of interfacial surface state (Nss) at the flatband voltage was found to be on the order of 1012–1014 eV−1 cm−2. Hysteretic capacitance-voltage data indicated charge injection from the substrate was the dominant mechanism, masking any polarization mode. Films deposited on SiO2 coated silicon did, however, exhibit polarization type switching.
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  • 218
    ISSN: 1089-7550
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    Topics: Physics
    Notes: A neutron-diffraction study of Nd2Fe14−xSixB has shown that silicon preferentially occupies the 4c site in the transition-metal sublattice in Nd2Fe14B. Silicon also exhibits a moderate preference for the 8j1 site, is almost excluded from the 16k2 site, and avoids the 16k1, 8j2, and 4e sites. The silicon site occupancy is correlated with a preference for a silicon atom to have rare-earth atoms in its coordination environment. The Mössbauer spectra of Nd2Fe14−xSixB have been fit with a model which takes into account the distribution of near-neighbor environments of an iron atom due to the presence of silicon. These fits show that the substitution of silicon in the near-neighbor environment of an iron atom primarily influences the long-range contributions to the hyperfine field experienced by the iron. The mechanism for the increase in the Curie temperature when silicon is added to Nd2Fe14B-type magnets is more subtle than previously believed, but can be explained by the relative decrease in the proportion of short iron-iron bonds when silicon is substituted for iron.
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  • 219
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6840-6846 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Kerr spectra and magnetic properties for multilayers of ultrathin Co and Cu/Au composite layers were systematically investigated. A Kerr enhancement was observed for the multilayers. The peak position of Kerr rotation shifts from the Cu plasma edge (560 nm) to the Au plasma edge (480 nm) by varying the constitution of Au/Cu/Au and Cu/Au/Cu parts. Magnetic anisotropies for the multilayers strongly depend on the constitution of Cu/Au composite layers. For [Cu(tA(ring))/Au(25−2tA(ring))/Cu(tA(ring))/Co(8 A(ring))]15 multilayers, the easy axis changes from perpendicular to parallel along the film plane at a Cu layer thickness of around 2.5 A(ring). The anisotropy for the [Au(tA(ring))/Cu(25−2tA(ring))/Au(tA(ring))/Co(8 A(ring))]15 multilayer remains unchanged below a Au layer thickness of 3 A(ring) and increases above that thickness. The change of easy axis is mainly due to the change of interface anisotropy.
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  • 220
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    Journal of Applied Physics 74 (1993), S. 6847-6850 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon was introduced by arc melting to RTiFe11, where R=Sm, Gd, Th, Dy, Ho, Er, and Y, and its effects on the crystallographic and magnetic properties of these compounds have been investigated by x-ray and magnetic measurements. The experimental results show that the carbon atoms occupy 8i sites in ThMn12 structure. It is found that the substitution does not have an effect on the Curie temperature, but instead increases both saturation magnetization and magnetocrystalline anisotropy. The intrinsic magnetic properties of SmTiFe11 are improved with the addition of the carbon atoms, indicating that SmTiFe11−xCx is a better candidate for permanent magnetic applications than SmTiFe11.
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  • 221
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    Journal of Applied Physics 74 (1993), S. 6859-6865 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The space dependence of charge carriers trapped in α-quartz under electron-beam bombardment is investigated using a Monte Carlo algorithm. The average energy of the electron after being detrapped from a trap site is first calculated by considering both the polar and nonpolar phonon scatterings. Later, the detrapping and trapping rates are also included in the model to obtain a stable trapped charge distribution, which is found to be dependent on the size as well as the temperature of the sample. Comparisons with experimental results of the size effect on the dielectric strength obtained from a scanning electron microscope are also made.
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  • 222
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    Journal of Applied Physics 74 (1993), S. 6866-6871 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature (∼5 K) photoluminescence spectroscopy was performed on undoped CdTe epilayers grown by molecular beam epitaxy on (211)B oriented bulk GaAs substrates at substrate temperatures ranging from 230 to 275 °C. The emission spectra from all samples studied contained evidence of the diffusion of gallium and arsenic atoms from the substrate. A broad, low amplitude emission band observed at 1.594 eV was related to the GaCd donor level in CdTe. Donor-acceptor pair recombination observed at 1.51 eV was due to the substitutional GaCd donor and AsTe acceptor. The level of compensation in the CdTe layers was determined from the energy shift of the donor-acceptor emission peak with excitation power, with the lowest degree of compensation observed in a sample grown at 230 °C. In addition, a bright emission peak was observed at 1.47 eV. This peak, which had been observed previously in homoepitaxial and heteroepitaxial growth of CdTe, was related to electron-hole recombination of a structural defect in the CdTe/GaAs epilayers with an electronic binding energy of ∼130 meV.
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  • 223
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    Journal of Applied Physics 74 (1993), S. 6883-6887 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering has been used to investigate the optical phonons in thick compositionally uniform epilayers of In1−xAlxSb (x〈0.65) grown by magnetron sputter epitaxy on (001)InSb. An analysis of the stress-induced changes in the frequencies of the two optical phonon modes found in the epilayers was performed, and the stress factors and phonon mode behaviors for bulk material were evaluated. It was found that some epilayers with low x values were coherently strained, even though their thicknesses far exceeded the mechanical-equilibrium critical thickness limit.
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  • 224
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    Journal of Applied Physics 74 (1993), S. 6895-6906 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scaling relations are developed to allow estimation of the atomic hydrogen concentration at the substrate during diamond chemical-vapor deposition for both diffusion-dominated and convection-dominated reactors. In the convection-dominated case, it is shown that there exists an optimal Mach number which maximizes the H concentration delivered to the substrate. In addition, when homogeneous recombination is taken into account, there exists an optimal operating pressure. This analysis shows that a sonic flow of highly dissociated hydrogen at a pressure near atmospheric is optimal for rapid growth of high-quality diamond.
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  • 225
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    Journal of Applied Physics 74 (1993), S. 6912-6918 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The material properties of 2-μm-thick InxGa1−xAs epilayers grown on GaAs with 0.28≤x≤1 were investigated. It was found that for x≥0.5, the material quality of the larger lattice-mismatched heterojunction recovers, as evidenced by cross-sectional transmission electron microscopy (XTEM) and double-crystal x-ray diffraction (DXRD). Magnetophotoconductivity measurements were performed on InxGa1−xAs epilayers with 0.75≤x≤1. The dependence of both the cyclotron resonance linewidth and the carrier relaxation time on the material quality is consistent with the XTEM and DXRD results. The transport properties of InxGa1−xAs epilayers with 0.75≤x≤1 were studied using temperature-dependent van der Pauw measurements. It was found that the electron mobility in the low-temperature range is determined by a combination of ionized impurity and dislocation scatterings. The contribution of dislocation scattering to ternary InGaAs epilayers is larger than that to InAs, although InAs has a larger lattice mismatch with respect to GaAs. These four different measurement techniques confirm that the growth mode rather than lattice mismatch determines the density of dislocation for the heteroepitaxy of highly mismatched InxGa1−xAs on GaAs.
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  • 226
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    Topics: Physics
    Notes: Boron carbide thin films of several B/C ratios have been deposited on Si(111) using plasma-enhanced chemical vapor deposition from nido-pentaborane(9) (B5H9) and methane (CH4). X-ray diffraction studies of boron carbide thin films on Si(111) exhibited characteristic microcrystalline diffraction lines. Soft x-ray emission spectroscopy was used to verify that the local electronic structure and composition of each sample corresponded to a homogeneous solid solution boron carbide phase.
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  • 227
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    Journal of Applied Physics 74 (1993), S. 6941-6947 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents a numerical simulation of the gas-phase chemistry in diamond deposition processes. The simulation shows that the concentration of the two potential growth species CH3 and C in the boundary layer near the diamond film substrate are sensitive to these species' concentration in the bulk gas. The concentrations in the bulk gas depend, in turn, on the physical arrangement of the reactor, and in particular on the time provided for the gas mixture to reach chemical equilibrium. With sufficient equilibration time, simulations of both a hot-filament reactor and a plasma torch reactors show that the concentration of atomic carbon at the substrate surface can be much higher than the concentration of CH3.
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  • 228
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    Journal of Applied Physics 74 (1993), S. 6948-6952 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time-of-flight (TOF) measurements for ions in the expanding plume during laser ablation of Y1Ba2Cu3Ox are performed. The TOF spectra consist of peaks of only the monatomic ions. The drift velocities for these ions are revealed to be (2–4)×106 cm/s at the laser fluence of 2.0 J/cm2 and an oxygen pressure of 10−3 Torr. These velocities are affected by the ablation conditions, and are found to increase with increasing laser fluence and decrease with increase of oxygen pressure. The velocity distributions for the ions at high oxygen pressure are described by the supersonic expansion model with a distribution width narrowing with decreasing oxygen pressure.
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  • 229
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    Journal of Applied Physics 74 (1993), S. 1890-1893 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface potential of GaAs is strongly modified in the presence of a high-energy electron beam due to the creation of electron-hole pairs in the depletion region and the subsequent drift of the holes to the surface where they neutralize surface states. This effect is modeled in terms of a parameter K=A*T2/Ib(dE/dz)η, where Ib is the beam current density, A* is the effective Richardson constant, dE/dz is the beam energy loss per unit length, and η−1 is the average energy required to create an electron-hole pair. For the sample studied here, an 0.25-μm layer with n(approximately-equal-to)3×1017 cm−3, we obtain a value K(approximately-equal-to)(7.5±0.8)×104 cm at T=296 K and Ib=0.33 μA/cm2, which gives A*(approximately-equal-to)0.44 A/cm2 K2. Although this value of A* is much lower than the theoretical estimate of 8 A/cm2 K2, it is in good agreement with other recent results.
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  • 230
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    Topics: Physics
    Notes: Biaxially aligned YBa2Cu3O7−x (YBCO) thin films were produced on polycrystalline Ni-based alloy, by using biaxial yttria-stabilized-zirconia (YSZ) intermediate layers formed by off-normal ion-beam-assisted deposition. Most explicit in-plane alignment was obtained when the YSZ layer formed with the beam-incident angle of 55° from substrate normal. Jc-B characteristics and angular dependence of Jc on the magnetic field were measured. 5.0×105 and 5.5×104 A/cm2 were obtained at 77 K with 0 and 8 T, respectively. The distribution of misorientation angles of in-plane a and b axes between YBCO grains was evaluated by both x-ray pole figure measurement and planar observations of transmission electron microscopy. 50% of the grains had the misorientation angles restricted within ±5°. From the image of dislocations, the elastic strains at grain boundaries were estimated to be relaxed with lower misorientation angle. The high-Jc properties are understood to be obtained by the current paths through low-angle grain boundaries.
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  • 231
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    Notes: Recent results concerning synthetic, structural, and magnetic work on 3,4,9,10-perylenetetracarboxylic acid complexes of copper (II) are discussed. To date, the Cu(II)/PTCA/dien system has yielded two compositionally different crystalline products. Compound 1, [Cu3(dien)3(PTCA)(H2O)3](ClO4)22H2O represents the extremely rare case of three different molecular complexes of Cu(II), bound to the same ligands but with different stoichiometries, in the same compound. The magnetic lattice is comprised of three molecular substructures: complex 1a is a monomeric cation, [Cu(dien)(H2O)2]2+; complex 1b is a charge-neutral dimer, [Cu2(dien)2-(PTCA)(H2O)2]; and complex 1c a charge-neutral, infinite ladder-like chain structure, ∞1[Cu2(dien)2(PTCA)]n. Single crystal x-ray analysis of compound 2, [Cu2(dien)2(PTCA)(H2O)2]12H2O, reveals its structure simply consists of isolated, neutral dimers similar in structure to complex 1b. Magnetic susceptibility data in the temperature range 1.7–300 K shows the dimeric unit in 2 to be a weakly exchange-coupled antiferromagnetic dimer (−0.6 cm−1) and suggests that exchange interactions are indeed propagated through the PTCA anion over a Cu.....Cu separation of 15.7 A(ring). This result, in addition to the expected Curie paramagnetism of monomer 1a, affords the ladder-like chain 1c to be characterized as a chain of antiferromagnetically exchange-coupled ferromagnetic dimers (+12 cm−1). Long range ordering is not observed down to 1.7 K. Compound 1 is the first example of a molecular-based magnetic material that contains three different homonuclear magnetic molecules; a monomer, a dimer, and a ladder-like chain.
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  • 232
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    Journal of Applied Physics 74 (1993), S. 1944-1948 
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    Topics: Physics
    Notes: A scanning electron microscope is employed for the investigation of charging on different cuts of an α-SiO2. A method for the determination of trapped charges is proposed. Charging on different cuts is observed to decrease in the order of z cut, 30° cut, 45° cut, and 60° cut of the α-SiO2. This phenomenon is related to permittivity, defect density, and stress of the samples. Details of the experiments and the method of charge determination are given.
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  • 233
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1960-1967 
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    Topics: Physics
    Notes: Using the scanning electron microscope we have investigated the physical parameters determining the size effect of various dielectric samples submitted to a surface electric field. It is shown that the size effect is a function of the static permittivity and of the space charge distribution. The results are explained by the consideration of charge diffusion and polarization relaxation processes resulting from the space charge formation. A one-dimensional mathematical model has also been used to describe space charge distribution. The findings were consistent with the experimental observations.
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  • 234
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1987-1991 
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    Topics: Physics
    Notes: Photocurrent and photoluminescence experiments performed on periodical δ-doped GaAs reveal a signature of quantum-confined interband transitions. We present in this structure the observation of the transition energy at low temperature in the photocurrent spectrum.
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  • 235
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1410-1416 
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    Topics: Physics
    Notes: Floating-body effects such as hysteresis, a single-transistor latch, and steep subthreshold slopes in n-channel silicon-on-insulator metal-oxide-semiconductor transistors are investigated. It is shown that the existence of multistable floating-body potentials is responsible for hysteresis and a single-transistor latch. Hysteresis denotes the presence of three floating-body potentials, while a single-transistor latch could reveal as many as five. Furthermore, a sharp rise (fall) in floating-body potentials, which triggers an abrupt device transition from subthreshold (saturation) to saturation (subthreshold), produces the steep subthreshold ID-VG characteristics observed at high drain biases.
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  • 236
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    Journal of Applied Physics 74 (1993), S. 1403-1409 
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    Topics: Physics
    Notes: Large-current steps have been found in the I/V characteristics of superconducting tunnel elements that are integrated within fixed tuning structures. The Josephson frequency at the steps corresponds to the operation frequencies of the different tuning structures at 345, 460, or 600 GHz. Therefore, these current steps are interpreted as resonance effects generated by an internal interaction of the Josephson oscillation with the tuning structure. The result of a spectrometer measurement around 350 GHz is in very good agreement with the resonance frequency obtained from the I/V characteristic. This confirms the interpretation of the current steps. A simple dc measurement is therefore sufficient to determine the actual resonance frequency of the tuning structure. It may be shifted with respect to the expected frequency, due to deviations of the junction size or other parameters from their required values. The exact knowledge of the resonance frequency is important for the application of these integrated tunnel elements as mixers in radioastronomical receivers. In single junctions a splitting of the resonance step into several branches was observed, whereas in two-junction arrays a splitting into two distinct states was found. Irregular switching appeared between these two states. The temperature and magnetic-field dependence of the current steps was investigated.
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  • 237
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1417-1420 
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    Topics: Physics
    Notes: We present an analysis of the optical gain for stimulated emission between subbands in quasione-dimensional structures. The population inversion is induced by a new pumping mechanism involving phonon absorption during transport in quantum wires. The population inversion threshold for far infrared stimulated emission is calculated in a generic GaAs quantum wires laser structure and shows a quite reasonable minimum value of Δn=3×105/cm at λ=100 μm. For longer wavelengths, free carrier absorption is the main limitation to stimulated emission.
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  • 238
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    Journal of Applied Physics 74 (1993), S. 1434-1436 
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    Topics: Physics
    Notes: Our investigations on the photoluminescence from InGaAs/AlGaAs half-wave periodic quantum wells show an enhanced directivity, and suppression of transverse amplified spontaneous emission. These properties are explained by a model that treats the quantum wells as periodic arrays of radiating dipoles, like "directional antennas'' for the micro- and radio frequency regimes. Such quantum optic structures have potential for efficient optical amplifiers and external cavity broad area semiconductor lasers.
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  • 239
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1431-1433 
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    Topics: Physics
    Notes: Deep-level transient spectroscopy has been used to characterize n-type In0.48Ga0.52P grown by gas-source molecular beam epitaxy. Only one electron trap was detected in both unintentionally doped and Si-doped material, with the thermal emission energy barrier varying somewhat with measurement conditions. For a bias pulse duration of 10 ms, the emission barrier energy was 0.24±0.03 eV and the capture barrier energy was 0.06±0.02 eV. The trap concentration was less than 3×1014 cm−3 and was found to be independent of Si doping for concentrations up to 4×1018 cm−3 and to oxygen contamination in the range (0.5–1.5)×1018 cm−3.
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  • 240
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    Notes: Epitaxial Tl2Ba2CaCu2O8 films of thickness 0.65±0.05 μm and Tc of 105±1 K were prepared on (100) LaAlO3 through a two-step post-deposition thallination process and patterned by standard photolithographic techniques and ion beam milling. Using the voltage per unit length criteria Ec=1.0 μV/cm, transport critical current density Jc in zero applied field for a 1.8-m-long, 12±1-μm-wide meander line separated by 8±1 μm spaces was measured to be 1.04×107 A/cm2 at 20 K, 1.82×106 A/cm2 at 80 K, and 1.02×105 A/cm2 at 100 K. The uniformity in Jc was measured for eight line segments of about 11.7 cm length, yielding variations in Jc of 1.44–3.02×106 A/cm2 at 80 K. Jc values independent of linewidth were also measured for three 0.7-cm-long lines with widths of 7, 27, and 52 μm. For design of electronic circuits, resistivity may be a more useful design parameter than Jc, and detailed measurements of resistivity ρ as a function of current density J were carried out. At low temperatures (T/Tc〈0.2), ρ increased by about two orders of magnitude for a 10% increase in J, and Jc is well defined. At high temperatures (T/Tc(approximately-greater-than)0.7), ρ is less strongly dependent on J near Jc. At 90 K, where Jc=7.6×105 A/cm2, ρ remained less than 10−10 Ω cm (3000× less than oxygen free high conductivity copper at 90 K) even for J=1.4×106 A/cm2. The results suggest the potential for the use of patterned Tl2Ba2CaCu2O8 films in high Jc electronic applications such as chip-to-chip interconnects operating at temperatures below 90 K.
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  • 241
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    Journal of Applied Physics 74 (1993), S. 6007-6011 
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    Notes: Using the bipartition model of ion transport in a solid, we have calculated the energy reflection coefficients R(E) or equivalently the energy deposition coefficients F(E) for the ion-target combinations of He-Si, He-Cu, He-Ag, He-Au, Ar-Ag, Ar-Au, and Xe-Au. To test the validity of the theoretical method, we compared our results with corresponding experimental data and Monte Carlo data. The comparison shows that the results of the bipartition model reach a reasonable agreement with experimental data and Monte Carlo data.
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  • 242
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    Journal of Applied Physics 74 (1993), S. 1440-1441 
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    Topics: Physics
    Notes: We studied the thermal stability of Fe originally gettered by oxygen precipitates. After low-temperature annealing for gettering, we annealed at higher temperatures. We found that the Fe concentration increases faster in gettered wafers than as-grown wafers. This shows that Fe was re-emitted from the bulk defect region faster than surface Fe precipitates decomposed. The Fe concentration increases with annealing time to the solid solubility level at the temperature used. These results suggest that gettering and the re-emission of Fe are two parts of a reversible reaction.
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  • 243
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    Journal of Applied Physics 74 (1993), S. 1442-1444 
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    Topics: Physics
    Notes: In situ microscopy and optical diffraction studies of ripple structures produced on excimer laser ablated polymers are reported, allowing their development rate to be estimated and motion to be observed. The formation of these "anomalous'' ripple structures (grating vector perpendicular to the polarized laser electric field direction) is analyzed within the framework of a model describing interference between the transmitted and diffracted beams at the surface. Experimental observations are consistent with theory if substantial modification of the (effective) optical constants of the polymer occurs under ablation conditions. A model describing the ripple dynamics under multipulse irradiation is reported and compared with the experimental findings.
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  • 244
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    Journal of Applied Physics 74 (1993), S. 1437-1439 
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    Notes: Lattice-matched and strained InxGa1−xAs/In0.52Al0.48As single quantum wells with x=0.53 and x=0.60 have been studied by the optical modulation technique of photoreflectance (PR) at room temperature. The measurements have allowed the observation of interband transitions from the heavy- and light-hole valence subbands to the conduction subbands. The PR data have been adjusted with a least-squares fit to the first-derivative functional form. The energetic positions of the optical transitions deduced from the fit have been compared with theoretical values obtained by an envelope function model calculation including strain effects. The best adjustment allowed the determination of the conduction-band offset parameter Qc which is found equal to 0.71±0.07 for the lattice-matched and strained compositions.
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  • 245
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    Notes: Intense photostimulated luminescence (PSL) with a peak at 420 nm is observed in ultraviolet (UV)-light-irradiated europium-doped potassium chloride (KCl:Eu) single crystals. The PSL characteristics of UV-irradiated KCl:Eu for optical memory application are studied. The excitation and emission mechanisms of the 420 nm PSL, which are consistent with the results obtained, are discussed.
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  • 246
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    Journal of Applied Physics 74 (1993), S. 1448-1450 
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    Notes: The microwave properties of high-Tc Y1Ba2Cu3Oy bridges have been measured at the frequency f=22 GHz at 4.2 K by means of a high sensitive radiometric probe method. The results, explained by the coherent hypervortex motion, show discontinuities in current-voltage characteristics, harmonic and subharmonic voltage steps under the external microwaves, and self-radiation peaks corresponding to the moving frequencies of hypervortices across the bridge.
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  • 247
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    Journal of Applied Physics 74 (1993), S. 1451-1452 
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    Notes: The effect of impact ionization has been taken into account in the calculation of the maximum solar cell efficiency in the thermodynamic limit. A red shift of the optimum band gap is observed with respect to the Shockley–Queisser result. A maximum solar cell efficiency of 60.3% at Eg=0.8 eV is predicted, which compares with 43.9% at Eg=1.1 eV for the usual case. In order to obtain a significant increase in η, an impact ionization probability of at least a few percent is required. A most pronounced effect is observed for bandgap energies below about 1 eV.
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  • 248
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    Journal of Applied Physics 74 (1993), S. 1453-1455 
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    Notes: In the InxGa1−xAs-GaAs coupled double quantum well system the free exciton in the GaAs barrier is directly coupled to the symmetric heavy-hole free exciton in the quantum well. In contrast the free exciton in the barrier does not couple to the symmetric light-hole free exciton in the quantum well, or to Landau levels associated with the lowest energy conduction and valence subband levels. These results are explained by momentum conservation rules.
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  • 249
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    Journal of Applied Physics 74 (1993), S. 1462-1462 
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    Topics: Physics
    Notes: It is shown that a recent analysis by Cho et al. [J. Appl. Phys. 72, 3363 (1992)] of surface-barrier detectors does not represent a new approach and is affected by gross errors, which lead to a wrong factor of 1/2 in the charge-collection probability and to the incorrect conclusion that one- and three-dimensional charge-diffusion models disagree.
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  • 250
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    Journal of Applied Physics 74 (1993), S. 1459-1461 
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    Notes: High-Tc Bi2Sr2CaCu2Oy films have been prepared using the surface diffusion process, with the screen printing of Bi2O3, SrCO3, and CaCO3 (Bi:Sr:Ca=2:2:2) mixed powders on Cu-deposited alumina substrates. Through the heating at temperatures above 400 °C, CuAl2O4 buffer layers were formed via an interaction between the Cu layer and alumina. The Bi2Sr2CaCu2Oy films, heat treated at 860 °C for 30 min in air, have a zero resistance at 72 K. The x-ray diffraction, scanning electron microscope, and energy dispersive x-ray analysis studies show that the Bi2Sr2Ca1Cu2Oy films are strongly c-axis oriented along the direction normal to the alumina substrate, and the CuAl2O4 buffer layer acted as a barrier to suppress the interdiffusion of Al ions into the superconducting films.
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  • 251
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    Journal of Applied Physics 74 (1993), S. 777-782 
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    Topics: Physics
    Notes: This article presents a simple, yet general and exact analytic-numerical method of solving one-dimensional quantum mechanics problems. It is based on the concept of dividing an arbitrary potential into convenient segments and analyzing the multiple reflection of a plane matter wave between neighboring potential walls. Amplitude reflection and transmission coefficients of each segment are the basis for the analysis. A simple iterative technique for calculating them by a square barrier approximation is given. This method is applicable to various potential barriers, wells, and periodic structures including continuous variations of potential energy and particle effective mass.
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  • 252
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    Notes: The effect of thermal-diffusion charge on the x-ray energy response of silicon surface-barrier (SSB) detectors have generally been ignored; consequently, the SSB response has been believed to be analyzed using the thickness of the depletion layer alone. Our new theory on the SSB x-ray response [J. Appl. Phys. 72, 3363 (1992)] was prepared for addressing recent confusion on plasma x-ray analyses using SSB detectors [Rev. Sci. Instrum. 59, 1380 (1988); 61, 693 (1990); 63, 4850 (1992)]. This approach was made under the assumption of a dominant contribution of the diffusion-charge signal in the vicinity of the x-ray incident location because of the strong reduction of the x-ray produced charge within the thermal-diffusion length. In this report, the comparison between this approximation (having an approximated solution) and the exact numerical calculation (using an integral form) is carried out. Necessity and importance of such three-dimensional treatments for the data analyses as well as the design of multichannel semiconductor-array detectors developed for plasma x-ray tomography diagnostics are highlighted. Furthermore, for the total diffusing-charge amount, the calculated results from our theory and the values using the comment from Donolato agree well within the accuracy of 1%.
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  • 253
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    Journal of Applied Physics 74 (1993), S. 771-776 
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    Notes: We describe a new noncontacting method for measuring the temperature of electrically conducting objects by sensing the magnetic field noise. When a high-Q antenna is placed close to a conductive material, e.g., a hot metal plate, the effective noise temperature of the antenna becomes proportional to the temperature of the material. Contrary to the conventional noise thermometer in which a resistor is embedded in the material, the method requires neither galvanic nor thermal contact. If the antenna impedance at different frequencies is known, the temperature of the object can be calculated from the total voltage noise of the antenna. We show, however, that for high-Q antennae the knowledge of the impedance at resonance is adequate to determine the unknown temperature. Consequently, the temperature of moving objects can be measured via synchronous monitoring of the total noise of the antenna and its impedance at resonance. Since only electrically conductive objects create magnetic field noise, the method is immune to nonconductive contamination of the surface.
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  • 254
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    Journal of Applied Physics 74 (1993), S. 1456-1458 
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    Topics: Physics
    Notes: A material for thermally stable self-aligned silicide technologies has been developed using sequentially deposited Ti/Ta on polycrystalline silicon. At lower annealing temperatures below 1000 °C two separate phases were found by cross-sectional transmission electron microscopy to exist in the form of bilayer TiSi2/TaSi2. The formation of a ternary phase (TiTa)Si2 has been observed at a higher temperature of 1000 °C. Consequently, the ternary (TiTa)Si2 layer could be kept extremely flat, with a sheet resistance of 5 Ω/(D'Alembertian), even after 1000 °C, 30 min annealing. Cross-sectional transmission electron micrographs of the structure clearly reveal that no agglomeration occurs during the heat treatment.
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    Journal of Applied Physics 74 (1993), S. 783-789 
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    Topics: Physics
    Notes: The low-temperature four-wave mixing (FWM) photorefractive response was investigated in undoped Bi12GeO20 (BGO) crystals. The FWM diffraction efficiency increases as the temperature is lowered until a local maximum is reached after which it decreases. The temperature where the maximum intensity FWM signal occurs depends on the write conditions. A model assuming both electron and hole gratings was used to describe the observations. Two shallow trap levels of 0.015 and 0.08 eV were identified as being responsible for the fast decay (〈1 s) components of the FWM signal in undoped BGO.
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  • 256
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    Journal of Applied Physics 74 (1993), S. 790-796 
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    Topics: Physics
    Notes: A comprehensive investigation on the spectroscopic properties and laser performance of Nd3+ doped GdLiF4 (GLF), a new laser crystal, is reported. Our high resolution absorption and emission spectra for GLF are nearly identical to those of Nd:LiYF4 (YLF), a well known laser crystal, strongly suggesting that the two crystals are isostructural. The laser performance of Nd:GLF is very similar to that of Nd:YLF. A maximum laser-pump-laser slope efficiency of 68% and 67% was obtained for low (1.0 at. %) and high (4.0 at. %) Nd concentration GLF respectively. Concentration quenching of the fluorescence decay time was observed and appears to be due to the dipole-dipole interaction between the isolated Nd3+ ions and Nd3+ ion pairs.
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    Journal of Applied Physics 74 (1993), S. 797-801 
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    Notes: Data are presented on the 300 K (and 77 K) continuous photopumped laser operation of AlyGa1−yAs-GaAs-InxGa1−xAs quantum-well heterostructures (QWHs) that have been oxidized (H2O vapor+N2, 425 °C) selectively along the high-band-gap heterolayers located on either side of a GaAs waveguide (WG) region with an InxGa1−xAs QW in its center. Transmission electron microscope images show that the oxide-embedded GaAs-InxGa1−xAs WG+QW active region remains unoxidized and thus is sandwiched between electrically insulating AlyGa1−yAs native oxide layers. The thresholds for photopumped 300 K continuous laser operation of the as-grown and oxide-embedded QWHs are approximately equal after differences in the Ar+-laser photopumping efficiencies are considered.
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    Journal of Applied Physics 74 (1993), S. 802-808 
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    Notes: Intractable low-mode nonuniformities caused by power imbalance or pointing error of beams are studied quasi-analytically based on Skupsky's axially symmetric model [S. Skupsky and K. Lee, J. Appl. Phys. 54, 3662 (1983)]. These nonuniformities can be improved by decreasing the imperfections σPΩ, or by increasing the number of laser beams NB: deteriorated irradiation uniformity is shown to be proportional to σPΩ/(square root of)NB. Criteria of these imperfections for high irradiation uniformity [≤1% root-mean square (rms)] are then presented in terms of NB. The model is further extended to treat general asymmetric beam patterns. Optimization of beam pattern is also a central issue.
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    Journal of Applied Physics 74 (1993), S. 809-812 
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    Notes: In high-power AlGaAs window structure lasers with a window grown on facets (WGF) structure, dependence of window effects on Al content of the window layer is examined. When the Al content of the window layer is more than that of the cladding layer, the window effects are found. But, in other cases, the window effects do not occur. A calculation of a carrier leakage from the active layer to the window layer is performed. From the result, we deduce that the reduction of the window effects is caused by the carrier leakage. In the WGF laser with the confirmed window effects, a maximum output power of 350 mW is achieved and highly reliable operation under 100 mW at 50 °C beyond 10000 h is attained.
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    Journal of Applied Physics 74 (1993), S. 813-818 
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    Notes: A model to describe fanning effects in photorefractive crystals is presented. The intensity distribution of the fanning beam for one incident beam and two incident beams in 45°-cut BaTiO3 crystals has been studied theoretically and experimentally, with good agreement. The theoretical results suggest that, when there is a fanning effect, only at intermediate effective interaction lengths does the signal beam have a high gain in two-wave mixing. The transient behavior of the fanning beam in a 45°-cut BaTiO3 crystal has also been studied theoretically and experimentally.
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    Journal of Applied Physics 74 (1993), S. 819-824 
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    Notes: GaInP/AlInP quasi-quaternary (QQ) compounds grown by gas-source molecular-beam epitaxy were systematically investigated. Quasi-quaternary properties were obtained with GaInP/AlInP short-period superlattices when the thickness of the AlInP layers was less than 3 ML. Equivalent band-gap values of QQ compounds were defined in terms of the layer thickness ratios of the GaInP and AlInP layers. Using GaInP/AlInP quasi-quaternary compounds, 607–640-nm wavelength QQ lasers with 20-nm QQ active layers were fabricated. Threshold current densities as low as 1.5 kA/cm2 were attained for QQ lasers emitting at 635 nm without the presence of strain or quantum-well effects.
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    Journal of Applied Physics 74 (1993), S. 832-838 
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    Source: AIP Digital Archive
    Topics: Physics
    Notes: In SF6 gas at 5–30 Torr, self-breakdown spark discharges starting in a constricted phase expanded spatially when the discharge current decayed to a critical value. The strength of the electric field increased from 400 to 2×103 Td in E/N, where 1 Td=10−21 V m2, where E is the electric field and N is the neutral gas number density. At the same time, the optical emission from the spark increased in strength and ionization instabilities started to grow. In the decay phase of SF6 spark discharge, negative ions strongly enhanced electron diffusion in the multipolar diffusion that resulted in the expansion and the excitation of ionization instabilities.
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    Journal of Applied Physics 74 (1993), S. 848-852 
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    Topics: Physics
    Notes: With the use of both a movable magnetic filter and a plasma grid, plasma parameters (H2-CH4 or Ar-CH4 plasmas) are spatially well controlled. At any filter position, plasma parameters change steeply across the magnetic filter. Then, a plasma source is divided into the two parts, i.e., the source plasma region (high density plasma with energetic electrons) and the diffused plasma region (low density and low-temperature plasma without energetic electrons). Plasma parameters in the diffused plasma are well controlled by changing the plasma grid potential. The role of the magnetic filter (i.e., preferential reflection of energetic electrons) is well clarified by computer simulation. The relation between plasma parameters and some species of neutral radicals is also briefly discussed.
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    Journal of Applied Physics 74 (1993), S. 6178-6185 
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    Topics: Physics
    Notes: ZnSexTe1−x epilayers were investigated by means of luminescence, reflectivity, and temperature dependence in the concentration range 0〈x〈0.4. The studied ZnSexTe1−x epilayers with thicknesses of about 1.5 μm were grown on GaAs substrates by metalorganic vapor phase epitaxy. It was found that the luminescence and reflectivity spectra of the mixed crystals are strongly affected by the compositional disorder. A continuous transition from the recombination through free and bound exciton states to the recombination of excitons localized by the compositional fluctuations of the mixed crystal was observed in the concentration region of about x=0.25. The position of the excitonic band edge was derived from the photoluminescence excitation spectra and from temperature dependence of the emission spectra.
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    Journal of Applied Physics 74 (1993), S. 6174-6177 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Post-hydrogenation anneals of shallow SiGa donors in GaAs indicate that their reactivation rate is enhanced in the presence of an applied electric field. We show that existing data are consistent with the SiGa-H complex being a deep donor dissociating only via its ionized state. The 0/+ level of this deep donor is found to be at EC−0.75 eV. There is no need to appeal to the existence of negatively charged hydrogen to account for the reactivation of SiGa donors.
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    Journal of Applied Physics 74 (1993), S. 6186-6190 
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    Topics: Physics
    Notes: The fixed-point iteration method is extended to the finite element solution of the nonlinear Poisson equation of semiconductor devices. The boundary value problem is derived and shown to have a global convergence. In addition, using explicit formulas to update the value of the electrostatic potential, the solution of simultaneous equations is avoided. A numerical example of a metal-oxide-semiconductor field-effect transistor at thermal equilibrium is presented.
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    Journal of Applied Physics 74 (1993), S. 6197-6207 
    ISSN: 1089-7550
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    Topics: Physics
    Notes: A critical step in the development of all hydrodynamic transport models (HTMs), derived from moments of the Boltzmann transport equation, is the introduction of accurate closure relations to terminate the resulting infinite set of macroscopic equations. In general, there are a number of resulting integral terms that are highly dependent on the form of the true electron distribution function. The so-called heat flux term is one very important higher-moment term that requires attention. Methods for the accurate construction of an improved heat-flux model are presented. In this construction, a higher-moments approach is combined with a unique definition of electron temperature (i.e., based upon an ansatz distribution) to investigate the effects of conduction-band nonparabolicity and distributional asymmetry. The Monte Carlo method has been used to evaluate the resulting model closures and to study microscopic electron dynamics. These investigations have identified an important relationship between a particular symmetric (i.e., thermal) component of the electron distribution function and the heat flow vector. This knowledge is important because all the parameters in the HTM must be closed (i.e., related to each other through a common set of system variables) before the technique can be accurately applied to the study of electron transport in semiconductor devices.
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    Journal of Applied Physics 74 (1993), S. 6191-6196 
    ISSN: 1089-7550
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    Topics: Physics
    Notes: Highly densified 0.99 SnO2-0.01 CuO-based ceramics with antimony, tantalum, or niobium oxides as additives have been prepared. Samples have been characterized by dc conductivity and complex impedance spectroscopy as a function of temperature and by current density as a function of electric field. Microstructures have been analyzed by scanning electron microscopy, electron microprobe, and Auger spectroscopy. The electrical properties of Ta- and Nb-doped ceramics are grain boundary controlled at least at low temperature. Sb-doped materials show a different electrical behavior due to the presence of a segregation layer of antimony which inhibits grain boundary effects.
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    Journal of Applied Physics 74 (1993), S. 6212-6216 
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    Topics: Physics
    Notes: In this article the contactless microwave detected photoconductance decay technique (MW-PCD) is used to examine two important issues relating to carrier mobility. One is whether or not minority and majority carrier lattice scattering mobilities are equal, and the other whether or not mobilities depend on growth method of the semiconductor material. To answer these two questions, the minority carrier mobility for Czochralski-grown silicon has been measured by the MW-PCD method. The results are compared with both majority carrier mobility measurements for this material and minority carrier mobility values for float-zone material. The method employed by the MW-PCD analysis also yields bulk lifetime estimates. The results confirm earlier suspicions that differences in material quality can be the reason for differences between minority and majority carrier mobility measurements at doping levels below 1017 cm−3 rather than any fundamental difference in the scattering mechanisms of the two types of carriers.
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    Journal of Applied Physics 74 (1993), S. 6227-6233 
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    Topics: Physics
    Notes: The behavior of linear arrays of cells composed of quantum dots is examined. Each cell holds two electrons and interacts Coulombically with neighboring cells. The electrons in the cell tend to align along one of two axes resulting in a cell "polarization'' which can be used to encode binary information. The ground-state polarization of a cell is a highly nonlinear function of the polarization of its neighbors. The resulting bistable saturation can be used to transmit binary information along the line of cells, thus forming a binary wire.
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    Journal of Applied Physics 74 (1993), S. 6208-6211 
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    Topics: Physics
    Notes: The electrical conductivity of polycrystalline cadmium telluride having an impurity content of less than 200 ppm was measured in the temperature range of 675–975 K and in the ambient tellurium pressure varying from 1.0×10−15 atm to 2.0×10−5 atm. The electrical conductivity of polycrystalline CdTe doped with monovalent as well as trivalent cations has also been determined under similar conditions. The conductivity was found to change from predominantly p to predominantly n type at a critical tellurium pressure depending upon the temperature. The electrical conductivity increased with the increase in ambient tellurium pressures reached a maximum, and then decreased with further increase in tellurium pressure. The results have been used to discuss the probable defect structure of CdTe particularly with reference to the variation in ambient tellurium pressure.
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    Journal of Applied Physics 74 (1993), S. 6217-6221 
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    Topics: Physics
    Notes: An equivalent noise source with a useful functional form, which enables easy calculation of noise in semiconductor devices, is derived in a unified way for Boltzmann transport equations from the classical expression of the noise source. Since the derivation is carried out within the framework of the relaxation-time approximation, the equivalent noise source is good for elastic or randomizing collisions and is valid when the carrier distributions are not far from the local equilibrium distributions. The derived functional form of the equivalent noise source is shown to be the same as the one used during derivation of the steady-state Nyquist theorem. Also, the recent controversy over correctness of the classical expression of the noise source is discussed.
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    Journal of Applied Physics 74 (1993), S. 6234-6241 
    ISSN: 1089-7550
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    Topics: Physics
    Notes: Efficient self-consistent calculations of dynamically one-dimensional electron gas systems using the finite element method with nonuniform mesh of triangular elements have been implemented. Both self-consistent semiclassical and self-consistent quantum mechanical calculations are carried out. In the semiclassical treatment, Poisson's equation is solved self-consistently with the induced electron density determined by the Thomas–Fermi continuum formalism. Newton's method is implemented to ensure fast convergence. In the quantum mechanical treatment, quasi-one-dimensional subband levels are determined by solving the effective mass Schrödinger equation and the induced electron density is determined by filling the occupied subbands according to Fermi–Dirac statistics for zero temperature. Self-consistency is achieved using Newton's method with an approximate Jacobian derived from the Thomas–Fermi approximation. Etched ridge and split gate semiconductor quantum wires based on selectively doped AlGaAs/GaAs heterostructures are studied. The results of the semiclassical and quantum mechanical calculations are compared. We find that the two approaches predict similar lineal densities of induced electrons for a range of cases but that the dependence of electron density on external parameters can differ significantly. The resulting potential shapes and electron distributions can also be quite different. Specifically, the semiclassical approach results in shallower confining potential wells and less spread of the electron distribution in the direction perpendicular to the heterointerface than is found in the quantum mechanical approach.
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    Journal of Applied Physics 74 (1993), S. 6222-6226 
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    Topics: Physics
    Notes: A three-band model that considers the coupling effects among the conduction band, light-hole band, and spin-orbit split-off–hole band is used to investigate carrier transport in InAs/AlSb/GaSb interband tunneling structures. The E-k relations and the boundary conditions suitable for the three-band model are derived from the Hamiltonian. Good agreement in the peak current density and peak voltage between experiments and model has been achieved. It is also found that the three-band model shows better agreement in the peak current densities than those of two-band model. It indicates the importance of the coupling effects of the spin-orbit split-off–hole band to the InAs/AlSb/GaSb interband tunneling structures. The valley current components, the key ingredient of the peak-to-valley current ratios, such as the thermionic currents and hole tunneling current, are studied to fit the experimental peak-to-valley current ratios. It is found that the thermionic currents can be neglected due to the large band offset (barrier height). The hole tunneling current, the major part of valley current, decreases with the AlSb barrier thickness. However, deviations from the experiments still exist. Furthermore, the effect of the band bending at the interfaces influences the I-V characteristics.
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    Journal of Applied Physics 74 (1993), S. 6251-6255 
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    Topics: Physics
    Notes: Epitaxial PtSi/p-Si(100) contacts were fabricated by co-depositing Pt and Si on p-Si(100) at 450 °C in a dual electron gun chamber at a base pressure of 10−10 Torr. The PtSi/p-Si(100) film possessed six types of epitaxial modes, as indicated in the electron diffraction patterns. The average grain size of the PtSi grains was measured to be 100–300 A(ring) through the Moiré fringe image. The Schottky barrier height of the epitaxial PtSi/p-Si(100) diode was determined to be 0.249 eV at 100 K, with an ideality factor of 1.04. In contrast to this, the Schottky barrier height of the polycrystalline PtSi/p-Si(100) diode was 0.229 eV at 100 K, with an ideality factor of 1.05. The difference in Schottky barrier height was attributed to the difference in the atomic arrangement at interface.
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    Journal of Applied Physics 74 (1993), S. 6261-6265 
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    Topics: Physics
    Notes: Electron energy loss rates via the emission of acoustic phonons in moderately degenerate GaInAs/AlInAs high electron mobility transistor structures are investigated at electron temperatures between Te=1.8 and 15 K. Two experimental techniques, Shubnikov–de Haas and mobility measurements were employed in the investigations. The results are compared with a model based on three-dimensional electron energy loss by piezoelectric and deformation potential scattering. It is shown that the enhanced loss rates at high electric fields as obtained using the former technique is the result of its failure at these fields. The agreement between the results of the mobility experiments and the theory is excellent over the temperature range of interest.
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    Journal of Applied Physics 74 (1993), S. 6247-6250 
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    Topics: Physics
    Notes: An inverse parabolic quantum well was successfully grown by molecular-beam epitaxy using a digital compositional grading superlattice composed of Al0.36Ga0.64As/GaAs. The photoluminescence and photocurrent measurements for this structure gave a good agreement between experimental and theoretical results. Large Stark shift and amplitude reduction of 1e-1hh exciton resonance under applied electric field were found in the photoluminescence spectra, which are substantially larger than the conventional square quantum well. These properties benefited from the concept of local-to-global state transitions.
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    Notes: We investigate the effect of methane/hydrogen (CH4/H2) reactive ion etching (RIE) and a subsequent annealing process on AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures. We use low temperature Hall, Shubnikov–de Haas, and photoluminescence measurements. We observe that the electron density and mobility of the two-dimensional electron gas in the heterostructure is strongly reduced by the RIE process. After annealing the electron density fully recovers for both types of structures, whereas the electron mobility responds differently. While for the pseudomorphic AlGaAs/InGaAs/GaAs heterostructures thermal annealing restores the electron mobility completely, for the AlGaAs/GaAs heterostructures the electron mobility recovers only to 60% of the original value. This indicates that in the AlGaAs/GaAs heterostructures the structural damage induced by reactive ion etching is not fully removed by thermal annealing. This is confirmed by photoluminescence measurements at low temperatures.
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    Journal of Applied Physics 74 (1993), S. 6256-6260 
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    Topics: Physics
    Notes: Careful measurements have been made of the temperature dependence of the barrier height (φb) and the Richardson constant (A**c) for several metal/GaAs (111)B Schottky diodes using current-voltage and capacitance-voltage techniques. The metals used, aluminium, copper, and gold, were evaporated at a base pressure of 10−10 Torr, to ensure no native oxide at the interface. The values obtained for the temperature dependence of the barrier height were −(4.3±0.1)×10−4 eV K−1 for all diodes except for the Cu/GaAs (111)B diode where it was −(4.7±0.1)×10−4 eV K−1. The calculated Richardson constants were 0.51×104, 0.88×104, and 1.37×104 A m−2 K−2 for the Al, Au, and Cu GaAs (111)B diodes respectively, and 0.50×104 A m−2 K−2 for the Al/GaAs (100) comparison diode. The exactness of results between the Al/GaAs (111)B and the Al/GaAs (100) Schottky diodes is believed to indicate the formation of a thin interfacial layer of AlAs, probably formed during the metal evaporation. It was found that the semiconductor orientation had a subtle effect upon the Richardson constant compared to similar Schottky diodes fabricated on (100) GaAs. The variation in A**c indicates that the band structure of the metal plays a part in the formation of a Schottky barrier, and the similarity in the value of α indicates that the barriers are pinned relative to the same position. In comparison to the GaAs band gap variation with temperature, this appears to be pinned relative to the valence band of the semiconductor.
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    Journal of Applied Physics 74 (1993), S. 6266-6273 
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    Topics: Physics
    Notes: A numerical analysis is presented of semiconductor heterojunctions containing deep defect levels, in order to study the mechanism of generation or recombination of electron-hole pairs induced by thermal or optical transitions involving deep defect energy levels. The final aim is to determine the width of the effective generation or recombination region Wgr and compare to the width of the space-charge region W. Numerical solution of Poisson's equation and the current-transport equations yield the electrical potential and the quasi-Fermi levels for electrons, holes, and occupied deep defects. The resulting transition rates yield the net generation rate of electron-hole pairs as function of position x. An application is made to an InGaAs/InP heterojunction with a midgap level on the InGaAs side. Results for a Si homojunction with a deep acceptor level at Ec−0.54 eV are given for comparison. The applications show that in all cases of reverse bias Wgr is smaller than W, reaching for some parameters describing the heterojunction system a value of 1/3 for the ratio Wgr/W. Usually the two widths are assumed to be equal. The physical origin of this reduction is the existence of competing recombination processes due to free-carrier tails extending from the neutral regions into the space-charge region. In heterojunction structures, this effect is even enhanced in case of accumulation of free carriers due to conduction- or valence-band discontinuities at the junction plane. It is shown that if one considers defects states only in a finite region close to the junction, this may yield marked differences in the value of the resulting current as compared to the homojunction case.
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    Journal of Applied Physics 74 (1993), S. 6274-6280 
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    Topics: Physics
    Notes: A Monte Carlo model of parallel high-field transport in III-V heterostructures is presented. Special features of the model are the following: only two-dimensional electron states are considered, the possible existence of secondary wells inside the barriers is accounted for, and nonparabolicity effect and quantization of satellite valleys are included. The wave functions and eigenenergies are calculated by self-consistent resolution of Poisson and Schrödinger equations. The effect of nonparabolicity on dispersion relations is determined at first order by a perturbation method. First, the simple case of an infinite GaAs square well is investigated as a test for the model, then more realistic heterostructures are considered. A study of a modulation-doped pseudomorphic AlxGa1−xAs/In0.15Ga0.85As structure shows that the electric field induces a significant repopulation of the doped AlGaAs layer. When x=0.32, this real-space transfer is strongly correlated with the intervalley transitions toward X valley states. For In0.52Al0.48As/In0.53Ga0.47As the situation is quite different and a good confinement in the InGaAs well is preserved even at high fields owing to the large band offset in the L valley. This study demonstrates a complicated influence of band structure on electron transport in heterostructures.
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    Journal of Applied Physics 74 (1993), S. 6281-6288 
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    Topics: Physics
    Notes: A theoretical investigation of impurity scattering limited mobility in a quantum wire is presented. The general method of mobility calculation is presented and some approximations are made in order to simplify the problem and reduce the amount of computations. Cylindrical symmetry of the wire is assumed and the carriers are assumed to be confined by an infinite barrier. The mobility has been computed using the exact wave functions and the results are compared with those obtained using constant or Dirac wave-function approximations. It is shown that the mobility is strongly influenced by the shape of the wave function. The screening effect is introduced using two different models. At high temperatures both models yield similar results whereas at low temperature a significant discrepancy is observed. The influence of important parameters such as wire dimension, carrier density, and temperature on impurity scattering mobility is investigated. A comparison of impurity scattering mobility in quantum well and quantum wire is also presented. Finally, it is shown that the electron-transport properties in quantum wires may be strongly enhanced by the use of a large spacer.
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    Journal of Applied Physics 74 (1993), S. 6293-6296 
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    Topics: Physics
    Notes: Magnetic-field distribution measurements over a patterned superconducting strip line sample were conducted using a superconducting quantum interference device pickup coil, showing that, in the range of 500 μG–50 mG of perpendicular magnetic field B⊥,i, the superconducting films record previous magnetic histories precisely. The magnetic-field distribution with a field B⊥,i applied at all times is identical to one with no field applied at any time. A calculation based on the flux trapping model explains these results indicating that all the magnetic fluxes penetrate the superconducting thin films.
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    Journal of Applied Physics 74 (1993), S. 6289-6292 
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    Topics: Physics
    Notes: The effect of oxygen loss on the luminescence of YBa2Cu3O7−x has been investigated by cathodoluminescence (CL) in the scanning electron microscope (SEM) and by Raman microprobe measurements. The results herein indicate that a CL band at 530 nm is related to oxygen loss rather than to impurity phases such as Y2O3 formed in the material by electron irradiation in the SEM.
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    Journal of Applied Physics 74 (1993), S. 6302-6307 
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    Topics: Physics
    Notes: A formalism is presented for determining the magnetoelastic (ME) coefficients of tetragonally distorted surfaces and thin films. The equation of motion of the magnetization is determined from free-energy-density expressions containing terms for crystalline and shape anisotropy, ME anisotropy, and applied field. Canonical magnetization curves, described by simple equations of motion and recorded under different strains, are shown to differ by an area equal to the magnetoelastic energy density. Thus, division of this area by the applied strain allows determination of the ME coefficients. A more general method is proposed which allows ME coefficients to be determined from arbitrarily shaped M-H curves taken at different strains by calculating the area between them over a conveniently chosen magnetization range. This reduces error in the ME coefficients by avoiding hysteretic effects at low fields and ambiguity about saturation at high fields. Examples are given that illustrate how the magnetic anisotropy and ME coefficients can be determined in three simple cases from Kerr or M-H loops in ultrathin films subjected to various bending strains.
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    Journal of Applied Physics 74 (1993), S. 6297-6301 
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    Topics: Physics
    Notes: Exchange coupling between a ferromagnetic film and an antiferromagnetic NiO film was investigated. Bilayered ferromagnetic Ni81Fe19/antiferromagnetic NiO films had a large exchange coupling field and blocking temperature of about 200 °C. In trilayered Ni81Fe19/ferromagnetic (Ni81Fe19)100−xNbx/NiO films, a way could be developed to control the exchange coupling field at a small value by increasing the Nb of the intermediate film. The most important factor in the control seemed to be that the numbers of magnetic Fe and Ni atoms of (Ni81Fe19)100−xNbx, which contributed to the exchange coupling between (Ni81Fe19)100−xNbx and NiO, varied with the existence of nonmagnetic Nb at their interface. From experimental results with other trilayered Ni81Fe19/ferromagnetic (Ni100−xFex)93Nb7/NiO films, it was ascertained that the exchange coupling field seemed to be independent of the magnetic moment of the ferromagnetic film although unidirectional anisotropy constant was proportional to it. As for blocking temperature, it did not seem to be determined by the magnetism of the ferromagnetic material but the magnetism of the antiferromagnetic material.
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    Journal of Applied Physics 74 (1993), S. 6313-6316 
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    Topics: Physics
    Notes: The dangling bonds in pellets made by compacting nanometer-sized silicon nitride (NASN) grains are studied by electron-spin resonance (ESR). The ESR results of NASN show that the number of dangling bonds in NASN is about three orders of magnitude higher than that of coarse-grained silicon nitride. It is also observed that compaction pressure and thermal treatment temperature affect the type and the number of dangling bonds. An explanation is presented for the changes in the dangling bonds caused by the processes of compaction and thermal treatment.
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    Journal of Applied Physics 74 (1993), S. 6308-6312 
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    Notes: We studied the variation of the in-plane lattice constant of Co layers as a function of layer thickness in Co/Au superlattices. The samples were grown at various temperatures by molecular-beam epitaxy and were investigated using reflection high-energy electron diffraction. It was found that the strains of Co layers are larger in a sample grown at a higher temperature. It might be thought that larger strains possibly introduce larger magnetoelastic anisotropy, contributing to the perpendicular magnetic anisotropy of the superlattices. However, magnetization measurements show that the magnetic anisotropy energy is smaller in the sample grown at a higher temperature. Possible causes of this discrepancy are discussed.
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    Journal of Applied Physics 74 (1993), S. 6317-6321 
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    Topics: Physics
    Notes: Ceramic/polymer composites made of calcium-modified lead titanate grains in the matrix of a copolymer of vinylidene fluoride and trifluorethylene, in a 65:35 volume fraction percentage, respectively, were produced in order to obtain mechanically strong ferroelectric films with improved piezo- and pyroelectric properties. Their poling behavior was studied using a modified ferroelectric hysteresis measurement setup that allowed for the measurement of the remanent polarization Pr and coercive field Ec, as a function of the peak of the sinusoidal applied field, the frequency of the excitation, and the poling temperature. The ranges of variation of the electric field, frequency, and temperature were from 5 to 25 MV/m, from 0.04 to 2 Hz, and from 50 to 120 °C, respectively. Estimates of the activation field and saturation polarization were calculated based on these measurements. The observed properties in the ferroelectric composites were then compared and correlated with the properties of the ceramic material.
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6322-6327 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave interferometry appears to be a promising method for the study of wave and mass velocity in shocked dielectric materials. This paper discusses the mathematics concerning the frequencies and amplitudes in the microwave reflections from the shock wave and from an impacting piston which drives the shock into a nonreacting porous solid. Methods for the determination of the state variables in the compressed region between the shock wave and the piston are given. In this paper, these methods have been confirmed by experimental measurements in nonenergetic materials in which there is no ionization from chemical reaction. The microwave reflection from the shock wave traveling through an inert media is shown to result from a dielectric discontinuity at the wave front. Studies on energetic materials (explosives and propellants) are considered in a companion paper where ionization associated with the chemical reactions is required to explain the increased reflection from the shock front.
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  • 291
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6335-6340 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the x-ray excited optical luminescence technique, we have investigated the soft x-ray induced photoluminescence of porous silicon in the optical region (200–900 nm) and the Si K-edge x-ray absorption fine structures of porous silicon in the near edge region. It is found that while porous silicon prepared at low current density (20 mA/cm2 for 20 min) exhibits a single broad luminescence band, porous silicon prepared at high current density (200 mA/cm2 for 20 min) exhibits three optical luminescence channels; i.e., in addition to the broad peak characteristic of all porous silicon, there are at least two additional optical luminescence channels at shorter wavelengths, one with modest intensity at ∼460 nm and the other a weak and very broad peak at ∼350 nm. These optical channels have been used to monitor the Si K-edge absorption of porous silicon in the near edge structure region. Analysis of the data shows that while the band at ∼627.5 nm corresponds to the bulk emission, the other channels are of a surface origin. These observations and their implications are discussed.
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  • 292
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6328-6334 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shocked porous ball powders have been investigated by means of microwave interferometric techniques. Equations developed for interferometric measurements on inert materials apply for energetic materials until reaction at the shock front begins. As reaction begins, the microwave interferometer (MI) output exhibits characteristic changes in both the absorption and reflection of the microwave signal. These changes have been related to hot spot development at the shock front. The hot spots in a reacting bed have been experimentally approximated to a first order by including metallic particles in unreacting beds and measuring their effects on the propagation of microwaves. With the aid of dielectric measurements of the metallized beds, hot spot concentrations as a function of time were predicted from the MI output of reacting beds.
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  • 293
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6341-6348 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical, semiempirical model is presented for the optical properties of AlxGa1−xAs for photon energies from 1.2 to 6 eV. For GaAs, the discrepancy between the calculated refractive index and the experimental data is about 0.003 at 1.8 eV, and is about 0.012 at 1.2 eV. For all the other AlxGa1−xAs alloys, the calculated optical properties are in satisfactory agreement with the experimental data for photon energies from 1.2 to 6 eV.
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  • 294
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6349-6352 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impact of reactive-ion-etching (RIE) on the near-surface crystal quality of Czochralski silicon has been studied by photoluminescence spectroscopy. The presence of carbon-related defects is investigated as a function of the pressure during CF4 RIE. The effects of adding hydrogen to the plasma as well as the time of treatment are studied and discussed in terms of defect formation and etch rate. Photoluminescence spectra of samples recorded after a magnetically enhanced reactive-ion-etching process are also presented. The introduction of defects depending on the self-bias voltage and the etch rate are investigated for different magnetic fields.
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  • 295
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6365-6367 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is proposed to control the wavelength of visible photoluminescence (PL) from porous silicon (PS). This is based on the post-anodization illumination technique which employs a filtered light with various maximum cutoff photon energies. As the illumination time increases, the PL spectra shift toward the higher energy side. This blue shift tends to stop at the time when the PL peak energy becomes close to the cutoff photon energy. The emission wavelength can be controllably tuned in a wide spectral range by changing the cutoff filter. These results give us a strong indication that the visible PL of PS is closely related to interband excitation in Si nanocrystallites, not to some surface chemical compounds.
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  • 296
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6353-6364 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependences of the spectral and total hemispherical emissivities of silicon have been experimentally determined, by using a technique which combines isothermal electron beam heating with in situ optical measurements. Emission spectra were used to deduce the absorption coefficient for phosphorus-doped silicon samples for wavelengths between 1.1 and 1.6 μm, in the temperature range from 330 to 800 °C. For lightly doped samples, the data show good agreement with a model which includes the effects of the various phonon-assisted processes involved in interband transitions in silicon, as well as the free-carrier absorption. For heavily doped samples the agreement was less satisfactory, possibly because of inadequacies in the model for free-carrier absorption. It was shown that reflection spectra can also be used to determine the absorption spectrum, for the range where the absorption coefficient lies between 1 and ∼70 cm−1. By fitting the theoretical model to the absorption coefficients derived from the reflection spectrum, it is possible to deduce the temperature of a sample, which is especially useful for temperatures less than 300 °C, where the thermal emission is very weak. The total hemispherical emissivity of the specimens was determined from the input electron-beam power densities and the measured temperatures. The total emissivity of a 390-μm-thick specimen of lightly doped silicon rises from 0.12 at 280 °C to a limiting value of 0.7 at 650 °C. This behavior is a consequence of the increase in the free-carrier concentration with the temperature. For heavily doped specimens the total emissivity remains approximately constant at ∼0.7 between 200 and 800 °C because the carrier concentration is high even at room temperature, and the additional thermal generation of carriers produces an insignificant change in the total emissivity.
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  • 297
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6368-6374 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical constants (n,K) of vacuum-evaporated polycrystalline CdSe thin films are determined over 900–3100 nm photon wavelengths. Variation of band gap and optical constants with film thickness and substrate temperature is studied. Anomalous variation of refractive index near the band gap is explained by the volume and surface imperfections. Average spin-orbit splitting of valence band (0.32) is estimated for the films deposited on mica substrates. A theoretical plot of refractive index near the band edge is done. The dispersion of refractive index in films is studied by considering a single-oscillator model.
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  • 298
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6383-6390 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical absorption spectra of quasi-1D GaAs quantum well wires are theoretically investigated within the framework of multiband effective mass theory. In the calculation, the mixing of heavy-hole and light-hole bands resulting from both 1D quantum confinement and electron-hole Coulomb interaction is considered. Detailed excitonic structures in the absorption spectrum near the band edge are clarified by taking into account Coulombic bound states and unbound continuum states. Polarization dependence of the optical absorption spectra is discussed in terms of the band mixing effects.
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  • 299
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6375-6382 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous silicon showing a two-layer structure is studied by stepwise peeling the surface layer to clarify the nonuniformity in photoluminescence (PL) emission as a function of depth. The upper layer is amorphous and luminesces at higher energy and efficiency. The deeper the depth or the lower the excitation energy Eex, the lower the PL peak Ep; but, at a low Eex, Ep is not sensitive to the depth. Both intrinsic PL emission and the variation of penetration depth with Eex contribute to the linear dependence of Ep on Eex, which is in contrast to the cases of a-Si:H and siloxene exhibiting thermalization gaps. The total PL excitation spectrum, the integrated PL intensities versus Eex, saturates rather than exhibiting a peak. Its leading edge profile is similar to that for the absorption spectrum, unchanged by the depth, and described by an Urbach tail with energy of 0.26 eV, which is 4–5 times larger than that of a-Si:H. The results can be understood based on silicon clusters embedded in amorphous silicon incorporating oxygen and/or hydrogen.
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    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6391-6396 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Avalanche breakdown in polycrystalline ZnS thin films can produce cold cathode hot electron emission. The physical processes behind this phenomenon are not well understood, nor is the nature of the electron energy distribution inside the ZnS during breakdown. Lowering the work function of the emission surface by evaporation of elemental cesium is discussed. The increase in emission current is compared to that from a tungsten filament and photoemission measurements are made, with results suggesting a non-Boltzman distribution of electron energies in the ZnS. The time profile of the emission current is investigated. A preliminary measurement of the energy distribution of the emission current is obtained with a retarding grid setup.
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