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  • 1
    Electronic Resource
    Electronic Resource
    Photocurrent and photoluminescence from quantum-confined electrons in periodically δ-doped Si-GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1987-1991 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photocurrent and photoluminescence experiments performed on periodical δ-doped GaAs reveal a signature of quantum-confined interband transitions. We present in this structure the observation of the transition energy at low temperature in the photocurrent spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354759
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  • 2
    Electronic Resource
    Electronic Resource
    Electron transport through GaAlAs barriers in GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 341-345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have analyzed electronic transport through a single, 200-A(ring)-thick, Ga0.74Al0.36As barrier embedded in GaAs. At low temperatures and high electric field, the Fowler–Nordheim regime is observed, indicating that the barrier acts as insulating layers. At higher temperatures the thermionic regime provides an apparent barrier height, decreasing with the field, which is equal to the expected band offset when extrapolated to zero field. However, for some samples, the current is dominated by the presence of electron traps located in the barrier. A careful analysis of the temperature and field behavior of this current allows to deduce that the mechanism involved is field-enhanced emission from electron traps. The defects responsible are tentatively identified as DX centers, resulting from the contamination of the barrier by donor impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354114
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  • 3
    Electronic Resource
    Electronic Resource
    Defect characterization in GaAlInAs alloys (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3530-3534 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy (DLTS) and capacitance-voltage measurements at various temperatures have been used to characterize defects in Si-doped (Ga1−xAlx)1−yInyAs materials for x=0.3 and different values of y (0, 0.005, and 0.07). We only detect DX centers, those associated with the doping impurity (Si), but also others associated with Te and, eventually, Sn not introduced intentionally. When the experimental conditions are chosen to obtain exponential transients, the shape of the DLTS spectrum and its variation with the filling pulse duration can be accounted for by this contamination; i.e., no sign of the so-called alloying effect is detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351431
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  • 4
    Electronic Resource
    Electronic Resource
    Semi-insulating epitaxial GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6274-6278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semi-insulating GaAs material results from the compensation of residual acceptor impurities and intrinsic defects by the so-called EL2 donor defects which possess a level at midgap. A semi-insulating layer can therefore be produced if it is possible to introduce a large enough concentration of EL2 defects. We describe a vapor-phase epitaxy technique which allows to introduce an EL2 concentration in the range 1015–1016 cm−3. This technique is made to reach very large growth rates, based on the fact that the EL2 concentration increases with the growth rate. The variation of the EL2 concentration versus the various growth parameters (substrate temperature, partial pressure, growth rate) have been monitored. The mechanism by which the incorporation of EL2 defects occurs has been determined, thus allowing one to get a given EL2 concentration reproducibly. This technique of growth, being inexpensive and fast, requiring no toxic gases, appears to be a reasonable alternative to the production of semi-insulating substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346869
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  • 5
    Electronic Resource
    Electronic Resource
    Li doping of GaAlAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4337-4340 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of unintentionally doped Ga1−xAlxAs epitaxial layers grown by molecular beam epitaxy, having various Al compositions (0.15, 0.18, and 0.29), have been Li diffused at 300 °C. Capacitance–voltage techniques show that the initial n-type doping concentrations (of the order of 1016 cm−3) increase after diffusion by typically a factor 5 to 10 demonstrating that isolated Li interstitials do exist and behave as donors. However, secondary-ion mass spectroscopy measurements show that the material contains 1019–1020 Li cm−3, which indicates that a large fraction of the Li impurities is not electrically active. Thus Li also produces defects as revealed by the fact that free electrons are frozen in the diffused layers below 77 K. Search for the existence of Li associated DX centers deep defects related to the donor impurities has been performed by deep level transient spectroscopy. Only the DX centers present before diffusion, i.e., associated with residual donor impurities, are detected in the layer of 0.29 Al fraction. This implies that either Li donors do not induce the existence of DX centers or electron emission from Li DX centers occurs below 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350816
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  • 6
    Electronic Resource
    Electronic Resource
    Neutron-induced defects in high-purity germanium (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2033-2043 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fast neutron-induced defects have been studied in high-purity n- and p-type germanium using capacitance techniques. Capacitance versus voltage has been applied to monitor the total defect introduction rate. The defects introduced by low-temperature (10 K) and room-temperature irradiations, as well as the native defects present in the As-grown materials, are characterized by deep level transient spectroscopy. The restrictions of these techniques when applied to a material having a low-free-carrier concentration are pointed out. The previous knowledge of the annealing behavior and introduction rates of defects created by electron irradiation allowed some information about the microscopic origin of the point defects observed to be obtained. The dominant defects induced by the irradiation are vacancy or divacancy related. The study of the stable traps at low temperature provides a reasonable understanding of the primary defects and their annealing behavior up to room temperature. The characteristics of the secondary defects created after low-temperature irradiation and annealing are compared with those created directly by room-temperature irradiation. The origin of the Ev+0.07 eV level present in dislocation-free high-purity germanium is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348728
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  • 7
    Electronic Resource
    Electronic Resource
    Oxygen in gallium arsenide (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 284-290 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of the deep level transient spectroscopy spectrum associated with the EL2 defect in epitaxial as well as bulk GaAs materials when they are contaminated by oxygen has been examined in detail. The degree of contamination is evaluated by ion mass spectroscopy. It has been observed that, as previously noticed, the EL2 spectrum contains two components. From the variations of the amplitude of these components versus time at different temperatures and versus electric field, it is concluded that, while one of these components is associated with the EL2 defect, the other one originates from the interaction of EL2 with interstitial oxygen. The deformation of the EL2 spectrum which is currently observed when using aluminum Schottky barriers is then understood as an effect of oxygen contamination and not due, as previously argued, to changes in the barrier characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347710
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  • 8
    Electronic Resource
    Electronic Resource
    Defects in electron irradiated GaInP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7229-7231 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a characterization of the defects created by electron irradiation at room temperature in n-type GaInP. Four electron traps, labeled E1–E4, and no hole traps have been detected using deep level transient spectroscopy in the temperature range 4–400 K. The corresponding energy levels and barriers associated with electron capture have been measured. The introduction rates, ranging from 4×10−3 to 0.4 cm−1, indicate that these defects are probably not primary defects but complexes resulting from the interaction of these primary defects between themselves or with impurities. This is not surprising, owing to the fact that defect annealing takes place below 300 K in InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354009
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  • 9
    Electronic Resource
    Electronic Resource
    Defects in epitaxial Si-doped GaInP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 260-266 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have characterized by capacitance-voltage and deep level transient spectroscopy measurements the only defect detected in Si-doped GaInP layers. This defect exhibits an ionization energy of 0.435 eV but is located only at ∼20 meV below the bottom of the conduction band. All its characteristics, i.e., energy level, apparent capture barrier, ionization energy, can be understood if the defect is a donor associated DX center. Its cross section for electron and hole capture have been measured. The effect of an electric field on the ionization energy confirms that the defect is indeed shallow and a donor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354156
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  • 10
    Electronic Resource
    Electronic Resource
    Defects in electron-irradiated GaAlAs alloys (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 284-290 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using deep-level transient spectroscopy, we have characterized the energy levels, barriers for electron capture, and introduction rates of the defects introduced by electron irradiation in liquid-phase epitaxy grown n-type (Te)Ga1−xAlxAs layers of various alloy composition (x=0.25, 0.40, 0.60, and 0.80). We observed five defects which present various type behaviors: energy levels linked to the valence band or to the L conduction bands, constant barriers, or varying in a manner consistent with the band structure. These results are in agreement with the understanding obtained previously on electron-induced defects in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354104
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