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  • American Institute of Physics (AIP)  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1896-1898 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High concentrations of electrically active phosphorus have been grown in Si epitaxial layers at 750 °C and below in an atmospheric pressure deposition system using PH3 and SiCl2H2 in H2. PH3 remarkably enhances the silicon deposition rate in the range 550–750 °C in contrast to previously reported doping studies using SiH4. Chemical concentrations as high as 2.5×1020 cm−3 with an electrical activity of 1×1020 cm−3 were obtained in layers that were free of defects by transmission electron microscopy. The doping level can be modulated between 1×1019 and 5×1016 cm−3 indicating that there are no complications due to dopant retention on sample or reactor wall surfaces. Emitter-base diodes formed in the epitaxial layers exhibited ideal forward and low-leakage reverse characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105066
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  • 2
    Electronic Resource
    Electronic Resource
    Heavy arsenic doping of silicon grown by atmospheric-pressure chemical vapor deposition at low temperatures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 454-456 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic doping of epitaxial grown Si over the temperature range from 850 °C to 550 °C was investigated in an ultraclean atmospheric-pressure chemical vapor deposition reactor. Growth was carried out from dichlorosilane (DCS) in H2 carrier gas. Arsenic could be incorporated into single crystal silicon at levels approaching 10 at. %. Carrier concentrations exceeding 1×1020/cm3 were obtained for the as-grown films. The material remained single-crystalline, as measured by ion channeling and cross-section transmission electron microscopy, and exhibited excellent surface morphology with no Hillock formation observed. AsH3 dramatically enhanced the growth rate of Si at lower temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106632
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  • 3
    Electronic Resource
    Electronic Resource
    Silicon epitaxy from silane by atmospheric-pressure chemical vapor deposition at low temperatures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1298-1300 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial silicon has been grown in an ultraclean system at atmospheric pressure and low temperatures (650–750 °C) using silane as a Si source in a He carrier gas. The depositions were nonselective (blanket) and demonstrate the broad capabilities of the low-temperature atmospheric-pressure growth apparatus that has previously been used for selective deposition of Si and SiGe from dichlorosilane (DCS) in H2. n-type doping using PH3 was also carried out and doping levels exceeding 1×1020/cm3 were obtained. However, abrupt doping pulses, as have been obtained for Si growth from DCS in the same temperature regime, were not achieved. In addition, PH3 was found to diminish the growth rate and degrade the crystal quality of the layers. The films grown from silane exhibited higher levels of oxygen at the interface between the epitaxial layer and the substrate than did films grown from DCS in the same temperature range. However, high quality films, free from extended defects, as determined by transmission electron microscopy (TEM), could still be achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107571
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  • 4
    Electronic Resource
    Electronic Resource
    Use of electron-beam charging for in-process inspection of silicide complementary metal-oxide-semiconductor gate electrode isolation (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 312-314 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inspection of complementary metal-oxide-semiconductor circuits by electron-beam charging is demonstrated. Isolation of the gate electrodes used in the actual circuits is verified. The inspection is done entirely without contact, without removing wafers from the clean room, and prior to metal and interlevel dielectric deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107922
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  • 5
    Electronic Resource
    Electronic Resource
    Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1479-1481 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dichlorosilane and germane were used to grow silicon-germanium alloys at temperatures as low as 550 °C at atmospheric pressure. The silicon-germanium alloy composition was varied over the range 15%–44%. Films containing high Ge mole fractions were grown at a temperature of 625 °C and below and exhibit smooth surface morphology. Silicon-germanium/silicon multilayers with abrupt heterointerfaces have been achieved. Selective growth of silicon-germanium on oxide patterned silicon wafers was also demonstrated. A significant feature of the selective deposition is the lack of faceting at the oxide sidewall, which has been commonly observed in high-temperature silicon growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105293
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