Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 1479-1481
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Dichlorosilane and germane were used to grow silicon-germanium alloys at temperatures as low as 550 °C at atmospheric pressure. The silicon-germanium alloy composition was varied over the range 15%–44%. Films containing high Ge mole fractions were grown at a temperature of 625 °C and below and exhibit smooth surface morphology. Silicon-germanium/silicon multilayers with abrupt heterointerfaces have been achieved. Selective growth of silicon-germanium on oxide patterned silicon wafers was also demonstrated. A significant feature of the selective deposition is the lack of faceting at the oxide sidewall, which has been commonly observed in high-temperature silicon growth.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105293
|
Location |
Call Number |
Expected |
Availability |