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High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure (1991)

Sedgwick, T. O. ; Agnello, P. D. ; Ngoc, D. Nguyen ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 1896-1898

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: High concentrations of electrically active phosphorus have been grown in Si epitaxial layers at 750 °C and below in an atmospheric pressure deposition system using PH3 and SiCl2H2 in H2. PH3 remarkably enhances the silicon deposition rate in the range 550–750 °C in contrast to previously reported doping studies using SiH4. Chemical concentrations as high as 2.5×1020 cm−3 with an electrical activity of 1×1020 cm−3 were obtained in layers that were free of defects by transmission electron microscopy. The doping level can be modulated between 1×1019 and 5×1016 cm−3 indicating that there are no complications due to dopant retention on sample or reactor wall surfaces. Emitter-base diodes formed in the epitaxial layers exhibited ideal forward and low-leakage reverse characteristics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.105066

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