Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 2121-2123
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The use of a liquid organic source for n-type doping in hydrogenated amorphous silicon (a-Si:H) is described. Tertiarybutylphosphine (TBP) vapor is added to silane in a rf glow discharge process to produce doped a-Si:H thin films. Impurity levels from parts per million to about 1% phosphorus have been incorporated into the film with this method. Measurements of dark conductivity, photoconductivity, conductivity activation energy, electron spin resonance, and sub-gap optical absorption of the TBP-doped films are compared to those published for films doped with phosphine.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.103917
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