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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial ferromagnetic MnAs thin films grown by molecular-beam epitaxy on GaAs: Structure and magnetic properties : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6278-6280 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied structural and magnetic properties of epitaxial MnAs thin films with various thicknesses (L=1.0–200 nm) on GaAs substrates. The MnAs thin films were grown at 200–250 °C on an As-rich disordered c(4×4) (001) GaAs surface by molecular-beam epitaxy (MBE). The growth direction of the MnAs was found to be along the [1¯100] axis of the hexagonal unit cell. X-ray spectra of the MnAs at room temperature have two peaks, indicating that the present MBE-grown MnAs films consist of the hexagonal ferromagnetic phase and orthorhombic paramagnetic phase. Magnetization measurements revealed that the MnAs thin films have perfectly square hysteresis characteristics with relatively high remnant magnetization Mr=300–567 emu/cm3 and low coercive field Hc=65–926 Oe, compared with those of epitaxial MnGa and MnAl thin films reported previously.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358304
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial orientation and magnetic properties of MnAs thin films grown on (001) GaAs: Template effects (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1964-1966 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied template effects in molecular beam epitaxy (MBE) of ferromagnetic MnAs thin films on (001) GaAs substrates. When As2 flux was first supplied without Mn flux on the (001) GaAs prior to the MnAs growth, the surface reconstruction was disordered c(4×4), a more As-rich surface than c(4×4). The growth direction of the MnAs thin film grown on this surface is [1¯100] and the easy magnetization axis was found to be along the [1¯1¯20] of MnAs and the [110] of GaAs. In contrast, when one monolayer of Mn was first deposited on the c(4×4) GaAs surface and then As2 flux was supplied to grow MnAs, the growth direction of the MnAs thin film was found to be mainly [1¯101], and the easy magnetization axis was along the [1¯1¯20] of MnAs and the [1¯10] of GaAs, 90° different with respect to the substrate. These results indicate the importance of the very first monolayer in controlling the epitaxial orientation and magnetic properties of epitaxial ferromagnetic MnAs thin films. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112831
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  • 3
    Electronic Resource
    Electronic Resource
    Polarized electroluminescence spectra of GaxIn1−xP/(Al0.6Ga0.4)0.5In0.5P quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3458-3460 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescence spectra of 80 A(ring) GaxIn1−xP/(Al0.6Ga0.4)0.5In0.5P quantum wells (QWs), with x=0.3, 0.4, 0.5, and 0.6, are examined. The polarization is anisotropic, and the light-hole (lh) and heavy-hole (hh) transitions are resolved at current densities between 1 A/cm2 and threshold. In the compressively strained (x=0.3, 0.4) QWs, the hh is ground state and transverse electric-mode emission dominates. The lh and hh band edges are reversed for the tensile-strained QW, however, and the emission is predominantly transverse magnetic. Near threshold, the bandfilling effect is most pronounced in the compressively strained QWs, suggesting a reduced in-plane hh effective mass. For the most highly compressed QW (x=0.3, λ=707 nm), the threshold current density is 190 A/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109048
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  • 4
    Electronic Resource
    Electronic Resource
    Doping effect of viologen on photoconductive device made of poly (p-phenylenevinylene) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2871-2873 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the photovoltaic properties of the donor–acceptor composite system of poly (p-phenylenevinylene) (PPV) and viologen. We observed the significant enhancement of photocurrent with increasing the doping ratio of viologen. The maximum photocurrent of viologen-doped PPV was nine times as high as that of the pristine PPV. The maximum quantum yield and photosensitivity are 13% (electron/photon) and 0.05 A/W, respectively, at low bias voltage (−2 V). The increase of photocurrent is explained with the efficient charge separation that resulted from the transfer of photoexcited electrons from PPV to viologen. The mixture of PPV and viologen can be used as a sensitive photodiode material. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121486
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of cyclic process on the {100}-oriented texture growth of diamond film (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2184-2186 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The {100}-oriented texture growth of diamond film on (100) Si substrates (1×1 cm2) has been achieved by a three-step procedure (carburization→nucleation→growth) in a microwave- plasma-enhanced chemical vapor deposition (MPECVD) system. The surface morphology is found to be strongly affected by the cyclic process applied during the nucleation step. Furthermore, the density of {100}-oriented grains as well as the coverage area are enhanced by the application of the cyclic process merely during the nucleation step. We also observed the increase in the nucleation density by the cyclic process. This increase may be the origin for the increase in the density of the {100}-oriented grains. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117159
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  • 6
    Electronic Resource
    Electronic Resource
    Integration and electrical properties of diffusion barrier for high density ferroelectric memory (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 451-453 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reliable Ir diffusion barrier was prepared on polysilicon plugged substrate with a contact size of 0.6 μm. Using a Ti adhesion layer and stress-relief process, it was possible to integrate the Ir barrier into a high density 4 Mb ferroelectric random access memory device. After heat treating sol-gel derived Pb(Zr1−xTix)O3 (PZT) films at 700 °C, the Ir barrier contact displayed an ohmic behavior and showed a low resistance of 130 Ω per contact in 1k serial contact array. The PZT films on Pt/IrO2/Ir poly-plugged substrate exhibited excellent ferroelectric properties such as remnant polarization and coercive voltage of 25 μC/cm2 and 1.15 V, respectively. Auger depth profile and transmission electron microscopy analyses confirmed that no appreciable oxidation was formed between the Ir barrier and the polysilicon plug. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125784
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  • 7
    Electronic Resource
    Electronic Resource
    DYNAMIC LOT SIZING FOR A SINGLE-FACILITY MULTIPRODUCT PROBLEM IN A ROLLING-HORIZON ENVIRONMENT (1987)
    Oxford, UK : Blackwell Publishing Ltd
    Decision sciences 18 (1987), S. 0 
    Details
    ISSN: 1540-5915
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Notes: This paper considers a production planning model for a single-facility multiproduct problem where backlogging is not allowed. A planning-horizon theorem is derived. From that theorem, a forward algorithm for finding an optimal solution over a finite horizon and a procedure for selecting the first-period production in a rolling-horizon environment are developed. Computational results from a set of simulation experiments designed to investigate the cost effectiveness of the procedure demonstrate its effectiveness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1540-5915.1987.tb01521.x
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  • 8
    Electronic Resource
    Electronic Resource
    Novel method to generate ionic clusters within zeolites (1993)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 115 (1993), S. 12220-12221 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00078a093
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  • 9
    Electronic Resource
    Electronic Resource
    Substrate-dependent electrical properties of low-dose Si implants in GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4083-4088 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive electrical study of low-dose (1012−1013 cm−2) Si implants in both liquid-encapsulated Czochralski (LEC) grown undoped and horizontal Bridgman grown Cr-doped semi-insulating GaAs has been made using Hall measurements. The optimum annealing temperature is 850 °C, and an apparent electrical activation efficiency of 90% has been achieved with room-temperature implantation for both substrates. The carrier depth profiles are much broader and the peak concentrations are much lower than those expected according to the Lindhard–Scharff–Schiott (LSS) theory. Although the carrier profiles for both substrates agree with each other relatively well, the mobilities for the undoped substrates are significantly higher than those for the Cr-doped substrates at all low doses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335589
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  • 10
    Electronic Resource
    Electronic Resource
    Nested patterns of spatial diversity revealed for fish assemblages in a west European river (2005)
    Oxford, UK : Munksgaard International Publishers
    Ecology of freshwater fish 14 (2005), S. 0 
    Details
    ISSN: 1600-0633
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract –  The longitudinal distribution of fish assemblages across a large west European river basin, the Garonne river (south-west France) were investigated using a self-organising map. This nonlinear statistical method was employed to classify sampling sites according to their species composition. We found three main nested patterns in an aggregated hierarchy: a replacement and succession of species along a gradient without defined boundaries, four main zones of fish assemblages and an upstream-downstream shift of fish communities. We suggest that fish assemblages are too complex to be identified with a single species as in the zonation model, and that the diversity patterns found might be part of the same ecological process influencing fish assemblages on different spatial scales. Thus, discrepancies in the analysis of longitudinal patterns of fish communities in streams may have been basically a matter of local conditions and of conceptual perception.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-0633.2005.00096.x
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