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  • 1
    Electronic Resource
    Electronic Resource
    Kinetics of the dissociation of indium phosphide under vacuum (1982)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 86 (1982), S. 3246-3250 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100213a034
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  • 2
    Electronic Resource
    Electronic Resource
    Defects and ion redistribution in implant-isolated GaAs-based device structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6580-6586 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implant isolation of thick GaAs based epitaxial structures using either multiple energy keV ions or a single MeV ion implantation is becoming more popular for devices such as heterojunction bipolar transistors or quantum well lasers. We report examples of both types of isolation schemes, using keV F+ and H+ ions, or MeV O+ ions. Post-implant annealing at temperatures in the range 500–600 °C is needed to maximize the resistivity of the implanted material, but this causes redistribution of both F and H (but not O) and accumulation of hydrogen at strained or ion-damaged interfaces. The amount of hydrogen motion is sufficient to cause concerns about dopant passivation occurring in the initially masked, active regions of the devices. The resistance of the ion-implanted regions is stable for periods of ≥50 days at 200 °C, and is controlled by deep level point defects which pin the Fermi level near mid gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355096
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  • 3
    Electronic Resource
    Electronic Resource
    GaAs surface reconstruction obtained using a dry process (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2035-2037 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report attaining Ga-terminated (4×2) surface reconstruction on virgin GaAs substrates using a completely dry process at temperatures below the oxide sublimation temperature and without group V overpressure. The native oxides are removed with an electron cyclotron resonance hydrogen plasma treatment, followed by annealing at 500 °C in ultrahigh vacuum, which yields a reconstructed surface suitable for epitaxial overgrowth. Characterization by secondary ion mass spectroscopy and transmission electron microscopy reveals the complete removal of O, reduced C, and high structural order at the epilayer/substrate interface when this preparation method is used before molecular beam epitaxy. Annealing the substrate at a lower temperature yields a nonreconstructed surface possessing significant impurity concentrations, and leads to dislocation defects at the epilayer/substrate interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353148
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  • 4
    Electronic Resource
    Electronic Resource
    Atomic ordering in InGaAsP and InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4118-4124 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a systematic study of atomic ordering in InGaAsP and InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition. InGaAsP lattice matched to InP, grown in a temperature range of 625–650 °C, reveals atomic ordering on the (111) plane (variant I) and the (11¯1¯) plane (variant II) of the group III sublattice. The extent of atomic ordering increases with decreasing growth temperature and increasing In to Ga ratio. No orderings are observed in InGaAsP grown at 700 °C or in In0.53Ga0.47As lattice matched to InP at all our growth temperatures, in contrast to the commonly believed occurrence of maximum ordering at 1/1 In to Ga ratio. The facts that these conditions differ significantly from the reported conditions for InGaAsP grown by other techniques strongly suggests that the atomic ordering formation is controlled by the surface kinetics and growth environment, i.e., chemistry at the reactive gas-solid surface, fluid dynamics of the reactive gases, and growth temperature, rather than the composition and growth temperature. A fine structure observed in the superspots associated with the atomic ordering in the electron diffraction pattern indicates a possible superlattice structure formed by alternating variant I and variant II ordered layers. Misfit strain as well as sulfur dopant are shown to have no effect on the atomic ordering. Zinc dopant, however, totally eliminates the atomic ordering and shifts the energy band gap to a larger band gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352218
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  • 5
    Electronic Resource
    Electronic Resource
    13.4% efficient thin-film CdS/CdTe solar cells (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7608-7612 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cadmium telluride is a promising thin-film photovoltaic material as shown by the more than 10% efficient CdS/CdTe heterojunction solar cells. In this work, thin-film CdS/CdTe solar cells have been prepared using CdS films grown from an aqueous solution and p-CdTe films deposited by close-spaced sublimation (CSS). The properties of CdS films deposited from an ammonical solution of a Cd-salt, an ammonium salt, and thiourea have been controlled by optimizing the temperature and composition of the solution. The solution-grown CdS films have a high photoconductivity ratio, and its optical transmission is superior to that of vacuum evaporated CdS films. The properties of p-CdTe films deposited by CSS have been optimized by controlling the temperature and composition of the source material, and the substrate temperature. The properties of CdS/CdTe heterojunctions have been studied; junction photovoltage spectroscopy is used for the qualitative comparison of junction characteristics. Solar cells of 1-cm2 area with an AM 1.5 efficiency of 13.4% are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349717
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature dependence of the resistance in the Pt/Ti nonalloyed ohmic contacts to p-InAs induced by rapid thermal processing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4141-4150 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the resistance in the Pt(60 nm)/Ti(50 nm) nonalloyed ohmic contacts to p-InAs (Zn doped 1×1018 to 1×1019 cm−3 ) induced by rapid thermal processing in the temperature range of 300–600 °C was studied. The ohmic nature of these contacts was attributed to both the low metal-semiconductor interfacial barriers and to the heavily doped semiconductor contacting layers. A phenomenological model was used to fit the measured temperature dependence contact resistance. The results indicated conversion from thermionic emission as the dominant carriers transport mechanism across the interfacial barrier for the as-deposited sample to a combination of thermionic and field emission mechanism for the heat-treated samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346256
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  • 7
    Electronic Resource
    Electronic Resource
    On the effect of the barrier widths in the InAs/AlSb/GaSb single-barrier interband tunneling structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3451-3455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the interband tunneling current on AlSb barrier widths is studied in the InAs/AlSb/GaSb single-barrier diode structures. The experimental results show that the peak current density displays an exponential dependence on the barrier width. The Wentzel-Kramers-Brillouin approximation combined with the k⋅p two-band model were used in analyzing the energy level in the AlSb barrier through which the peak tunneling currents occur. The energy level thus obtained (0.48±0.10 eV above the valence band edge of the AlSb) agrees with the valence-band offset (0.40±0.15 eV) between the AlSb and the GaSb obtained by x-ray photoemission measurement reported by Gualtieri et al. [Appl. Phys. Lett. 49, 1037 (1986)]. By adjusting the barrier width properly, we obtained a high peak current density of 24 kA/cm2 (with a peak-to-valley ratio of 1.4) and a high peak-to-valley ratio of 4.5 (with a peak current density of 3.5 kA/cm2) at room temperature. In addition, the peak-current voltages for different AlSb barrier widths were calculated and compared with the measured results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346355
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  • 8
    Electronic Resource
    Electronic Resource
    Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4095-4097 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the doping incorporation and activation of InP growth using metalorganic chemical vapor deposition on 〈100(approximately-greater-than), 〈311(approximately-greater-than)B, and 〈110(approximately-greater-than) InP substrates. Effects of orientation, growth temperature, and V/III fluxes were studied. The dopants used were Zn from dimethylzinc [(CH3)2Zn] and diethylzinc [(C2H5)2Zn], S from hydrogen sulfide [H2S], Si from silane [SiH4], and Sn from tetraethyltin [(C2H5)4Sn]. The incorporation and activation of the p-type dopant Zn are elevated on the 〈311(approximately-greater-than)B and 〈110(approximately-greater-than) planes, while the incorporation is suppressed for the n-type dopants (S, Si, and Sn). The n-type dopant Sn has similar incorporation and activation on the various substrate orientations studied. Anomalous Zn doping on the higher order planes 〈311(approximately-greater-than)B and 〈110(approximately-greater-than) lead to the Zn incorporation exceeding the solubility limit in InP. Incorporated Zn levels as high as 1.0×1019 cm−3 were measured, and the corresponding activated Zn level was as high as 5.4×1018 cm−3 on a 〈110(approximately-greater-than) InP substrate. Interdiffusion of the p-type dopant Zn into the S-doped n-type InP substrate is inhibited by a high S-doping level and segregates at the substrate–epilayer interface. If the S-doping level is lower than the Zn concentration, then Zn diffuses deep into the substrate at a uniform level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352839
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  • 9
    Electronic Resource
    Electronic Resource
    Semiconductor laser damage due to human-body-model electrostatic discharge (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1510-1520 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various types of InP-based semiconductor lasers, Fabry–Perot (FP), and distributed feedback (DFB), in different wavelength regions of 1.3, 1.48, and 1.55 μm have been subjected to human-body-model electrostatic discharge (ESD) testing. The reverse V-I characteristics of these diode lasers were found to be generally most sensitive in detecting ESD damage than the forward characteristics (e.g., threshold current) of the laser. The laser ESD failure voltages were much lower for the reverse than the forward polarity and DFB lasers were found to be more vulnerable to ESD than FP lasers. The failure mechanism was found to be due to localized melting—a thermal effect—in both polarities of ESD testing. We also report the study of the latent ESD effects on the long-term aging rates of semiconductor lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354850
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  • 10
    Electronic Resource
    Electronic Resource
    Films and junctions of cadmium zinc telluride (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5635-5640 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cadmium telluride (CdTe) and zinc telluride (ZnTe), direct gap semiconductors with room-temperature band gap energies of 1.45 and 2.25 eV, respectively, form a continuous series of solid solutions (Cd1−xZnxTe). The band gap energy of Cd1−xZnxTe can be tailored in the 1.45–2.25 eV range. Cd1−xZnxTe with band gap energy of 1.65–1.75 eV is suitable as the upper member of a two-cell tandem structure for the photovoltaic conversion of solar energy. In this work, polycrystalline films of Cd1−xZnxTe have been deposited on glass, CdS/SnO2:F/glass, and Cd1−xZnxS/SnO2:F/glass substrates at 400 °C by the reaction of dimethylcadmium (DMCd), diethlyzinc (DEZn), and diisopropyltellurium (DIPTe) in a hydrogen atmosphere. The composition of Cd1−xZnxTe films determined by wavelength dispersive spectroscopy and x-ray diffraction has been correlated with the band gap energy deduced from the junction photovoltage spectroscopy and optical transmission. The structural and electrical properties of Cd0.7Zn0.3Te (band gap energy 1.70 eV) films have been evaluated. Thin film Cd0.7Zn0.3Te/CdS and Cd0.7Zn0.3Te/Cd0.7Zn0.3S heterojunctions have been prepared and characterized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350495
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