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  • 1
    Digitale Medien
    Digitale Medien
    Purification and characterization of a colony stimulating factor from human lung (1978)
    s.l. : American Chemical Society
    Biochemistry 17 (1978), S. 3109-3116 
    Details
    ISSN: 1520-4995
    Quelle: ACS Legacy Archives
    Thema: Biologie , Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/bi00608a026
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  • 2
    Digitale Medien
    Digitale Medien
    The doping concentration dependence of zinc and tin in InGaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2211-2213 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In0.53Ga0.47As epitaxial layers doped with Zn and Sn were grown on InP (100) substrates by liquid-phase epitaxy with a 5 °C supersaturation temperature. The physical properties of the doped layers have been investigated. The peak energy of (D0,A0) pair band emission in Zn-doped InGaAs layers decreases with a linear slope of 0.7×10−8 eV cm as the cube root of net hole concentration is increased. In Sn-doped layers, the photoluminescent peak wavelength decreases with increasing electron concentration due to the Burstein–Moss shift and band-tailing effects. The relative peak intensity deteriorates in highly doped layers due to the formation of complex precipitates.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342499
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  • 3
    Digitale Medien
    Digitale Medien
    Measurements on standing waves in GaAs coplanar waveguide at frequencies up to 20.1 GHz by electro-optic probing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 419-421 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the experimental results of the standing waves in GaAs coplanar waveguides at frequencies up to 20.10 GHz with different terminations (open, short, and 50 Ω) by a new electro-optic probing technique. The effective refractive indices from 4.11 to 20.10 GHz are presented and compared with theoretical values. Dispersion of coplanar waveguide in that frequency range is shown to be negligible.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341444
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  • 4
    Digitale Medien
    Digitale Medien
    Wavelength tuning and switching of a coupled distributed feedback and Fabry–Perot cavity laser (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 291-294 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present a theoretical analysis of a newly demonstrated semiconductor laser with coupled distributed feedback and Fabry–Perot (DFB-FP) cavities and show that three modes of operation are possible for such a laser. In mode-switched DFB mode, the wavelength can be switched between longitudinal modes on either side of the stopband. In coupled-cavity laser mode, there are successive mode hops inside the stopband. Finally, in continuously tunable distributed Bragg reflector mode, a wide wavelength tuning range (4.8 A(ring)) without mode hopping can be obtained. The analysis is general enough to be applied to any laser with a periodic waveguide section, and provides an understanding of the mechanisms and the limits of wavelength tuning in such lasers. This type of laser has very important applications in coherent optical communications.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.340292
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  • 5
    Digitale Medien
    Digitale Medien
    The doping concentration dependence of the zinc acceptor ionization energy in In0.49Ga0.51P (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3907-3908 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The doping concentration dependence of the zinc acceptor energy level in In0.49Ga0.51P has been studied and can be expressed as EA=45.75−8.20×10−6 P1/3 meV, where P is the zinc acceptor concentration in cm−3. The zinc-doped In0.49Ga0.51P epitaxial layers were grown on 〈100〉 oriented semi-insulating GaAs substrates which are in very good crystallinity with a lattice mismatch of only 0.26%.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.335610
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  • 6
    Digitale Medien
    Digitale Medien
    The fabrication of single heterojunction AlGaAs/InGaP electroluminescent diodes (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2541-2544 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High quality GaAs/AlxGa1−xAs/In0.5Ga0.5P single heterostructure electroluminescent devices have been fabricated by liquid-phase epitaxy. Three different compositions (x=0.45, 0.58, and 0.85) of AlxGa1−xAs layers were made to compare their properties. Diodes fabricated from these heterostructures have been characterized by electron beam induced current, electroluminescence, quantum efficiency, output power, and current-voltage measurements. Emission peak wavelengths and full width at half maximum values of the light emitting diodes are, respectively, 652.5, 654.4, and 652.8 nm, and 67, 67, and 75 meV. The peak wavelengths of the light emitting diode shift 6 meV towards the lower-energy side compared to the photoluminescent peak wavelength of the same electron concentration in the Te-doped In0.5Ga0.5P layer. For most light emitting diodes, output powers and efficiency are in the range of 50–100 μW and 0.062%–0.1%, respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339467
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  • 7
    Digitale Medien
    Digitale Medien
    Liquid-phase-epitaxial growth of In0.49Ga0.51P on (100) GaAs by a supercooling method (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1537-1541 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In1−xGaxP epitaxial layers were grown on (100) GaAs substrates by liquid-phase epitaxy using supercooling technique. The lattice mismatch normal to the wafer surface between In1−xGaxP layer and GaAs substrate varies linearly with the supercooled temperature of the growth solution. The composition-pulling phenomenon was not observed in this study. The growth rate, the intensity, and the full width at half maximum of the photoluminescent spectrum are also dependent on the supercooling temperature. It is shown that the narrowest full widths at half maximum of photoluminescent peak are 10.6 and 35 meV at 14 and 300 K, respectively, when ΔT is 6 °C, and the strongest intensity is occurred at ΔT=12–18 °C. Carrier concentrations of undoped epitaxial layers are in the range of 1016 cm−3 measured by capacitance-voltage method at 300 K and Hall method at 77 and 300 K. The optimum growth condition was then determined.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336087
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  • 8
    Digitale Medien
    Digitale Medien
    Very low threshold single quantum well graded-index separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2610-2612 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have succeeded in preparing 1.5 μm wavelength strained-layer graded-index separate confinement heterostructure (GRINSCH) InGaAs/InGaAsP single quantum well (SQW) injection lasers by chemical beam epitaxy (CBE). These lasers have extremely low threshold current density Jth of 170 A/cm2, internal quantum efficiency of 83%, and internal waveguide loss of 3.8 cm−1. To the best of our knowledge, these results represent the best values obtained thus far from long-wavelength InGaAs/InGaAsP quantum well injection lasers grown by any techniques. However, despite the recent rapid reduction in Jth, the threshold-temperature dependence remains poor (T0=45 K) even in these very low Jth GRINSCH SQW lasers.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104838
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  • 9
    Digitale Medien
    Digitale Medien
    InAs/AlSb/GaSb single-barrier interband tunneling diodes with high peak-to-valley ratios at room temperature (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3040-3043 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have fabricated an InAs/AlSb/GaSb single-barrier interband tunneling diode by molecular beam epitaxy. In this structure, a large tunneling current can be obtained by taking the advantage of the large heterojunction-conduction band to valence band overlap (0.15 eV) between InAs and GaSb which offers flexible designs of the AlSb barrier thickness and the doping concentrations. We have obtained a negative differential resistance with a peak-to-valley current ratio as high as 4.7 and a peak current density of 3.5 kA/cm2 at room temperature with a 1.5-nm-thick AlSb barrier. The current transport mechanism in this tunneling structure will be discussed according to the I-V characteristics as a function of temperature.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346396
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  • 10
    Digitale Medien
    Digitale Medien
    On the effect of the barrier widths in the InAs/AlSb/GaSb single-barrier interband tunneling structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3451-3455 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The dependence of the interband tunneling current on AlSb barrier widths is studied in the InAs/AlSb/GaSb single-barrier diode structures. The experimental results show that the peak current density displays an exponential dependence on the barrier width. The Wentzel-Kramers-Brillouin approximation combined with the k⋅p two-band model were used in analyzing the energy level in the AlSb barrier through which the peak tunneling currents occur. The energy level thus obtained (0.48±0.10 eV above the valence band edge of the AlSb) agrees with the valence-band offset (0.40±0.15 eV) between the AlSb and the GaSb obtained by x-ray photoemission measurement reported by Gualtieri et al. [Appl. Phys. Lett. 49, 1037 (1986)]. By adjusting the barrier width properly, we obtained a high peak current density of 24 kA/cm2 (with a peak-to-valley ratio of 1.4) and a high peak-to-valley ratio of 4.5 (with a peak current density of 3.5 kA/cm2) at room temperature. In addition, the peak-current voltages for different AlSb barrier widths were calculated and compared with the measured results.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346355
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