ISSN:
1618-2650
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Summary The concentration of various foreign atoms in the compositional semiconductor Hg1−xCdxTe (x=0.2) has been determined by atomic absorption spectroscopy (AAS) and SIMS. The first problem of interest included the control of In doping of the (Hg,Cd)Te-melt solution and the epitaxial layers grown by step-cooling method. On the basis of analytical results it was possible to estimate the distribution coefficient k for the incorporation of indium into Hg1−xCdxTe. A value of k=3.2 has been found. This distribution coefficient did not change in the concentration range of In from 1×1016 atoms to 1×1018 atoms cm−3 in the melt solution. A distribution coefficient of about 3.0 was also determined by PIXE investigations. The second investigation concerned the level of background impurities in the bulk of HgCdTe crystals. The concentrations of some fast acceptors like Cu and Ag were determined. In the case of Ag it was confirmed, that the p-carrier concentration is influenced by the impurity level of Ag.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00633560
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