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  • 1
    Electronic Resource
    Electronic Resource
    Strain and structural characterization of Zn1−xCdxSe laser structures grown on GaAs and InGaAs (001) substrates (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 81-88 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray reciprocal space mapping has been used to investigate the strain status of microgun-pumped blue and blue-green laser structures. The devices exploit graded-index, separate confinement Zn1−xCdxSe/ZnSe heterostructures grown on InGaAs or GaAs substrates by molecular-beam epitaxy. The location of the reciprocal lattice point of the ZnSe buffer layer within a normally forbidden region of reciprocal space indicates that the ZnSe buffer layer is unusually strained, with an appreciable biaxial tensile strain despite the smaller lattice parameter of the III–V substrate relative to ZnSe. We associate such a phenomenon with the presence of the highly strained laser structure coupled with preferential strain relaxation at the II–VI/III–V heterointerface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362775
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of thermal annealing on the photoluminescence from pseudomorphic Si1−yCy epilayers on Si (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2172-2174 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near band edge photoluminescence (PL) is observed from about 100-nm-thick pseudomorphic Si1−yCy epilayers, which were grown by molecular beam epitaxy on a Si substrate. Different pieces of one wafer were annealed at temperatures between 500 and 800 °C, and it is shown that annealing leads to increased PL intensities and reduced linewidths. The smallest achieved full width at half maximum was 8.6 meV. We also observe a blueshift of the PL lines after annealing, which does not correspond to the minor changes in the amount of substitutional carbon deduced from x-ray measurements. Temperature dependent PL measurements suggest that the recombination involves electrons localized at alloy fluctuations. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119372
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  • 3
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy of pseudomorphic silicon/carbon superlattices on silicon substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2630-2632 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the molecular beam epitaxy growth of superlattices where silicon layers with a thickness between 3 and 10 nm alternate with very thin carbon layers. High resolution x-ray diffraction reveals that the superlattices are of excellent crystalline quality and are pseudomorphic with respect to the silicon substrate. From a dynamical simulation of the diffraction spectra we conclude that the nominal carbon layers are in fact silicon–carbon alloys with a carbon content up to 50%. Given the large lattice mismatch of more than 10% of such an alloy to the silicon substrate, astonishingly thick superlattices with up to 100 periods can be grown without lattice relaxation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114318
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  • 4
    Electronic Resource
    Electronic Resource
    Self-assembled carbon-induced germanium quantum dots studied by grazing-incidence small-angle x-ray scattering (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3785-3787 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a structural investigation of buried C-induced Ge quantum dot multilayers grown on (001) Si by molecular-beam epitaxy. Using grazing-incidence small angle x-ray scattering, we determine the shape, the mean radius, height, and dot distance. The dot distribution is isotropic within the (001) interfaces, and no correlation of the dot positions along growth direction was found. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124179
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  • 5
    Electronic Resource
    Electronic Resource
    Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 955-957 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied multiple layers of self-organized InGaAs-islands grown on GaAs by x-ray diffraction reciprocal space mapping. We found an anisotropy of the dot spacing in [100] and [110] direction consistent with an ordering of the dots in a two-dimensional square lattice with main axes along the [100] direction and a lattice parameter of 55 nm. The nearly perfect vertical alignment (stacking) of the dots was deduced from the diffraction peak shape. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118463
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  • 6
    Electronic Resource
    Electronic Resource
    Strain and composition distribution in uncapped SiGe islands from x-ray diffraction (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1474-1476 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the strain and composition distribution in uncapped SiGe islands grown on Si (001) by x-ray diffraction. In order to be sensitive to the dot layer on the sample surface, and at the same time being able to measure in-plane strain and strain in growth direction, we utilized a scattering geometry at grazing incidence angles, but with high exit angles. The measured intensity distribution is compared to simulations based on the strain distribution calculated by a finite element method. Although pure Ge has been deposited during island growth by molecular beam epitaxy, the Ge composition varies from 0.5 at the island base to 1.0 at the top of the islands. Even at this top, the elastic relaxation reaches only about 50%. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392975
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  • 7
    Electronic Resource
    Electronic Resource
    Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3953-3955 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the vertical correlation properties of SiGe islands in a series of Si/SiGe multilayers using grazing incidence x-ray diffraction. The degree of island correlation is found to strongly depend on the thickness of the Si spacer layer separating subsequent SiGe layers. A comparison with results obtained from transmission electron microscopy demonstrates the feasibility of the x-ray diffraction method for the investigation of sample series, and an improved statistical accuracy of the obtained parameters: with x-ray diffraction, the statistical average of typically 106–107 island columns is obtained, compared to only few in the case of transmission electron microscopy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1333683
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  • 8
    Electronic Resource
    Electronic Resource
    High resolution x-ray diffraction studies of short-period CdTe/MnTe superlattices (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6120-6125 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the elastic properties of epitaxial MnTe layers using triple axis high resolution x-ray diffraction and reciprocal space mapping. A series CdTe/MnTe superlattices (SLs) grown by molecular beam epitaxy and nearly strain compensated, were deposited on [001] Cd1−xZnxTe substrates. In order to obtain the MnTe content of these SLs without an a priori knowledge of the elastic properties of cubic MnTe, annealing experiments were performed to interdiffuse the individual layers into a mixed Cd1−xMnx Te alloy layer. For a precise analysis of the data, it was found to be important to determine the in-plane strain of the superlattice layers using reciprocal space maps around symmetric and asymmetric reciprocal lattice points. The value for the Poisson ratio of zinc-blende MnTe was determined to be ν=C11/2C12=0.77±0.15. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364392
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  • 9
    Electronic Resource
    Electronic Resource
    Growth of partially strain-relaxed Si1-yCy epilayers on (100)Si (1998)
    Springer
    Applied physics 67 (1998), S. 147-150 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: 1-y Cy epilayers were grown by MBE on (100) Si single-crystal substrates either directly on a dislocation-free or on a highly dislocated Si buffer layer. The orientation of the epilayers and their strain status were measured by double-crystal X-ray diffraction. Cross sections were prepared for TEM investigations. Epitaxial layers of about 130 nm thickness and carbon contents up to [%at.]1.38 grown on top of dislocation-free 1-μm-thick Si buffer layers were fully strained. In TEM bright field images, no dislocations were found. In order to introduce a high dislocation density in the Si buffer layer, the native oxide on the substrate was only partially removed prior to growing the Si buffer. A Si1-yCy film grown on top of that highly dislocated buffer layer showed a partial stress relaxation (a∥=5.429 Å〈asi=5.431 Å). The large FWHM of transverse rocking scans through the Bragg reflection corresponding to the epilayer indicates a high defect density. TEM cross-section micrographs showed an extension of threading dislocations from the Si buffer layer into the Si1-yCy layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050752
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  • 10
    Electronic Resource
    Electronic Resource
    X-ray diffraction from quantum wires and quantum dots (1999)
    Springer
    Journal of materials science 10 (1999), S. 215-221 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract From the distribution of the scattered intensity in reciprocal space, information on the shape as well as on the strain distribution in nanostructured samples can be obtained. This is exemplified by applying this method to laterally patterned periodic Si/SiGe superlattices as well as to periodic SiGe dot arrays embedded in Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008952113611
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