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  • 1
    Publication Date: 2023-06-27
    Keywords: 72-516; 72-516F; Aluminium oxide; Deep Sea Drilling Project; DEPTH, sediment/rock; DRILL; Drilling/drill rig; DSDP; DSDP/ODP/IODP sample designation; Event label; Glomar Challenger; Instrumental neutron activation analysis (INAA); Leg72; Sample code/label; South Atlantic/CONT RISE
    Type: Dataset
    Format: text/tab-separated-values, 87 data points
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  • 2
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    PANGAEA
    In:  Supplement to: Hu, X; Wang, Yan-Long; Schmitt, Roman A (1988): Geochemistry of sediments on the Rio Grande Rise and the redox evolution of the South Atlantic Ocean. Geochimica et Cosmochimica Acta, 52(1), 201-207, https://doi.org/10.1016/0016-7037(88)90068-3
    Publication Date: 2023-06-27
    Description: Sediment samples (32) from DSDP Holes 516 and 516F, Leg 72 were subjected to INAA (instrumental neutron activation analysis). Thirty-two major, minor and trace elements were determined. Ce anomalies, Ce_a = Ce (obs.)/Ce* (interpolated between La and Nd and relative to the NASC (North American Shale Composite)) = Ce (obs.)/[1.44 La (obs.) + 0.66 Nd (obs.)], in the carbonate phase were obtained. Calculations indicate that the Ce anomaly changed from 0.80 (80 My), 0.68 (67 My) to 0.30 (56 My), 0.27 (39 My) and 0.12–0.43 (avg. 0.26) (15?0.3 My). The Ce anomaly change observed at ~55 My coincides with the Ce anomaly change at ~58 My in marine carbonates from the Walvis Ridge, Hole 525A. These changes are attributed to improved water circulation caused by either the widening of the north-south Atlantic passage, subsidence of the Rio Grande Rise or subsidence of the Romanche Fracture Zone. The ultimate driving force behind the Ce anomaly changes is related to the pH and pO2 of the seawater and also related to global circulation of bottom ocean water and transport of the external terrestrial input from riverine or/and aeolian sources.
    Keywords: 72-516; 72-516F; Deep Sea Drilling Project; DRILL; Drilling/drill rig; DSDP; Glomar Challenger; Leg72; South Atlantic/CONT RISE
    Type: Dataset
    Format: application/zip, 3 datasets
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  • 3
    Publication Date: 2023-07-10
    Keywords: 72-516F; Aluminium; Arsenic; Barium; Bromine; Caesium; Calcium; Cerium; Chlorine; Chromium; Cobalt; Deep Sea Drilling Project; DEPTH, sediment/rock; DRILL; Drilling/drill rig; DSDP; DSDP/ODP/IODP sample designation; Dysprosium; Epoch; Europium; Fraction; Glomar Challenger; Hafnium; Instrumental neutron activation analysis (INAA); Iron; Lanthanum; Leg72; Lutetium; Magnesium; Manganese; Neodymium; Potassium; Rubidium; Samarium; Sample code/label; Scandium; Sodium; South Atlantic/CONT RISE; Tantalum; Terbium; Thorium; Titanium; Uranium; Vanadium; Ytterbium; Zirconium
    Type: Dataset
    Format: text/tab-separated-values, 913 data points
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  • 4
    Publication Date: 2023-07-10
    Keywords: 72-516; Aluminium; Arsenic; Barium; Bromine; Caesium; Calcium; Cerium; Chlorine; Chromium; Cobalt; Deep Sea Drilling Project; DEPTH, sediment/rock; DRILL; Drilling/drill rig; DSDP; DSDP/ODP/IODP sample designation; Dysprosium; Epoch; Europium; Fraction; Glomar Challenger; Hafnium; Instrumental neutron activation analysis (INAA); Iron; Lanthanum; Leg72; Lutetium; Magnesium; Manganese; Neodymium; Potassium; Rubidium; Samarium; Sample code/label; Scandium; Sodium; South Atlantic/CONT RISE; Tantalum; Terbium; Thorium; Titanium; Uranium; Vanadium; Ytterbium; Zirconium
    Type: Dataset
    Format: text/tab-separated-values, 209 data points
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3981-3987 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to increase the crystallization speed and data transfer rate (DTR), a superlattice-like structure (SLL) was applied to the recording layer of phase change optical disks. Unlike the conventional phase change layer, the recording layer with the SLL structure consisted of alternating thin layers of two different phase change materials, i.e., GeTe and Sb2Te3. Although neither GeTe nor Sb2Te3 could be used as a phase change layer material for practical applications, present experimental results revealed that the phase change optical disk with the SLL structure demonstrated an excellent recording property that could meet practical recording requirements. X-ray photoelectron spectroscopy was employed to confirm that the SLL structure could be preserved after many times of melting and quenching. Dynamic properties of the optical recording disk with the SLL structure were investigated with a 1 T pulse duration of 8 ns and a constant linear velocity of 19 m/s. A clear eye pattern was observed. The carrier-to-noise ratio was about 58 dB and a DTR of 47 Mbit/s was achieved. The DTR would be as high as 140 Mbit/s if the blue light is used. It has been proven that the SLL structure is a useful means to increase the DTR of phase change optical recording disks. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 5006-5012 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of energetic electrons in periodic self-oscillations of a discharge plasma has been studied by measuring the spatiotemporal evolution of plasma potential, electron density, and electron velocity distribution function. It is found that the self-oscillation involves the instabilities of sheaths, propagation of a double layer and competition between the ionization, thermalization, and diffusion. The energetic electrons are the key factor which links these processes to form the oscillation cycle. The time interval of each phase in the cycle is estimated according to the physical process and the calculations are in agreement with experimental measurements. The study of the probe perturbation effect on the oscillations indicates that the length of the oscillation period is related to the amount of energetic electrons; the more energetic electrons, the shorter the period. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5221-5223 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Our neutron-powder-diffraction experiment revealed that URhSi crystallizes in the orthorhombic TiNiSi (space group Pnma) structure and orders ferromagnetically at low temperatures with the U magnetic moments of 0.11 μB aligned along the c axis. Anomalies in the temperature dependence of the magnetic susceptibility, specific heat and electrical resistivity indicate that URhSi orders below 9.5 K. The enhanced Cp/T value (extrapolated to 0 K) of 186 mJ/mol K2 can be partially reduced in magnetic fields, which indicates a considerable magnetic contribution even at very low temperatures. The ferromagnetic ground state is documented also by magnetization measurements at low temperatures. The high-field magnetization data obtained on oriented powder reveal a strong magnetocrystalline anisotropy. All the results obtained on polycrystalline samples classify URhSi as an itinerant 5f ferromagnet with very reduced U magnetic moments. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1783-1786 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved emission spectrum from the plasma produced by 1.06 μm, 10 ns pulsed-laser irradiation of titanium alloy targets in air at a flux of 9.3×109 W cm−2 was analyzed in the wavelength range of 2000–8800 A(ring). From the evolutions of the specific spectrum lines of N II, Ti I, and Fe I, the velocities of N+ ions and the excited neutral Ti and Fe atoms have been obtained using a time-of-flight diagnostic method. The electron temperatures were deduced using the relative emission intensities of N II and Fe I isolated spectrum lines, and an electron number density was determined from the Stark-broadened line of the N II line at wavelength λ=3995 A(ring). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: U2Pt2Sn is crystallizing in an ordered version (space group P42/mnm) of the tetragonal U3Si2 type of structure. Clear anomalies in the magnetic susceptibility, specific heat, and electrical resistivity around 15 K indicate that U2Pt2Sn orders antiferromagnetically below this temperature. As expected for an antiferromagnet, the susceptibility and specific heat anomalies are shifted to lower temperatures upon application of external magnetic field. The specific-heat coefficient γ=327 mJ/mol f.u. K2 remains unchanged in fields up to 5 T. The antiferromagnetic ground state of U2Pt2Sn can be concluded also from the metamagnetic transition around 22 T in the magnetization at 4.2 K and from magnetic reflections in the neutron-diffraction pattern at low temperatures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2498-2500 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of growing device-quality cubic GaN/GaAs(001) films by metal organic chemical vapor deposition has been demonstrated. The optical quality of the GaN films was characterized by room-temperature photoluminescence measurements, which shows a full width at half maximum of 46 meV. The structural quality of the films was investigated by transmission electron microscopy. There are submicron-size grains free from threading dislocations and stacking faults. More importantly, a cubic-phase GaN blue light-emitting diode has been fabricated. The device process, which is very simple and compatible with current GaAs technology, indicates a promising future for the blue light-emitting diode. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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