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  • 1
    Electronic Resource
    Electronic Resource
    Dynamic Heat Capacity of the Pd〈sub〉40〈/sub〉Ni〈sub〉10〈/sub〉Cu〈sub〉30〈/sub〉P〈sub〉20〈/sub〉 Amorphous Alloy by Temperature-Modulated Calorimetry (2001)
    s.l. ; Stafa-Zurich, Switzerland
    Journal of metastable and nanocrystalline materials Vol. 10 (Jan. 2001), p. 123-128 
    Details
    ISSN: 1422-6375
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/43/transtech_doi~10.4028%252Fwww.scientific.net%252FJMNM.10.123.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Extreme ultraviolet laser/time-of-flight mass spectra of Kr2 near Kr*(4d,5p′,6s) (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 4025-4035 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: New single-photon spectra of jet-cooled Kr2 between ∼98 700 and 99 900 cm−1 have been recorded with an extreme ultraviolet laser generated by four-wave sum-mixing in Xe gas. Molecular ions created by (1+1′) resonance enhanced multiphoton ionization, and daughter atomic ions created by excited state predissociation prior to ionization were mass dispersed and detected in a time-of-flight mass spectrometer. Analyses of the subsequent single isotopic spectra have resulted in vibrational numbering and constants for eight band systems of Kr2 that dissociate to Kr(1S0)+Kr*(4d,5p′,6s). Excited state bond lengths were estimated by Franck–Condon factor intensity simulations. When possible, electronic symmetry assignments for the states were established by correlation diagrams constructed from angular momentum arguments. Possible reasons are discussed for the deviations observed for the shape of many of the observed Rydberg state potential energy curves from their expected nonbonding form. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1308559
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  • 3
    Electronic Resource
    Electronic Resource
    The role of energetic electrons in self-oscillations of a discharge plasma (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 5006-5012 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of energetic electrons in periodic self-oscillations of a discharge plasma has been studied by measuring the spatiotemporal evolution of plasma potential, electron density, and electron velocity distribution function. It is found that the self-oscillation involves the instabilities of sheaths, propagation of a double layer and competition between the ionization, thermalization, and diffusion. The energetic electrons are the key factor which links these processes to form the oscillation cycle. The time interval of each phase in the cycle is estimated according to the physical process and the calculations are in agreement with experimental measurements. The study of the probe perturbation effect on the oscillations indicates that the length of the oscillation period is related to the amount of energetic electrons; the more energetic electrons, the shorter the period. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406134
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  • 4
    Electronic Resource
    Electronic Resource
    Integration of telomere sequences with the draft human genome sequence (2001)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 409 (2001), S. 948-951 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Telomeres are the ends of linear eukaryotic chromosomes. To ensure that no large stretches of uncharacterized DNA remain between the ends of the human working draft sequence and the ends of each chromosome, we would need to connect the sequences of the telomeres to the working draft sequence. ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35057180
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of temperature on ascospore germination and penetration of oilseed rape (Brassica napus) leaves by A- or B-group Leptosphaeria maculans (phoma stem canker) (2003)
    Oxford, UK : Blackwell Science Ltd
    Plant pathology 52 (2003), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Ascospores of both A-group and B-group Leptosphaeria maculans germinated at temperatures from 5 to 20°C on leaves of oilseed rape. Germination of ascospores of both groups started 2 h after inoculation and percentage germination reached its maximum about 14 h after inoculation at all temperatures. Both the percentage of A-/B-group ascospores that had germinated after 24 h incubation and germ tube length increased with increasing temperature from 5 to 20°C. Germ tubes from B-group ascospores were longer than those from A-group ascospores at all temperatures, with the greatest difference at 20°C. Hyphae from ascospores of both groups penetrated the leaves predominantly through stomata, at temperatures from 5 to 20°C. A-group ascospores produced highly branched hyphae that grew tortuously, whereas B-group ascospores produced long, straight hyphae. The percentage of germinated ascospores that penetrated stomata increased with increasing temperature from 5 to 20°C and was greater for A-group than for B-group L. maculans after 40 h incubation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3059.2003.00813.x
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  • 6
    Electronic Resource
    Electronic Resource
    Superlattice-like structure for phase change optical recording (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3981-3987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to increase the crystallization speed and data transfer rate (DTR), a superlattice-like structure (SLL) was applied to the recording layer of phase change optical disks. Unlike the conventional phase change layer, the recording layer with the SLL structure consisted of alternating thin layers of two different phase change materials, i.e., GeTe and Sb2Te3. Although neither GeTe nor Sb2Te3 could be used as a phase change layer material for practical applications, present experimental results revealed that the phase change optical disk with the SLL structure demonstrated an excellent recording property that could meet practical recording requirements. X-ray photoelectron spectroscopy was employed to confirm that the SLL structure could be preserved after many times of melting and quenching. Dynamic properties of the optical recording disk with the SLL structure were investigated with a 1 T pulse duration of 8 ns and a constant linear velocity of 19 m/s. A clear eye pattern was observed. The carrier-to-noise ratio was about 58 dB and a DTR of 47 Mbit/s was achieved. The DTR would be as high as 140 Mbit/s if the blue light is used. It has been proven that the SLL structure is a useful means to increase the DTR of phase change optical recording disks. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454222
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  • 7
    Electronic Resource
    Electronic Resource
    Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2832-2834 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a metal–insulator–semiconductor heterostructure field-effect transistor (MISHFET) using Si3N4 film simultaneously for channel passivation and as a gate insulator. This design results in increased radio-frequency (rf) powers by reduction of the current collapse and it reduces the gate leakage currents by four orders of magnitude. A MISHFET room temperature gate current of about 90 pA/mm increases to only 1000 pA/mm at ambient temperature as high as 300 °C. Pulsed measurements show that unlike metal–oxide–semiconductor HFETs and regular HFETs, in a Si3N4 MISHFET, the gate voltage amplitude required for current collapse is much higher than the threshold voltage. Therefore, it exhibits significantly reduced rf current collapse. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412591
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  • 8
    Electronic Resource
    Electronic Resource
    Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2169-2171 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of radio-frequency current collapse in GaN–AlGaN heterojunction field-effect transistors (HFETs) was investigated using a comparative study of HFET and metal–oxide–semiconductor HFET current–voltage (I–V) and transfer characteristics under dc and short-pulsed voltage biasing. Significant current collapse occurs when the gate voltage is pulsed, whereas under drain pulsing the I–V curves are close to those in steady-state conditions. Contrary to previous reports, we conclude that the transverse electric field across the wide-band-gap barrier layer separating the gate and the channel rather than the gate or surface leakage currents or high-field effects in the gate–drain spacing is responsible for the current collapse. We find that the microwave power degradation in GaN–AlGaN HFETs can be explained by the difference between dc and pulsed I–V characteristics. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1363694
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  • 9
    Electronic Resource
    Electronic Resource
    AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1339-1341 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors (MOS-HFETs) grown over insulating 4H–SiC substrates. We demonstrate that the dc and microwave performance of the MOS-HFETs is superior to that of conventional AlGaN/GaN HFETs, which points to the high quality of SiO2/AlGaN heterointerface. The MOS-HFETs could operate at positive gate biases as high as +10 V that doubles the channel current as compared to conventional AlGaN/GaN HFETs of a similar design. The gate leakage current was more than six orders of magnitude smaller than that for the conventional AlGaN/GaN HFETs. The MOS-HFETs exhibited stable operation at elevated temperatures up to 300 °C with excellent pinch-off characteristics. These results clearly establish the potential of using AlGaN/GaN MOS-HFET approach for high power microwave and switching devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290269
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  • 10
    Electronic Resource
    Electronic Resource
    Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2651-2653 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gated transmission line model pattern measurements of the transient current–voltage characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) and metal–oxide–semiconductor HFETs were made to develop a phenomenological model for current collapse. Our measurements show that, under pulsed gate bias, the current collapse results from increased source–gate and gate–drain resistances but not from the channel resistance under the gate. We propose a model linking this increase in series resistances (and, therefore, the current collapse) to a decrease in piezoelectric charge resulting from the gate bias-induced nonuniform strain in the AlGaN barrier layer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412282
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