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  • Institute of Physics  (56)
  • American Institute of Physics (AIP)  (14)
  • National Academy of Sciences  (14)
  • 1
    Electronic Resource
    Electronic Resource
    Solid state amorphization at the room temperature deposited Ir/Si interface (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1204-1208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The amorphous Ir–Si layer of several nanometers thick on Si(100)2×1 deposited at room temperature has been characterized by using both low energy electron diffraction (LEED) and synchrotron photoemission techniques. The double domain Si(100)2×1 LEED pattern disappeared when the deposited Ir onto Si(100) was higher than 1 ML. The ultrathin amorphous Ir–Si layer consisted of three different IrxSiy alloys, rather than a single homogeneous IrxSiy alloy as predicted by the conventionally used Gibbs free energy calculation in the solid state amorphization. The growth of the amorphous Ir–Si layer on Si(100) strongly depended on the interaction between Ir and Si(100) at the initial stage of Ir deposition. Three types of Ir–Si bonding formed on Si(100) at 1 ML Ir coverage and gradually evolved to be three different amorphous IrxSiy alloys. The growth mode of the amorphous Ir–Si layer was proposed to be the modified Stranski–Krastanov growth. The transition from layer-by-layer-like to island growth occurred at Ir coverage of ∼3 ML. The major amorphous IrxSiy alloy switched from Si to Ir rich when Ir coverage is over ∼3 ML. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430885
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  • 2
    Electronic Resource
    Electronic Resource
    Dependence of crystallinity on oxygen pressure and growth mode of La0.3Sr1.7AlTaO6 thin films on different substrates (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3707-3710 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of oxygen pressure on epitaxial quality of La0.3Sr1.7AlTaO6 (LSAT) films deposited by laser ablation on SrTiO3(100), LaAlO3(100), and MgO(100) substrates has been investigated. X-ray diffraction shows only (00l) peaks in the oxygen pressure range from 10−3 to 500 mTorr. However, the crystallinity of LSAT films is found to be sensitive to oxygen pressure and dependent on substrates. LSAT films on SrTiO3 have the narrowest full width at half maximum (FWHM) of 0.05° at 300 mTorr. The films on LaAlO3 exhibit a FWHM of 0.3° at 50–100 mTorr. On MgO substrate, significant improvement of crystallinity is achieved at 200–300 mTorr, but rocking curves give an FWHM of 0.70°–1.00° due to the large lattice mismatch between LSAT and MgO. Atomic force microscopy analyses demonstrate smooth LSAT surfaces without identified grains. Reflection high-energy electron diffraction studies suggest a two-dimensional growth mode for LSAT films on SrTiO3 and LaAlO3 and a three-dimensional growth mode for LSAT films on MgO. Cross-sectional high-resolution electron micrographs indicate that LSAT films on SrTiO3 and LaAlO3 have defect-free epitaxial structure and atomically flat interfaces. An 80 Å thick intermediate layer with partially disordering is observed between LSAT films and MgO substrates. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372404
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  • 3
    Electronic Resource
    Electronic Resource
    Structural study of undoped and doped Bi2Sr2CuO6 phases by transmission electron microscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2775-2777 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi-based superconducting phases have been studied by transmission electron microscopy. The strong one-dimensional modulations in undoped and Ce-doped monoclinic Bi2 Sr2 CuO6 (2201) samples are different from one another. We have found a new 2201 phase containing Pb and Ca with orthorhombic symmetry in nominal (Bi0.90 Pb0.10 )2 Sr2 CaCu2 O8 crystals. Its structure with space group Bbmb and two-dimensional modulation are analogous to those of the Pb-doped higher members of the structural series Bi2 Sr2 Can−1 Cun O2n+4 . Hence, this new orthorhombic rather than the monoclinic 2201 phase should be the first member of the structural series.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102371
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  • 4
    Electronic Resource
    Electronic Resource
    Direct high-resolution electron microscopy observation of nonunit-cell nucleation in the initial stage of high-Tc superconducting film growth (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1830-1832 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between the starting and ending atomic layers of YBa2Cu3O7−x and Bi2Sr2CaCu2O8 thin films is studied by high-resolution electron microscopy. Experimental results show that the starting atomic layer of the thin film is determined by surface chemistry and the interaction between the thin film and the substrate, while the ending layer of the thin film is thermodynamically determined by the high-Tc cuprate itself. Therefore, nonunit cell nucleation is often observed in certain cases. The surface atomic layers of YBa2Cu3O7−x and Bi2Sr2CaCu2O8 were found to be the CuO layer and single BiO layer, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113336
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of c-axis in-plane YBa2Cu4O8 thin films through in situ annealing of precursors deposited by hybrid plasma sputtering (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3014-3016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Processing for the growth of YBa2Cu4O8 (Y124) thin films has been investigated by dc 94.92 MHz hybrid plasma sputtering with in situ annealing. The amorphous precursor is found to be the best candidate for growing pure Y124 phase through in situ annealing. The Raman spectrum confirms the Y124 phase by presenting the modes at 250 and 604 cm−1 related to the double Cu-O chains. X-ray diffraction as well as transmission electron microscopy further show that the films are composed of grain with orthogonal c axes in the film plane. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112493
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  • 6
    Electronic Resource
    Electronic Resource
    Direct high-resolution electron microscopy observations of sputtered a-axis oriented YBa2Cu3O7 films prepared by a self-template method on SrTiO3 substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3334-3336 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A-axis oriented YBa2Cu3O7 films grown on a SrTiO3 substrate with and without the template layer have been studied by high-resolution electron microscopy. The self-template layer was found to be very effective to obtain highly crystalline a-axis oriented YBa2Cu3O7 film. A disordered cubic perovskite structure with a lattice parameter of 3.85 A(ring) was found in the template layer which could be a good seed for further growth of a-axis film. In the film without the self-template layer, YBa4Cu3Ox cubic perovskite with lattice parameter 4.08 A(ring) was observed to have grown at the interface as an island growth. Moreover, some faulted c-axis film at the very beginning of the template layer was observed even at the rather lower deposition temperature of 640 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111270
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  • 7
    Electronic Resource
    Electronic Resource
    High critical-current density of Nd(Ba,Nd)2Cu3O7−δ single crystals (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2406-2408 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the superconducting properties of Nd(Ba1−xNdx)2Cu3O7−δ (Nd123, x≈0.1) single crystals grown by the traveling-solvent floating-zone method under 0.1% O2 in Ar atmosphere. An anomalous peak effect in the magnetization hysteresis (M–B) loop is observed in the Nd123 single crystals as well as in the Nd123 bulk crystals prepared by the oxygen-controlled melt growth (OCMG) method. The critical current density (Jc) of the Nd123 single crystals is 70 600 A/cm2 in 1.0 T at 77 K for the applied field perpendicular to the a-b plane. Uniform flux density distribution with the same shape as the sample is observed in the field perpendicular to the a-b plane by the magneto-optical flux-density observation. Finely dispersed white regions in the dark-field image due to Nd substitutions for Ba are observed in the Nd123 matrix by the transmission electron microscopy. The high Jc value of the Nd123 single crystals in the applied field is explained by the field-induced pinning centers caused by the Nd–Ba substitutions in the Nd123 matrix. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114562
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  • 8
    Electronic Resource
    Electronic Resource
    Magneto-optical and high resolution electron microscopy studies of flux pinning at grain boundaries in Bi2Sr2CaCu2Ox crystals (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3680-3682 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the flux pinning behavior of Bi2Sr2CaCu2Ox multicrystalline samples using a magneto-optical flux observation method. When a magnetic field is applied parallel to the ab plane, we find low flux density regions at the intersections of small angle grain boundaries. The flux density distribution can be explained by considering both flux pinning at the small angle grain boundaries and the intrinsic pinning effect at the BiO layers. High resolution electron microscopy observations show that amorphous patches with columnar structure exist at the small angle grain boundaries (〈20°), while other defects such as misfit dislocations and distorted microstructures appear at general grain boundaries. The fact that flux pinning only occurs at small angle grain boundaries (〈20°) indicates that the columnar amorphous structures could act as flux pinning centers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114139
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  • 9
    Electronic Resource
    Electronic Resource
    Growth and superconductivity of c-axis in-plane aligned YBa2Cu3O7−x films fabricated by the self-template method (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3129-3131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In-plane aligned a-axis oriented and [110] oriented Y1Ba2Cu3O7−x (YBCO) films exhibiting different anisotropic ratio in resistivity were fabricated, respectively, on LaSrGaO4[100] and SrTiO3[110] substrates by the self-template method. The anisotropic properties of the a-axis films as studied by resistivity and thermoelectric power measurements are believed to reflect the anisotropy intrinsic to the YBCO system. The measured anisotropic properties of the a-axis films exhibiting anisotropy ratio (approximately-greater-than)8 in resistivity and of the as-deposited [110] films were found to be related to cracks and the rough surface of these films. Furthermore, high-resolution microscopy revealed that a-axis film growth by our self-template method is dependent on the kinetics of the deposition process. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112458
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  • 10
    Electronic Resource
    Electronic Resource
    Atomic structure and composition of the barrier in the modified interface high-Tc Josephson junction studied by transmission electron microscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2470-2472 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The atomic structure and composition of modified interface junctions which showed reproducible critical current Ic (Ic1σ〈8% for 100 junctions) are investigated by transmission electron microscopy. Transmission electron microscopic observations show the existence of a thin barrier (1–2 nm) homogeneously covering the ion milled edge of the base YBa2Cu3Oy film although there is no barrier deposition and annealing process. High-resolution electron microscopy images and energy dispersive x-ray analysis with a spot size of 1 nm indicates that the barrier is a Ba-based perovskite-like structure, (Y1−xCux)BaOy with x〈0.5. A thin amorphous layer whose composition deviates from YBa2Cu3Oy is formed due to the preferential sputtering of Cu. The amorphous layer recrystallizes into the nonequilibrium phase (Y1−xCux)BaOy after heating up to the deposition temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125051
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