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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1946-1947 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial GaAs films are grown by the close space vapor transport technique, using atomic hydrogen as the initial reactant. Measurements of concentration and mobility of majority carriers reveal that the grown films are n type, with donor concentrations ND≈1017 cm−3, and mobilities at 300 K of μn≈3600 cm2 V−1 s−1. The growth and etching rates versus inverse temperature plots show an Arrhenius dependence with an activation energy of 36 kcal mol−1 in both cases.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2004-2006 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time gallium arsenide field-effect transistors have been made using epitaxial layers grown by the close spaced vapor transport technique (CSVT). The layers were unintentionally doped and their free-carrier concentration was adjusted through the growth parameters to around 1017 cm−3. For the growth of the layers, water vapor was used as transporting gas. This transistor confirms the capability of the simplest and most inexpensive epitaxial technique (CSVT) for growing device quality gallium arsenide epitaxial layers.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3652-3654 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Close spaced vapor transport (CSVT) epitaxial layers have been grown under water vapor partial pressure p ranging from 5×10−2 to 5 mm Hg for source temperatures of 800 and 850 °C and a substrate temperature of 730 °C, using undoped high-purity GaAs as source material and 〈100〉 chromium doped high-resistivity GaAs as substrate. From Hall measurements, all layers were found to be n-type with a majority carrier concentration in the range of (2–3) ×1017 cm−3 and a mobility 3100–3600 cm2 V−1 s−1 as p varies from 5.0 to 5×10−2 mm Hg. Photoluminescence measurements show the following dominant recombination processes: an exitonic peak at 1.514 eV, a free band acceptor at 1.498 eV, a donor acceptor at 1.490 eV, and two peaks involving complexes at 1.47 and 1.42 eV. These peaks depend on the water vapor pressure: for low values of p only the exitonic peaks exist; as p increases the photoluminescence becomes less efficient until it disappears for p=5.0 mm Hg. This study shows that CSVT-GaAs epilayers grown under proper conditions have high quality and could be used for producing some electronic devices.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 10809-10817 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Field cycling nuclear magnetic resonance relaxometry was used to study the slow molecular dynamics in the nematics and isotropic phases and polyphasic region of the phase diagram in the thernary mixture: potassium laurate/1-decanol/water. The experiment has been performed over a broad range of Larmor frequencies (2×103−6.6×106 Hz). The first experimental evidence of director fluctuations in a micellar lyotropic nematic liquid crystal, studied by 1H spin-lattice relaxation rate, is reported. The results evidence that in the nematic mesophases, director fluctuations are responsible for the spin-lattice relaxation dispersion in the low Larmor frequency range ((approximately-less-than)105 Hz). By increasing the intermicellar water content, a crossover was found between a quasi-isotropic three-dimensional (3D) director fluctuation behavior and a two-dimensional (2D) pseudo-lamellar undulation fluctuation. In spite of the fact that no menatic phases of this micellar complex fluid are isotropic with respect to light scattering, they present spin-lattice relaxation profiles as driven by local director fluctuations. The polyphasic region, at lower temperatures, shows a quasinematic 3D director fluctuation behavior; meanwhile, the isotropic phase, at higher temperatures, presents 2D pseudo-lamellar undulation fluctuation modes. We conclude that the micelles, in the isotropic phase, preserve the pseudo-lamellar structure, already found in the nematic phases but forming nematic domains with the directors randomly oriented. In order to explain the higher frequency range ((approximately-greater-than)105 Hz), two relaxation mechanisms are assigned: (i) molecular reorientation by translational diffusion on the micellar surface and (ii) molecular exchange between the micelle and the bulk. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 1881-1885 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Nutation nuclear quadrupole resonance spectroscopy enables one to determine the asymmetry parameter on powder samples. The method relies on two-dimensional methodology: The first period is the duration of the radio frequency exciting pulse and the second dimension is the free-evolution period of the quadrupolar nucleus. Varying lengths of the radio frequency pulse induce an amplitude modulation of the free-induction decay signals which is characteristic of the anisotropic nutation frequency distribution. Fourier analysis along the first dimension provides a powder nutation line shape that allows determination of the electric field gradient tensor's asymmetry parameter. We describe the first application of two-dimensional phase-modulated spectroscopy to a quadrupolar nucleus at zero field. It is shown that a phase-modulated variant of the nutation spectroscopy is feasible in the pure quadrupole regime and it provides a gain in the signal-to-noise ratio compared to the amplitude-modulated method. © 1998 American Institute of Physics.
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  • 6
    Publication Date: 2015-03-27
    Description: We systematically investigate the annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films with thickness of 100 nm. We correlate the non-uniform residual stress obtained from grazing incidence x-ray diffraction measurements with the ferromagnetic resonance (FMR) linewidth due to effective field inhomogeneities measured from broadband ferromagnetic resonance absorption measurements. We also estimate the annealing temperature effect on the Gilbert and two-magnon scattering contributions to the total ferromagnetic resonance FMR linewidth. We show that the effective field inhomogeneities constitute the main contribution to the microwave linewidth, while this contribution is related to the non-uniform residual stress in the films which is reduced by thermal annealing.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 7
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