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Epitaxial GaAs growth using atomic hydrogen as the reactant (1994)

Silva-Andrade, F. ; Chávez, F. ; Gómez, E.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 1946-1947

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Epitaxial GaAs films are grown by the close space vapor transport technique, using atomic hydrogen as the initial reactant. Measurements of concentration and mobility of majority carriers reveal that the grown films are n type, with donor concentrations ND≈1017 cm−3, and mobilities at 300 K of μn≈3600 cm2 V−1 s−1. The growth and etching rates versus inverse temperature plots show an Arrhenius dependence with an activation energy of 36 kcal mol−1 in both cases.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.357651

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