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  • 2010-2014  (171)
  • 1995-1999  (79)
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  • 1
    Electronic Resource
    Electronic Resource
    Enhanced hydrogen desorption from Si sites during low-temperature Si1−xGex growth by disilane and solid-Ge molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6920-6922 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phenomenological model is proposed to explain quantitatively the interesting compositional dependence on the Ge incorporation rate during low-temperature growth of Si1−xGex by disilane and solid-Ge molecular beam epitaxy, based on enhanced hydrogen desorption from Si sites due to the presence of Ge atoms. The hydrogen desorption rate constant for disilane on Si sites is fitted to an exponential function of Ge incorporation rate and a possible physical explanation is discussed. Simulated results are in excellent agreement with experimental data. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370106
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial single crystal Fe16N2 films grown by facing targets sputtering : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5440-5442 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: α″-Fe16N2 single crystal films can be prepared successfully by facing targets sputtering directly onto NaCl(100) substrates in a mixture of argon and nitrogen gases. Both x-ray diffractometer and transmission electron microscope are employed to characterize the crystal structure of the films. The perfect electron diffraction patterns of α″-Fe16N2 single crystal in [1¯11], [011], and [001] directions can be distinctly observed by double tilting. These patterns confirm that the crystal structure of the films corresponds to a body-centered tetragonal (bct) lattice with the parameters of a=b=5.72 A(ring) and c=6.29 A(ring) . The x-ray diffraction patterns show that α″-Fe16N2 epitaxially grows on the NaCl(100) substrate with an orientation relationship α″-Fe16N2(001)(parallel)NaCl(001) and α″-Fe16N2[100](parallel)NaCl[100]. The saturation magnetization of the Fe16N2 films is around 2100−2300 emu/cc, which agrees well with the value reported by Sugita et al.. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361843
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  • 3
    Electronic Resource
    Electronic Resource
    Facing targets sputtered Fe-N gradient films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2596-2600 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-N gradient films were prepared with a facing targets sputtering system. During deposition, the nitrogen pressure increased linearly up to a value, which is called the "ultimate pressure.'' Composition profiles, microstructure, magnetic properties, and corrosion resistance of the films were investigated by various methods. The experimental results indicate that the Fe-N films possess some composition and structural gradients. The Fe concentration decreases from the substrate to the film surface from 100 to 66 at. %. The phases α‘-Fe16N2, γ'-Fe4N, ε-FexN(2〈x≤3) and ζ-Fe2N are present in the gradient films at different depths. Ms under the ultimate nitrogen pressure of 0.05 Pa has a value of 1803 emu/cc which is higher than that of bulk iron, this is attributed to the presence of Fe16N2. Increasing further the ultimate nitrogen pressure, Ms decreases monotonically. The corrosion resistance of the gradient film with higher nitrogen concentration near the surface is good enough for magnetic recording heads. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360119
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal evolution of carbon in annealed Co/C soft x-ray multilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1428-1436 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structures of the carbon sublayers in the annealed Co/C soft x-ray multilayers fabricated using a dual-facing-target sputtering system have been characterized by x-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy (RS). The results suggest that the structural variations in the carbon layers can be roughly divided into three stages, i.e. ordering, crystalline and grain growth stages. In the ordering stage with annealing temperatures below 400 °C, the upward shift of D and G lines in Raman spectra indicates that the amorphous carbon layers are changing from ones with bond-angle disorder and fourfold-bonding only to ones containing threefold-bonding. In the crystalline stage, the amorphous carbon layers in the as-deposited multilayers crystallize to graphite crystallites in the annealing temperature range of 500–600 °C. The rapid increase in the intensity ratio of D line to G line and dramatic decrease in linewidth further confirm this substantial structural change. In the grain growth stage, the specimens are annealed at temperatures higher than 700 °C. The decrease in the intensity ratio implies a growth in the graphite crystallite dimensions, which is consistent with the XRD and TEM results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363010
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence spectroscopy and the effective mass theory of strained (In,Ga)As/GaAs heterostructures grown on (112)B GaAs substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 843-848 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence characteristics of pseudomorphic In0.19Ga0.81As/GaAs quantum well structures grown on both the conventional (001) and the unconventional (112)B GaAs substrate are investigated. It is found that the emission spectra of the structures grown on the (112)B surface exhibit some spectral characteristics not observed on similar structures grown on the (001) surface. A spectral blue shift of the e→hh1 transition with increasing optical pump intensity is observed for the quantum wells on the (112) surface. This shift is interpreted to be evidence of a strain-induced piezoelectric field. A second spectral feature located within the band gap of the In0.19Ga0.81As layer is also observed for the (112) structure; this feature is thought to be an impurity-related emission. The expected transition energies of the quantum well structures are calculated using the effective mass theory based on the 4×4 Luttinger valence band Hamiltonian, and a related strain Hamiltonian. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359009
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  • 6
    Electronic Resource
    Electronic Resource
    Red and infrared side by side semiconductor quantum well lasers integrated on a GaAs substrate (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1793-1795 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report red and infrared quantum well (QW) semiconductor lasers integrated on a GaAs substrate by etching and regrowth. A separate confinement heterostructure infrared laser containing an In0.15Al0.15Ga0.7As/Al0.4Ga0.6As QW with AlInP cladding layers was grown on a GaAs substrate. The wafer was then patterned with stripes of etch masks and was etched back to the substrate. A Ga0.4In0.6P/(AlGa)0.5In0.5P QW separate confinement heterostructure laser was subsequently grown side by side with the infrared laser structure. Independently addressable dual-wavelength lasers of 50 μm spacing were fabricated by forming 4 μm wide buried ridge waveguides. The dual-wavelength lasers operated in threshold currents of 10 mA at a peak wavelength of 835 nm and 20 mA at a peak wavelength of 670 nm.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122284
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  • 7
    Electronic Resource
    Electronic Resource
    Dual-wavelength AlGaAs/GaAs laser by selective removal of a quantum well in an asymmetric dual quantum well structure (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 284-286 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The longer-wavelength quantum well in an AlGaAs/GaAs asymmetric dual quantum well laser structure was selectively removed by localized intermixing. High Si doping on each side of the longer-wavelength well caused intermixing during an anneal under a SiNx cap, while leaving the other nearby well intact. During an anneal under an exposed GaAs surface layer, both quantum wells remained intact. By patterning the surface with alternating SiNx and exposed GaAs, the longer-wavelength quantum well was selectively intermixed. Integrated broad area lasers were fabricated with threshold current density and external quantum efficiency of 260 A/cm2 and 30%/facet at a wavelength of 751 nm in capped regions and 195 A/cm2, 32%/facet at 824 nm in the uncapped regions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116060
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  • 8
    Electronic Resource
    Electronic Resource
    Laterally oxidized GaInP/AlGaInP quantum well visible laser diodes (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2710-2712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High efficiency, low threshold visible AlGaInP/GaInP laser diodes using a buried AlAs native oxide for carrier and optical confinement are described. The lasers incorporate a thin AlAs layer in the upper cladding region, which when laterally wet oxidized, forms a narrow aperture. The lasers exhibited modest performance under continuous wave (cw) operation. Low temperature (400 °C) post-fabrication annealing was shown to dramatically improve the device characteristics. The lasers operate with room temperature cw threshold currents of 20 mA with external differential quantum efficiencies of 27% per facet (0.25 W/A per facet) for an uncoated 625-μm-long, 3.5-μm-wide device. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366091
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  • 9
    Electronic Resource
    Electronic Resource
    Polarization rotation modulator in a strained [110]-oriented multiple quantum well (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2885-2887 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The inherent optical anisotropy of a strained [110]-oriented multiple quantum well structure is used to make an optically addressed light modulator based on polarization rotation. The anisotropy of the multiple quantum well absorption coefficient for orthogonal polarizations causes rotation of the plane of polarization of light passing through the structure. By partially bleaching the quantum well exciton, the amount of polarization rotation is changed, and therefore modulation of the amplitude of the transmitted beam is achieved. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113462
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  • 10
    Electronic Resource
    Electronic Resource
    Differential Al–Ga interdiffusion in AlGaAs/GaAs and AlGaInP/GaInP heterostructures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3597-3599 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion of Al and Ga in Al0.4Ga0.6As/GaAs and Al0.3Ga0.2In0.5P/Ga0.6In0.4P quantum wells has been investigated by measuring the photoluminescence of samples annealed at temperatures from 850 to 1065 °C with and without an SiO2 cap. At 1000 °C under an SiO2 cap, the Al–Ga interdiffusion coefficient is found to be at least two orders of magnitude larger for an AlGaAs/GaAs quantum well compared to an AlGaInP/GaInP quantum well within the same sample. By comparing calculated photoluminescence shifts with measured values, an activation energy of 4.5 eV is found for the Al–Ga interdiffusion in an AlGaAs/GaAs quantum well under an SiO2 cap. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113799
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