Publication Date:
1995-01-01
Description:
Transport in one- and two-dimensional semiconductor device structures is considered using a set of quantum corrected hydrodynamic equations. Simple one-dimensional simulations demonstrate the need to include quantum effects in structures with sharp interfaces. Application to a two-dimensional quantum well HEMT structure is then considered. A brief discussion of the computational procedure is also presented.
Print ISSN:
1065-514X
Electronic ISSN:
1563-5171
Topics:
Electrical Engineering, Measurement and Control Technology