Publication Date:
2014-04-05
Description:
The uniform growth of single-crystal graphene over wafer-scale areas remains a challenge in the commercial-level manufacturability of various electronic, photonic, mechanical, and other devices based on graphene. Here, we describe wafer-scale growth of wrinkle-free single-crystal monolayer graphene on silicon wafer using a hydrogen-terminated germanium buffer layer. The anisotropic twofold symmetry of the germanium (110) surface allowed unidirectional alignment of multiple seeds, which were merged to uniform single-crystal graphene with predefined orientation. Furthermore, the weak interaction between graphene and underlying hydrogen-terminated germanium surface enabled the facile etch-free dry transfer of graphene and the recycling of the germanium substrate for continual graphene growth.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Lee, Jae-Hyun -- Lee, Eun Kyung -- Joo, Won-Jae -- Jang, Yamujin -- Kim, Byung-Sung -- Lim, Jae Young -- Choi, Soon-Hyung -- Ahn, Sung Joon -- Ahn, Joung Real -- Park, Min-Ho -- Yang, Cheol-Woong -- Choi, Byoung Lyong -- Hwang, Sung-Woo -- Whang, Dongmok -- New York, N.Y. -- Science. 2014 Apr 18;344(6181):286-9. doi: 10.1126/science.1252268. Epub 2014 Apr 3.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon 440-746, Korea.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/24700471" target="_blank"〉PubMed〈/a〉
Print ISSN:
0036-8075
Electronic ISSN:
1095-9203
Topics:
Biology
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Chemistry and Pharmacology
,
Computer Science
,
Medicine
,
Natural Sciences in General
,
Physics
