Publication Date:
2009-12-08
Description:
We have formed compositionally abrupt interfaces in silicon-germanium (Si-Ge) and Si-SiGe heterostructure nanowires by using solid aluminum-gold alloy catalyst particles rather than the conventional liquid semiconductor-metal eutectic droplets. We demonstrated single interfaces that are defect-free and close to atomically abrupt, as well as quantum dots (i.e., Ge layers tens of atomic planes thick) embedded within Si wires. Real-time imaging of growth kinetics reveals that a low solubility of Si and Ge in the solid particle accounts for the interfacial abruptness. Solid catalysts that can form functional group IV nanowire-based structures may yield an extended range of electronic applications.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Wen, C-Y -- Reuter, M C -- Bruley, J -- Tersoff, J -- Kodambaka, S -- Stach, E A -- Ross, F M -- New York, N.Y. -- Science. 2009 Nov 27;326(5957):1247-50. doi: 10.1126/science.1178606.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉School of Materials Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/19965471" target="_blank"〉PubMed〈/a〉
Print ISSN:
0036-8075
Electronic ISSN:
1095-9203
Topics:
Biology
,
Chemistry and Pharmacology
,
Computer Science
,
Medicine
,
Natural Sciences in General
,
Physics
