Publication Date:
2007-06-30
Description:
The unique band structure of graphene allows reconfigurable electric-field control of carrier type and density, making graphene an ideal candidate for bipolar nanoelectronics. We report the realization of a single-layer graphene p-n junction in which carrier type and density in two adjacent regions are locally controlled by electrostatic gating. Transport measurements in the quantum Hall regime reveal new plateaus of two-terminal conductance across the junction at 1 and 32 times the quantum of conductance, e(2)/h, consistent with recent theory. Beyond enabling investigations in condensed-matter physics, the demonstrated local-gating technique sets the foundation for a future graphene-based bipolar technology.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Williams, J R -- Dicarlo, L -- Marcus, C M -- New York, N.Y. -- Science. 2007 Aug 3;317(5838):638-41. Epub 2007 Jun 28.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉School of Engineering and Applied Science, Harvard University, Cambridge, MA 02138, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/17600183" target="_blank"〉PubMed〈/a〉
Print ISSN:
0036-8075
Electronic ISSN:
1095-9203
Topics:
Biology
,
Chemistry and Pharmacology
,
Computer Science
,
Medicine
,
Natural Sciences in General
,
Physics
