Publication Date:
2011-02-17
Description:
Author(s): R. N. Kini, A. J. Ptak, B. Fluegel, R. France, R. C. Reedy, and A. Mascarenhas We studied the effect of Bi incorporation on the hole mobility in the dilute bismide alloy GaAs_{1-x} Bi_{x} using electrical transport (Hall) and photoluminescence (PL) techniques. Our measurements show that the hole mobility decreases with increasing Bi concentration. Analysis of the temperature-d... [Phys. Rev. B 83, 075307] Published Wed Feb 16, 2011
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics