Publication Date:
2018-08-04
Description:
Author(s): Konstantin Klyukin, L. L. Tao, Evgeny Y. Tsymbal, and Vitaly Alexandrov Recent experimental results have demonstrated ferroelectricity in thin films of SrTiO 3 induced by antisite Ti Sr defects. This opens a possibility to use SrTiO 3 as a barrier layer in ferroelectric tunnel junctions (FTJs)—emerging electronic devices promising for applications in nanoelectronics. Here ... [Phys. Rev. Lett. 121, 056601] Published Fri Aug 03, 2018
Keywords:
Condensed Matter: Electronic Properties, etc.
Print ISSN:
0031-9007
Electronic ISSN:
1079-7114
Topics:
Physics