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Ratchet Effect in Partially Gated Multifinger Field-Effect Transistors (2018)

G. Rupper, S. Rudin, and M. S. Shur

American Physical Society (APS)

In: Physical Review Applied

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Publication Date: 2018-06-09

Description: Author(s): G. Rupper, S. Rudin, and M. S. Shur In the drive for terahertz-frequency technology, a spatial phase shift between a THz near field and a periodically modulated two-dimensional electron gas dramatically enhances the detection responsivity of a multigate “ratchet” structure, by breaking its symmetry. In high-mobility structures the response exhibits a plasmonic peak; finite ratchet structures also present such peaks, at lower plasmonic frequencies, corresponding to the wavelengths determined by overall structure length. These results are important for the modeling, design, and optimization of very sensitive sub-THz and THz plasmonic detectors, modulators, mixers, phase shifters, and sources. [Phys. Rev. Applied 9, 064007] Published Fri Jun 08, 2018

Electronic ISSN: 2331-7019

Topics: Physics

Published by American Physical Society (APS)

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