Publication Date:
2016-01-21
Description:
We report an investigation of normal-incidence GeSn-based p-i-n photodetectors (PDs) with a Ge 0.94 Sn 0.06 active layer grown using sputter epitaxy on a Ge(100) substrate. A low dark current density of 0.24 A/cm 2 was obtained at a reverse bias of 1 V. A high optical responsivity of the Ge 0.94 Sn 0.06 /Ge p-i-n PDs at zero bias was achieved, with an optical response wavelength extending to 1985 nm. The temperature-dependent optical-response measurement was performed, and a clear redshift absorption edge was observed. This work presents an approach for developing efficient and cost-effective GeSn-based infrared devices.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics