Publication Date:
2015-08-14
Description:
In this paper, we present a novel silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) microelectromechanical-system thermal wall shear stress sensor based on a tungsten hot-wire and a single thermopile. Devices were fabricated using a commercial 1- $mu text{m}$ SOI-CMOS process followed by a deep reactive ion etching back-etch step to release a silicon dioxide membrane, which mechanically supports and thermally isolates heating and sensing elements. The sensors show an electrothermal transduction efficiency of $50~mu text{W}$ /°C, and a very small zero flow offset. Calibration for wall shear stress measurement in air in the range of 0–0.48 Pa was performed using a suction type, 2-D flow wind tunnel. The sensors were found to be extremely sensitive, up to 4 V/Pa for low wall shear stress values. Furthermore, we demonstrate the superior signal-to-noise ratio (up to five times higher) of a single thermopile readout configuration compared with a double thermopile readout configuration (embedded for comparison purposes within the same device). Finally, we verify that the output of the sensor is proportional to the cube root of the wall shear stress and we propose an accurate semiempirical formula for its modeling.
Print ISSN:
1530-437X
Electronic ISSN:
1558-1748
Topics:
Electrical Engineering, Measurement and Control Technology
