Publication Date:
2015-08-13
Description:
Carrier-type control of spin-glass (cluster spin-glass) is studied in order to engineer basic magnetic semiconductor elements using the memory functions of spin-glass. A key of carrier-polarity control in magnetite is the valence engineering between Fe(II) and Fe(III) that is achieved by Ti(IV) substitution. Single phases of (001)-oriented Fe 3− x Ti x O 4 thin films have been obtained on spinel MgAl 2 O 4 substrates by pulsed laser deposition. Thermoelectric power measurements reveal that Ti-rich films ( x = 0.8) show p -type conduction, while Ti-poor films ( x = 0.6–0.75) show n -type conduction. The systematic Fe(III) reduction to Fe(II) followed by Ti(IV) substitution in the octahedral sublattice is confirmed by the X-ray absorption spectra. All of the Fe 3− x Ti x O 4 films ( x = 0.6–0.8) exhibit ferrimagnetism above room temperature. Next, the spin-glass behaviors of Ti-rich Fe 2.2 Ti 0.8 O 4 film are studied, since this magnetically diluted system is expected to exhibit the spin-glass behaviors. The DC magnetization and AC susceptibility measurements for the Ti-rich Fe 2.2 Ti 0.8 O 4 film reveal the presence of the spin glass phase. Thermal- and magnetic-field-history memory effects are observed and are attributed to the long time-decay nature of remanent magnetization. The detailed analysis of the time-dependent thermoremanent magnetization reveals the presence of the cluster spin glass state.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
