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Amphoteric doping of praseodymium Pr3+ in SrTiO3 grain boundaries (2015)

H. Yang, H. S. Lee, P. G. Kotula, Y. Sato, Y. Ikuhara and N. D. Browning

American Institute of Physics (AIP)

In: Applied Physics Letters

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Publication Date: 2015-03-27

Description: Charge compensation in rare-earth Praseodymium (Pr 3+ ) doped SrTiO 3 plays an important role in determining the overall photoluminescence properties of the system. Here, the Pr 3+ doping behavior in SrTiO 3 grain boundaries (GBs) is analyzed using aberration corrected scanning transmission electron microscopy. The presence of Pr 3+ induces structural variations and changes the statistical prevalence of the GB structures. In contrast to the assumption that Pr 3+ substitutes on the Sr site in the bulk, Pr 3+ is found to substitute on both Sr and Ti sites inside the GBs, with the highest concentration at the Ti sites. This amphoteric doping behavior in the boundary plane is further confirmed by first principles theoretical calculations.

Print ISSN: 0003-6951

Electronic ISSN: 1077-3118

Topics: Physics

Published by American Institute of Physics (AIP)

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