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    Publication Date: 2014-12-18
    Description: Author(s): S. Buvaev, S. Ghosh, K. Muttalib, P. Wölfle, and A. Hebard This paper provides an experimental description and theoretical explanation of how disorder affects electronic transport in antiferromagnetic thin films. The authors find a quantum correction to the conductivity which survives to high disorder strength because of a high rate of inelastic scattering of electrons off of gapped antiferromagnetic spin waves. The data provide first-time estimates of the spin-wave energy gap and exchange energy derived solely from transport measurements. The focus on the unexplored effect of antiferromagnetism on electronic transport provides new perspectives on the role of electronic transport and spin alignment in disordered magnetic systems. [Phys. Rev. B 90, 214429] Published Wed Dec 17, 2014
    Keywords: Magnetism
    Print ISSN: 1098-0121
    Electronic ISSN: 1095-3795
    Topics: Physics
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