Publication Date:
2014-09-09
Description:
The epitaxial Cr x Fe 3- x O 4 films were fabricated by dc reactive sputtering on MgO (001) substrates. The longitudinal resistivity ρ x x was enhanced 3 orders of magnitude with the increase of Cr content x from 0 to 0.87. The tunneling magnetoresistance like planar Hall effect in the Cr x Fe 3- x O 4 films was observed while the angle between ⟨100⟩ in (001) oriented films and the direction of magnetic field is 45° and 135°, respectively. Both the phase relation of angular dependent planar Hall resistivity ρ x y and the numeral relation of ρ x y with longitudinal resistivity difference ρ / / − ρ ⊥ cannot be understood by the planar Hall effect expression in isotropic magnetic medium. The largest planar Hall resistivity was ∼10 5 μ Ω cm for x = 0.71, which is one, two, and six orders of magnitude larger than that in Fe 3 O 4 , GaMnAs, and ferromagnetic metals, respectively. The giant planar Hall resistivity ρ x y is weak saturated at high fields and increases with the magnetic field. This giant planar Hall effect in the highly resistive Cr x Fe 3- x O 4 films is closely correlated to the longitudinal resistivity and antiphase boundaries.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
