Publication Date:
2013-06-11
Description:
Author(s): Marta De Luca, Giovanna Lavenuta, Antonio Polimeni, Silvia Rubini, Vincenzo Grillo, Francesco Mura, Antonio Miriametro, Mario Capizzi, and Faustino Martelli Photoluminescence (PL), micro-PL, and PL excitation (PLE) spectroscopy for different light polarizations have been used to investigate the electronic properties of GaAs characterized by a dominant wurtzite (WZ) phase that forms in bare GaAs and in InGaAs/GaAs heterostructure (HS) nanowires (NWs). In... [Phys. Rev. B 87, 235304] Published Mon Jun 10, 2013
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics