Publication Date:
2012-05-25
Description:
Author(s): A. Segura, V. Panchal, J. F. Sánchez-Royo, V. Marín-Borrás, V. Muñoz-Sanjosé, P. Rodríguez-Hernández, A. Muñoz, E. Pérez-González, F. J. Manjón, and J. González This paper reports an experimental and theoretical investigation on the electronic structure of bismuth selenide (Bi 2 Se 3 ) up to 9 GPa. The optical gap of Bi 2 Se 3 increases from 0.17 eV at ambient pressure to 0.45 eV at 8 GPa. The quenching of the Burstein-Moss effect in degenerate samples and the shi... [Phys. Rev. B 85, 195139] Published Thu May 24, 2012
Keywords:
Electronic structure and strongly correlated systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics