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Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET (1993)

Pang, S. W. ; Li, W. Q. ; Li, S. H. ; [et al.]

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Publication Date: 2019-07-13

Description: A 5 nm-thick SiO2 gate was grown on an Si(p+)/Si(0.8)Ge(0.2) modulation-doped heterostructure at 26 C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field above 12 MV/cm and fixed charge density about 3 x 10 exp 10/sq cm. Leakage current as low as 1/micro-A was obtained with the gate biased at 4 V. The MISFET with 0.25 x 25 sq m gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.

Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING

Type: Electronics Letters (ISSN 0013-5194); 29; 3; p. 277, 278.

Format: text

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