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Simulation of electron transport in quantum well devices (1992)

Miller, D. R. ; Gullapalli, K. K. ; Reddy, V. R. ; [et al.]

In: CASI

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Publication Date: 2013-08-31

Description: Double barrier resonant tunneling diodes (DBRTD) have received much attention as possible terahertz devices. Despite impressive experimental results, the specifics of the device physics (i.e., how the electrons propagate through the structure) are only qualitatively understood. Therefore, better transport models are warranted if this technology is to mature. In this paper, the Lattice Wigner function is used to explain the important transport issues associated with DBRTD device behavior.

Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING

Type: Michigan Univ., The Third International Symposium on Space Terahertz Technology: Symposium Proceedings; p 560-574

Format: application/pdf

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