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High-efficiency double-heterostructure AlGaAs/GaAs solar cells (1985)

Gale, R. P. ; Fan, John C. C. ; Chapman, R. L. ; [et al.]

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Publication Date: 2011-08-19

Description: Double-heterostructure solar cells have been fabricated from wafers prepared by using organometallic chemical vapor deposition to grow a p GaAs absorbing layer sandwiched between p(+) and n(+) AlGaAs layers. The best cell, which incorporates an abrupt AlGaAs/GaAs shallow heterojunction, exhibits a global AM1 one-sun conversion efficiency of 23 percent. The rate at which the open-circuit voltage decreases with increasing temperature is lower for the double-heterostructure cells than for GaAs shallow-homojunction cells.

Keywords: ENERGY PRODUCTION AND CONVERSION

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