Publication Date:
2019-07-12
Description:
Report describes experiments that used reflection high-energy-electron diffraction (RHEED) to investigate behavior of GaAs surfaces during and after growth by molecular-beam epitaxy (MBE). Experimental results show dynamic RHEED measurements useful both as probes of surface and growth kinetics and as methods for determining and reproducing surface and growth conditions.
Keywords:
PHYSICAL SCIENCES
Type:
NPO-16755
,
NASA Tech Briefs (ISSN 0145-319X); 10; 3; P. 59
Format:
text