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Monolithic silicon bolometers (1984)

Meyer, S. S. ; Donnelly, J. P. ; Jeffries, A. D. ; [et al.]

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Publication Date: 2011-08-18

Description: A new type of bolometer detector for the millimeter and submillimeter spectral range is described. The bolometer is constructed of silicon using integrated circuit fabrication techniques. Ion implantation is used to give controlled resistance vs temperature properties as well as extremely low 1/f noise contacts. The devices have been tested between 4.2 and 0.3 K. The best electrical NEP measured is 4 x 10 to the -16th W/Hz to the 1/2 at 0.35 K between 1- and 10-Hz modulation frequency. This device had a detecting area of 0.25 sq cm and a time constant of 20 msec at a bath temperature of 0.35 K.

Keywords: INSTRUMENTATION AND PHOTOGRAPHY

Type: Applied Optics (ISSN 0003-6935); 23; 910-914

Format: text

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