ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Chemical mechanical polishing (CMP) has been extensively used in the integrate circuit(IC) manufacturing industry as a widely accepted global planarization technology, accurate in situendpoint detection of CMP process can reduce the product variance, significantly improve yield andthroughput. A CMP in situ endpoint detection system, which measured the friction and downforceduring CMP process using a specially designed three-axis strain gauge force sensor, was developed.The frictional transition from copper (Cu) to tantalum (Ta) barrier as well as Ta barrier to silicondioxide (SiO2) dielectric was detected during CMP process. The experimental results showed thatthe change of friction could be detected when the polished material changed. The developed CMP insitu endpoint detection system is feasible for 300 mm and 450 mm copper CMP process
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/41/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.53-54.125.pdf
