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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 31 (Nov. 2007), p. 80-82 
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Hydrogenated nanocrystalline silicon (nc-Si:H) films produced by layer-by-layer (LBL)deposition technique were studied. The films were grown at different hydrogen to silane flow-rateratio on crystal silicon (111) substrate. The properties of films were investigated by X-raydiffraction (XRD), micro-Raman scattering spectroscopy, Fourier transform infrared (FTIR)spectroscopy, optical transmission spectroscopy, atomic force microscopy (AFM) and fieldemission scanning electron microscopy (FESEM). These properties showed dependence on thehydrogen dilution of silane. Appearance of XRD peaks at diffraction angles of 28.4 o and 56.1 owhich correspond to silicon orientation of (111) and (311) respectively, were observed in all filmsindicating evidence of crystallinity in the films. Raman scattering results indicated that crystallinityin the films was due to the presence of nanocrystallites embedded in an amorphous matrix. Theenergy gap of the films showed dependence on the hydrogen content in the films. Increase innanocrystallite size resulted in increase in disorder at low hydrogen dilution films but films remainhomogenous with increase in nanocrystallite size for the high hydrogen dilution films
    Type of Medium: Electronic Resource
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