ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The knowledge and control of the structural and morphological properties ofnanocrystalline silicon is a fundamental requisite for its proper application in photovoltaics. To thispurpose, nanocrystalline silicon films grown by Low Energy Plasma Enhanced Chemical VapourDeposition (LEPECVD) technique on different kinds of substrates were submitted to a systematiccharacterization using Raman spectroscopy, X-ray diffraction (XRD) and high-resolutiontransmission electron microscopy (HRTEM). The results showed that the nature of the filmsubstrate induces deep changes in the structural properties of the deposited films. The importance ofa Raman in–depth analysis for an accurate determination of the sample structure has been alsodemonstrated
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.33.pdf